UNIPHASE BURIED-CHANNEL CHARGE-COUPLED DEVICESBARSAN RM.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 2; PP. 167-171; BIBL. 6 REF.Article

FREE CHARGE PROPAGATION IN A RESISTIVE-GATE MOS TRANSMISSION LINEBARSAN RM.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 9; PP. 1109-1119; BIBL. 13 REF.Article

SIGNAL TRANSFER AND DEGRADATION IN SURFACE-CHANNEL CHARGE-COUPLED DEVICES.BARSAN RM.1977; PROC. INSTIT. ELECTR. ENGRS; G.B.; DA. 1977; VOL. 124; NO 2; PP. 103-108; BIBL. 25 REF.Article

TRANSIENT ANALYSIS OF THE GATE POTENTIAL FOR A RESISTIVE-GATE MOS STRUCTURE IN DEEP DEPLETIONS.BARSAN RM.1977; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 9; PP. 959-974; ABS. FR.; BIBL. 10 REF.Article

DISPOSITIFS A TRANSFERT DE CHARGE A CANAL EN SURFACEBARSAN RM.1977; STUD. CERC. FIZ.; ROMAN.; DA. 1977; VOL. 29; NO 2; PP. 159-182; ABS. ANGL.; BIBL. 12 REF.Article

DISTRIBUTED MODEL ANALYSIS OF CHARGE-COUPLED AND BUCKET-BRIGADE DEVICES.BARSAN RM.1976; PROC. INSTIT. ELECTR. ENGRS; G.B.; DA. 1976; VOL. 123; NO 6; PP. 505-508; BIBL. 10 REF.Article

DISTRIBUTED MODEL ANALYSIS OF CHARGE-TRANSFER DEVICES.BARSAN RM.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 3; PP. 239-251; ABS. FR.; BIBL. 22 REF.Article

ANALYSIS AND MODELING OF DUAL-GATE MOSFET'SBARSAN RM.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 5; PP. 523-534; BIBL. 19 REF.Article

CHARACTERISTICS OF THE OVERLAID CHARGE-COUPLED DEVICEBARSAN RM.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 2; PP. 123-134; BIBL. 18 REF.Article

STEP AND FREQUENCY RESPONSES OF C.T.D.S. WITH NONUNIFORM TRANSFER INEFFICIENCYBARSAN RM.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 13; PP. 389-391; BIBL. 10 REF.Article

CHARGE TRANSFER IN CHARGE-COUPLED DEVICES IN THE PRESENCE OF INTERFACE STATES.BARSAN RM.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 12; PP. 1015-1019; BIBL. 12 REF.Article

FRINGING FIELDS AND INTERFACE STATES EFFECTS ON INCOMPLETE CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.BARSAN RM.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 8; PP. 815-828; ABS. FR.; BIBL. 9 REF.Article

COMPUTER SIMULATION AND DISTRIBUTED MODEL ANALYSIS OF THE FREE CHARGE TRANSPORT IN AN MOS TRANSMISSION LINEBARSAN RM.1978; REV. ROUMAINE PHYS.; ROM; DA. 1978; VOL. 23; NO 4; PP. 333-351; ABS. FR.; BIBL. 10 REF.Article

CHARGE TRANSFER AND SIGNAL DEGRADATION IN THE PRESENCE OF INTERFACE TRAPS IN CHARGE-COUPLED SHIFT REGISTERS.BARSAN RM.1977; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 1; PP. 57-71; ABS. FR.; BIBL. 24 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH POSITION-DEPENDENT SMALL-SIGNAL TRANSFER INEFFICIENCYBARSAN RM.1980; INTERNATION. J. ELECTRON.; GBR; DA. 1980; VOL. 48; NO 2; PP. 149-164; BIBL. 27 REF.Article

DUAL-GATE MOS TRANSISTORS: PHYSICAL MODELSBARSAN RM.1980; REV. ROUM. PHYS.; ISSN 0035-4090; ROM; DA. 1980; VOL. 25; NO 10; PP. 1125-1136; ABS. FRE; BIBL. 19 REF.Article

CHARACTERIZATION OF CHARGE-TRANSFER DEVICES WITH VARIABLE TRANSFER INEFFICIENCYBARSAN RM.1979; REV. ROUMAINE PHYS.; ROM; DA. 1979; VOL. 24; NO 5; PP. 471-485; ABS. FRE; BIBL. 32 REF.Article

THEORETICAL INVESTIGATION OF THE OPERATIONAL CHARACTERISTICS OF THE OVERLAID CHARGE-COUPLED DEVICEBARSAN RM.1979; REV. ROUMAINE PHYS.; ROM; DA. 1979; VOL. 24; NO 6; PP. 567-589; ABS. FRE; BIBL. 19 REF.Article

GREEN'S FUNCTION CALCULATION OF ELECTRIC FIELDS IN SURFACE-CHANNEL CHARGE-COUPLED DEVICESBARSAN RM.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 2; PP. 177-191; BIBL. 18 REF.Article

NONOVERLAPPING DUAL-GATE BUCKET-BRIGADE DEVICESBARSAN RM; DELIBALTOV A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 329-331; BIBL. 5 REF.Article