Sino-Tibetan Tongue and LickBAUER, R. S.Linguistics of the Tibeto-Burman Area. 1988, Vol 11, Num 2, pp 144-165Article

Written Cantonese of Hong KongBAUER, R. S.Cahiers de linguistique Asie orientale. 1988, Vol 17, Num 2, pp 245-293, issn 0153-3320Article

Epoxy resinsBAUER, R. S.A.C.S. symposium series. 1985, Num 285, pp 931-961, issn 0097-6156Article

The Hong Kong Cantonese Speech CommunityBAUER, R. S.Cahiers de Linguistique. Asie Orientale Paris. 1984, Vol 13, Num 1, pp 57-90Article

Proceedings/15th annual conference on the physics and chemistry of semiconductor interfaces, 1-4 February 1988, Asilomar, CA, USABAUER, R. S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 4, pp 1117-1487, issn 0734-211XConference Proceedings

Surfaces and interfaces: physics and electronics. Proceedings of the second Trieste ICTP-IUPAP semiconductor symposium, International Centre for theoretical Physics, Trieste, Italy, 30 August-3 September 1982BAUER, R. S.Surface science. 1983, Vol 132, Num 1-3, issn 0039-6028, XV-644 pConference Proceedings

Standardization of creatine kinase-MB (CK-MB) mass assays : The use of recombinant CK-MB as a reference materialCHRISTENSON, R. H; VAIDYA, H; AZZAZY, H. M. E et al.Clinical chemistry (Baltimore, Md.). 1999, Vol 45, Num 9, pp 1414-1423, issn 0009-9147Conference Paper

Proceedings/13th annual conference on the physics and chemistry of semiconductor interfaces, 28-30 January 1986, Pasadena, CABAUER, R. S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1986, Vol 4, Num 4, pp 857-1139, issn 0734-211XConference Proceedings

Proceedings/11th. Annual conference on the physics and chemistry of semiconductor interfaces, Pinehurst, NC, 31 January-2 February 1984BAUER, R. S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 3, pp 333-604, issn 0734-211XConference Proceedings

Cross-linked polymers: chemistry, properties, and applications/193rd Meeting of the American Chemical Society, Denver CO, April 5-10, 1987DICKIE, R. A; LABANA, S. S; BAUER, R. S et al.A.C.S. symposium series. 1988, Num 367, issn 0097-6156, IX-492 pConference Proceedings

Effect of an Al interlayer on the GaAs/Ge(100) heterojunction formationKATNANI, A. D; CHIARADIA, P; CHO, Y et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 4071-4076, issn 0163-1829Article

Independence of Fermi-Level position and valence-band edge discontinuity at GaAs-Ge(100) interfacesCHIARADIA, P; KATNANI, A. D; SANG, H. W. JR et al.Physical review letters. 1984, Vol 52, Num 14, pp 1246-1249, issn 0031-9007Article

Novel processing and cure of epoxy resin systemsBREITIGAM, W. V; BAUER, R. S; MAY, C et al.Polymer (Guildford). 1993, Vol 34, Num 4, pp 767-771, issn 0032-3861Conference Paper

Zur Nosologie der Osteochondrosis dissecans der Talusrolle = Nosologie de l'ostéochondrite dissécante de la trochlée astragalienne = On the nosology of osteochondrosis dissecans of the trochlea of the talusBAUER, R. S; OCHSNER, P. E.Zeitschrift für Orthopädie und ihre Grenzgebiete. 1987, Vol 125, Num 2, pp 194-200, issn 0044-3220Article

Irrelevance of interface defects to heterojunction band offsetsKATNANI, A. D; CHIARADIA, P; SANG, H. W. JR et al.Journal of electronic materials. 1985, Vol 14, Num 1, pp 25-32, issn 0361-5235Article

Photoemission study of GeAs (201): a model for the As-stabilized Ge surface on GaAs/Ge heterojunctionsSTUCKI, F; LAPEYRE, G. J; BAUER, R. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1983, Vol 1, Num 4, pp 865-870, issn 0734-211XArticle