kw.\*:("BASE TRANSISTOR")
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SYNTHESIS OF BASE IMPURITY DISTRIBUTIONS FOR IMPROVED FIGURE OF MERIT OF TRANSISTORS.MAHESHWARI LK; RAMANAN KV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 307-312; BIBL. 6 REF.Article
BUILT-IN ELECTRIC FIELD DUE TO ARBITRARY BASE IMPURITY DISTRIBUTIONS IN JUNCTION TRANSISTORS.MAHESHWARI LK; RAMANAN KV.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 1-4; BIBL. 6 REF.Article
ANALYSIS OF A BASE-CURRENT COMPENSATION TECHNIQUE.DEL CORSO D; POZZOLO V.1974; ALTA FREQ.; ITAL.; DA. 1974; VOL. 43; NO 12; PP. 1018-1022; BIBL. 21 REF.Article
EXPLANATION OF ANOMALOUS BASE REGIONS IN TRANSISTORSFAIR RB.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 4; PP. 186-187; BIBL. 3 REF.Serial Issue
BASISANSTEUERUNG VON HOCHVOLTTRANSISTOREN. = LE CONTROLE PAR LA BASE DES TRANSISTORS A HAUTE TENSIONRISCHMULLER K.1977; ELEKTRONIK; DTSCH.; DA. 1977; VOL. 26; NO 11; PP. 55-58; BIBL. 3 REF.Article
EN ANGLAIS = THE FT OF BIPOLAR TRANSISTORS WITH THIN LIGHTLY DOPED BASESBEALE JRA; SLATTER JAG.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 549-556; BIBL. 18 REF.Article
MODIFICATIONS OF EQUIVALENT CIRCUITS FOR NARROW-BASE TRANSISTORS.ROHR P; LINDHOLM FA.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 65-72; BIBL. 19 REF.Article
MESURE DE LA VALEUR DU CHAMP INTERNE DANS LA REGION DE BASE D'UNE DIODE PLANETOGATOV VV.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 4; PP. 231-232; BIBL. 5 REF.Article
THE DIFFUSION OF HOT ELECTRONS ACROSS A SEMICONDUCTOR BASERIDLEY BK.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 24; NO 2; PP. 147-154; BIBL. 32 REF.Article
BASE WIDENING INTO THE EMITTER REGION OF AN N+NPN BIPOLAR TRANSISTOR.REY G; BAILBE JP; MARTY A et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 545-550; BIBL. 3 REF.Article
MODELING THE BASE RESISTANCE OF A BIPOLAR JUNCTION TRANSISTORJAIN LC; GARUD GN.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 11; PP. 450-452; ABS. GER; BIBL. 11 REF.Article
COMPARISON OF NOISE-MEASURED AND THEORETICAL VALUE OF BASE SPREADING RESISTANCE FOR AN INTERDIGITATED TRANSISTOR.KNOTT KF; UNWIN RT.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 7; PP. 147-148; BIBL. 6 REF.Article
HIGH SPEED TRANSISTOR WITH DOUBLE BASE DIFFUSION.MAGDO S; MAGDO I.1975; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1975; VOL. 19; NO 2; PP. 146-150; BIBL. 10 REF.Article
BASE RESISTANCE MEASUREMENTS ON BIPOLAR JUNCTION TRANSISTORS VIA LOW TEMPERATURE BRIDGE TECHNIQUES.WADE TE; VAN DER ZIEL A; CHENETTE ER et al.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 385-388; BIBL. 12 REF.Article
LA COMMANDE DE BASE DES TRANSISTORS HAUTE TENSIONRISCHMUELLER K.1979; ELECTRONIQUE; CHE; DA. 1979; NO 5-6; PP. EL1-EL5Article
A COMPANION MODEL FOR BIPOLAR-TRANSISTOR BASE RESISTANCE.WEIL PB; MCNAMEE LP.1977; I.E.E.E. TRANS. CIRCUITS SYST.; U.S.A.; DA. 1977; VOL. 24; NO 10; PP. 541-545; BIBL. 12 REF.Article
Selective epitaxy base transistor (SEBT)BURGHARTZ, J. N; GINSBERG, B. J; MADER, S. R et al.IEEE electron device letters. 1988, Vol 9, Num 5, pp 259-261, issn 0741-3106Article
TIRISTORI PLANARI RAPIDI PER IL COMANDO DI BASE DI TRANSISTORI DI POTENZA = THYRISTORS PLANAIRES RAPIDES POUR LA COMMANDE DE LA BASE DE TRANSISTORS DE PUISSANCEBARRET J.1980; ANTENNA; ITA; DA. 1980; VOL. 52; NO 11; PP. 417-418Article
LA COMMANDE DE BASE DES TRANSISTORS HAUTE TENSIONRISCHMUELLER K.1979; ELECTRONIQUE; CHE; DA. 1979; NO 4; PP. EL1-EL8Article
LES TRANSISTORS DE PUISSANCE EN COMMUTATION: OPTIMISATION DE LA COMMANDE DE BASEMOURIER G.1979; TOUTE ELECTRON.; FRA; DA. 1979; NO 442; PP. 65-67Article
A THIN FILM METAL BASE TRANSISTOR STRUCTURE WITH AMORPHOUS SILICONDENEUVILLE A; BRODSKY MH.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 55; NO 1; PP. 137-141; BIBL. 10 REF.Article
CURRENT AND BASE TRANSIT-TIME RELATIONS IN NORMAL AND INVERTED (IIL) BIPOLAR TRANSISTORS.ELSAID MH; ROULSTON DJ; WATT LAK et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 761-763; BIBL. 3 REF.Article
EFFECTS OF VARYING BASE AND COLLECTOR DOPING ON HIGH CURRENT BEHAVIOUR IN BIPOLAR EPITAXIAL TRANSISTORS.THOMAS RE; SAYEED KH.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 2; PP. 121-140; BIBL. 18 REF.Article
APPLICATION OF DIFFUSION FROM IMPLANTED POLYCRYSTALLINE SILICON TO BIPOLAR TRANSISTORS.AKASAKA Y; TSUKAMOTO K; KAWAGUCHI M et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 49-54; BIBL. 9 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO)Conference Paper
CHARACTERIZATION AND MEASUREMENT OF THE BASE AND EMITTER RESISTANCES OF BIPOLAR TRANSISTORSSANSEN WMC; MEYER RG.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 6; PP. 492-498; BIBL. 23 REF.Serial Issue
