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THE TRANSPACITOR, A NOVEL THREE-TERMINAL MOS-CAPACITOR SWITCHINGBARTELINK DJ.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 198-200; BIBL. 5 REF.Article

SURFACE DEPLETION AND INVERSION IN SEMICONDUCTORS WITH ARBITRARY DOPANT PROFILESBARTELINK DJ.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 220-923; BIBL. 9 REF.Article

MAGNETIC SENSITIVITY OF A DISTRIBUTED SI PLANAR PNPN STRUCTURE SUPPORTING A CONTROLLED CURRENT FILAMENT.BARTELINK DJ; PERSKY G.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 590-592; BIBL. 4 REF.Article

HIGH-RESOLUTION SCANNING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICONRATNAKUMAR KN; PEASE RFW; BARTELINK DJ et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 463-466; BIBL. 7 REF.Article

CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORSJOHNSON NM; BARTELINK DJ; GOLD RB et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4828-4833; BIBL. 23 REF.Article

MOS MEASUREMENT OF OXYGEN RECOILS FROM AS IMPLANTATION INTO SILICON DIOXIDE.GOETZBERGER A; BARTELINK DJ; MCVITTIE JP et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 4; PP. 259-261; BIBL. 9 REF.Article

LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES: MULTILAYER STRUCTURESBIEGELSEN DK; JOHNSON NM; BARTELINK DJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 150-152; BIBL. 6 REF.Article

DEEP LEVELS IN SCANNED ELECTRON-BEAM ANNEALED SILICONJOHNSON NM; REGOLINI JL; BARTELINK DJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 425-428; BIBL. 14 REF.Article

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