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FREQUENCY DEPENDENCE OF C AND DELTA V/DELTA (C-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIESZOHTA Y.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1029-1035; BIBL. 17 REF.Serial Issue

TRANSIENT RADIATION EFFECTS IN GAAS IMPATT DIODESGREILING PT; CLARK J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 753-754; BIBL. 9 REF.Serial Issue

TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

AUGMENTATION DE LA HAUTEUR DE BARRIERE DE DIODES DE SCHOTTKY AU SILICIUM: APPLICATION AUX CELLULES SOLAIRES.PONPON JP; SIFFERT P.1975; J. PHYS.; FR.; DA. 1975; VOL. 36; NO 5 SUPPL.; PP. 149-151; ABS. ANGL.; BIBL. 9 REF.Article

APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

AN ION-IMPLANTED SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORMOLINE RA; GIBSON WC; HECK LD et al.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 317-320; BIBL. 9 REF.Serial Issue

SCHOTTKY BARRIERS ON ZNTEBAKER WD; MILNES AG.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5152-5153; BIBL. 8 REF.Serial Issue

BEHAVIOR OF AL-SI SCHOTTKY BARRIER DIODES UNDER HEAT TREATMENTCHINO K.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 119-121; H.T. 1; BIBL. 4 REF.Serial Issue

SHALLOW PTSI-SI SCHOTTKY BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUETSAUR BY; SILVERSMITH DJ; MOUNTAIN RW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5243-5246; BIBL. 8 REF.Article

DIODES SCHOTTKY DE PUISSANCE: CARACTERISATION DU BRUIT DE FOND DE LA BARRIERE.SAVELLI M; LECOY G; ROLLAND M et al.1975; DGRST-7371358; FR.; DA. 1975; PP. (40P.); BIBL. 1 P.; (RAPP. FINAL, ACTION CONCERTEE: COMITE COMPOSANTS CIRCUITS MICRONIATURISES)Report

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

PHOTOACOUSTIC DETERMINATION OF THE INTERNAL QUANTUM EFFICIENCY OF SCHOTTKY DIODESTHIELEMANN W; NEUMANN H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. K123-K126; BIBL. 5 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

SCHOTTKY CONTACT FABRICATION FOR GAAS MESFET'SMIERS TH.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1795-1799; BIBL. 26 REF.Article

SCHOTTKY BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED COPOLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITSKOEZUKA H; ETOH S.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2511-2516; BIBL. 22 REF.Article

PIEZOELECTRIC EFFECT IN AU-CDS SCHOTTKY BARRIER.KUSAKA M; KANAKURA M; OKAZAKI S et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 793-796; BIBL. 7 REF.Article

GENERALISED THERMIONIC-EMISSION THEORY OF CARRIER TRANSPORT THROUGH THIN BASE OF BIPOLAR TRANSISTORPOPOVIC RS.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 111-115; BIBL. 13 REF.Article

NOVEL LOW-LOSS AND HIGH-SPEED DIODE UTILIZING AN "IDEAL" OHMIC CONTACTAMEMIYA Y; SUGETA T; MIZUSHIMA Y et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 29; NO 2; PP. 236-243; BIBL. 11 REF.Article

CONTACTLESS MEASUREMENT OF SCHOTTKY BARRIER HEIGHTS USING SECONDARY ELECTRONSHUANG HCW; HO PS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 482-484; BIBL. 10 REF.Article

DETECTEURS A BARRIERE DE SURFACE EN AU-SI A SENSIBILITE AMELIOREE DANS L'ULTRAVIOLET PROCHEGATSENKO LS; GOLOUNER TM; GROSHKOVA GN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 272-273; BIBL. 6 REF.Article

OUTMIGRATION OF GALLIUM FROM AU-GAAS INTERFACES.MADAMS CJ; MORGAN DV; HOWES MJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 24; PP. 574-575; BIBL. 6 REF.Article

MECANISME DE LA SENSIBILITE AUX CONTRAINTES DE DIODES A BARRIERES DE SCHOTTKY EN ARSENIURE DE GALLIUMVYATKIN AP; MAKSIMOVA NK; FILONOV NG et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 7; PP. 1384-1387; BIBL. 15 REF.Article

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

A MODEL FOR SCHOTTKY-BARRIER SOLAR CELL ANALYSIS.MCOUAT RF; PULFREY DL.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 2113-2119; BIBL. 16 REF.Article

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