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DEVELOPMENT OF DEPRESSIONS AND VOIDS DURING LPE GROWTH OF GAAS.BAUSER E.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 15; NO 3; PP. 243-252; BIBL. 19 REF.Article

STEPS ON FACETS OF SOLUTION GROWN GAAS EPITAXIAL LAYERSBAUSER E; LOCHNER KS.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 457-464; BIBL. 41 REF.Article

X-RAY TOPOGRAPHY OF GROWTH STEP SOURCES IN LPE GALLIUM ARSENIDEBAUSER E; HAGEN W.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 771-773; BIBL. 11 REF.Article

A LATERAL MICROSCOPIC GROWTH MODEL FOR HETEROGENEOUS IMPURITY INCORPORATION DURING CZOCHRALSKI CRYSTAL GROWTHBAUSER E; ROZGONYI GA.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1001-1003; BIBL. 17 REF.Article

LPE OF GAAS AND RELATED COMPOUNDS: SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGYBAUSER E; BENZ KW.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 1; PP. 10-14; BIBL. 25 REF.Article

THE FEATHERING OF DOPING STRIATIONS IN SEMICONDUCTOR CRYSTALSBAUSER E; ROZGONYI GA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1782-1785; BIBL. 17 REF.Article

LOW TEMPERATURE LIQUID PHASE EPITAXY OF SILICONLINNEBACH R; BAUSER E.1982; J. CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 1; PP. 43-47; BIBL. 11 REF.Article

ANALYSIS OF DISLOCATIONS CREATING MONOMOLECULAR GROWTH STEPSBAUSER E; STRUNK H.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 2; PP. 362-366; BIBL. 21 REF.Article

GROWTH OF BINARY III-V SEMICONDUCTORS FROM METALLIC SOLUTIONSBENZ KW; BAUSER E.1980; CRYSTALS; DEU; DA. 1980; VOL. 3; PP. 1-48; BIBL. 149 REF.Article

PROFILING OF DEEP IMPURITIES BY PERSISTENT PHOTOCURRENT MEASUREMENTSTHEODOROU DE; QUEISSER HJ; BAUSER E et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 628-629; BIBL. 5 REF.Article

LOW-DENSITY DISLOCATION ARRAYS AT HETEROEPITAXIAL GE/GAAS-INTERFACES INVESTIGATED BY HIGH VOLTAGE ELECTRON MICROSCOPYSTRUNK H; HAGEN W; BAUSER E et al.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 18; NO 1; PP. 67-75; BIBL. 19 REF.Article

LIQUID PHASE EPITAXY APPARATUS FOR MULTIPLE LAYERS UTILIZING CENTRIFUGAL FORCES.BAUSER E; SCHMIDT L; LOECHNER KS et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 457-460; BIBL. 7 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

RAMAN SPECTROSCOPY - A VERSATILE TOOL FOR CHARACTERIZATION OF THIN FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XASABSTREITER G; BAUSER E; FISCHER A et al.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 4; PP. 345-352; BIBL. 22 REF.Article

Bethge and frank step sources in solution growth of GaAsSTRUNK, H. P; BAUSER, E.Physica status solidi. A. Applied research. 1995, Vol 147, Num 2, pp 301-312, issn 0031-8965Article

NF3 plasma generation by commercial 50 Hz alternating current discharge for dry etchingKONUMA, M; BAUSER, E.Applied physics letters. 1992, Vol 61, Num 18, pp 2159-2161, issn 0003-6951Article

Microscopic growth mechanisms od semiconductors: experiments and modelsBAUSER, E; STRUNK, H. P.Journal of crystal growth. 1984, Vol 69, Num 2-3, pp 561-580, issn 0022-0248Article

LASER GROWN SINGLE CRYSTALS OF SILICONBAUERLE D; LEYENDECKER G; WAGNER D et al.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 30; NO 3; PP. 147-149; BIBL. 10 REF.Article

EXPERIMENTAL DETERMINATION OF THE ANISOTROPY OF THE EXITON WAVE FUNCTION OF GAAS IN MAGNETIC FIELD.FISCHBACH JU; RUHLE W; BIMBERG D et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1255-1258; BIBL. 15 REF.Article

Mass and energy analysis of gaseous species in NF3 plasma during silicon reactive ion etchingKONUMA, M; BAUSER, E.Journal of applied physics. 1993, Vol 74, Num 1, pp 62-67, issn 0021-8979Article

Microstep structures on prismatic faces of vapour grown NbSe4I0.33 crystalsNAKADA, I; BAUSER, E.Journal of crystal growth. 1989, Vol 96, Num 2, pp 234-242, issn 0022-0248Article

Origin of multiple steps in vapour growth of NbSe4I0.33NAKADA, I; BAUSER, E.Journal of crystal growth. 1989, Vol 96, Num 2, pp 243-257, issn 0022-0248Article

Valley traces in semiconductor crystalsLU, Y. C; BAUSER, E.Journal of crystal growth. 1985, Vol 71, Num 2, pp 305-316, issn 0022-0248Article

A DENSE ELECTRON-HOLE-LIQUID IN GA0.08AL0.92ASBIMBERG D; BLUDAU W; LINNEBACH R et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 12; PP. 987-991; BIBL. 14 REF.Article

Water vapor controlling selective reactive ion etching of SiO2/Si in NF3 plasmaKONUMA, M; BAUSER, E.Journal of applied physics. 1993, Vol 74, Num 3, pp 1575-1578, issn 0021-8979Article

Growth of Si1-xGex on silicon by liquid-phase epitaxyALONSO, M. I; BAUSER, E.Journal of applied physics. 1987, Vol 62, Num 11, pp 4445-4449, issn 0021-8979Article

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