DEVELOPMENT OF DEPRESSIONS AND VOIDS DURING LPE GROWTH OF GAAS.BAUSER E.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 15; NO 3; PP. 243-252; BIBL. 19 REF.Article

STEPS ON FACETS OF SOLUTION GROWN GAAS EPITAXIAL LAYERSBAUSER E; LOCHNER KS.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 457-464; BIBL. 41 REF.Article

X-RAY TOPOGRAPHY OF GROWTH STEP SOURCES IN LPE GALLIUM ARSENIDEBAUSER E; HAGEN W.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 771-773; BIBL. 11 REF.Article

A LATERAL MICROSCOPIC GROWTH MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL GROWTHBAUSER E; ROZGONYI GA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1001-1003; BIBL. 17 REF.Article

LPE OF GAAS AND RELATED COMPOUNDS: SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGYBAUSER E; BENZ KW.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 1; PP. 10-14; BIBL. 25 REF.Article

LOW TEMPERATURE LIQUID PHASE EPITAXY OF SILICONLINNEBACH R; BAUSER E.1982; J. CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 1; PP. 43-47; BIBL. 11 REF.Article

ANALYSIS OF DISLOCATIONS CREATING MONOMOLECULAR GROWTH STEPSBAUSER E; STRUNK H.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 362-366; BIBL. 21 REF.Article

GROWTH OF BINARY III-V SEMICONDUCTORS FROM METALLIC SOLUTIONSBENZ KW; BAUSER E.1980; CRYSTALS; DEU; DA. 1980; VOL. 3; PP. 1-48; BIBL. 149 REF.Article

PROFILING OF DEEP IMPURITIES BY PERSISTENT PHOTOCURRENT MEASUREMENTSTHEODOROU DE; QUEISSER HJ; BAUSER E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 628-629; BIBL. 5 REF.Article

LOW-DENSITY DISLOCATION ARRAYS AT HETEROEPITAXIAL GE/GAAS-INTERFACES INVESTIGATED BY HIGH VOLTAGE ELECTRON MICROSCOPYSTRUNK H; HAGEN W; BAUSER E et al.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 18; NO 1; PP. 67-75; BIBL. 19 REF.Article

RAMAN SPECTROSCOPY - A VERSATILE TOOL FOR CHARACTERIZATION OF THIN FILMS AND HETEROSTRUCTURES OF GAAS AND AL_XGA_1-XASABSTREITER G; BAUSER E; FISCHER A et al.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 4; PP. 345-352; BIBL. 22 REF.Article

Bethge and frank step sources in solution growth of GaAsSTRUNK, H. P; BAUSER, E.Physica status solidi. A. Applied research. 1995, Vol 147, Num 2, pp 301-312, issn 0031-8965Article

NF₃ plasma generation by commercial 50 Hz alternating current discharge for dry etchingKONUMA, M; BAUSER, E.Applied physics letters. 1992, Vol 61, Num 18, pp 2159-2161, issn 0003-6951Article

Microscopic growth mechanisms od semiconductors: experiments and modelsBAUSER, E; STRUNK, H. P.Journal of crystal growth. 1984, Vol 69, Num 2-3, pp 561-580, issn 0022-0248Article

LASER GROWN SINGLE CRYSTALS OF SILICONBAUERLE D; LEYENDECKER G; WAGNER D et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 30; NO 3; PP. 147-149; BIBL. 10 REF.Article

EXPERIMENTAL DETERMINATION OF THE ANISOTROPY OF THE EXITON WAVE FUNCTION OF GAAS IN MAGNETIC FIELD.FISCHBACH JU; RUHLE W; BIMBERG D et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1255-1258; BIBL. 15 REF.Article

Mass and energy analysis of gaseous species in NF₃ plasma during silicon reactive ion etchingKONUMA, M; BAUSER, E.Journal of applied physics. 1993, Vol 74, Num 1, pp 62-67, issn 0021-8979Article

Microstep structures on prismatic faces of vapour grown NbSe₄I_0.33 crystalsNAKADA, I; BAUSER, E.Journal of crystal growth. 1989, Vol 96, Num 2, pp 234-242, issn 0022-0248Article

Water vapor controlling selective reactive ion etching of SiO₂/Si in NF₃ plasmaKONUMA, M; BAUSER, E.Journal of applied physics. 1993, Vol 74, Num 3, pp 1575-1578, issn 0021-8979Article

Growth of Si_1-xGe_x on silicon by liquid-phase epitaxyALONSO, M. I; BAUSER, E.Journal of applied physics. 1987, Vol 62, Num 11, pp 4445-4449, issn 0021-8979Article

DOPANT TRACING OF TERRACE GROWTH IN GAAS LPE LAYERS.FISCHER B; BAUSER E; SULLIVAN PA et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 78-80; BIBL. 11 REF.Article

SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID PHASE EPITAXIAL LAYERS.BAUSER E; FRIK M; LOECHNER KS et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 148-153; BIBL. 19 REF.Article

Nature of dislocations promoting growth in liquid phase epitaxy of gallium arsenideMÖHLING, W; WEISHART, H; BAUSER, E et al.Journal of crystal growth. 1993, Vol 130, Num 3-4, pp 466-474, issn 0022-0248Article

Two-dimensional growth of strained Ge_0.85Si_0.15 on Si(111) by liquid phase epitaxyHANSSON, P. O; ERNST, F; BAUSER, E et al.Journal of applied physics. 1992, Vol 72, Num 5, pp 2083-2085, issn 0021-8979Article

Dislocation generation in silicon grown laterally over SiO₂ by liquid phase epitaxyBANHART, F; BERGMANN, R; PHILLIPP, F et al.Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 4, pp 317-323, issn 0721-7250Article