ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR DETECTORSBENEKING H.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1431-1441; BIBL. 26 REF.Article

FULL SOLID STATE IMAGE CONVERTER BASED ON INTEGRATION OF PHOTOTRANSISTORS AND LED_SBENEKING H.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 4; PP. 99-100; BIBL. 13 REF.Article

DIE BARKHAUSEN-BEZIEHUNG IM LICHTE MODERNER HALBLEITER-BAUELEMENTE = RELATION DE BARKHAUSEN ET SON APPLICATION A DES DISPOSITIFS SEMICONDUCTEURS MODERNESBENEKING H.1983; FREQUENZ; ISSN 0016-1136; DEU; DA. 1983; VOL. 37; NO 1; PP. 2-6; ABS. ENG; BIBL. 7 REF.Article

III-V Technology: the key for advanced devicesBENEKING, H.Journal of the Electrochemical Society. 1989, Vol 136, Num 9, pp 2680-2686, issn 0013-4651, 7 p.Article

DOUBLE HETEROJUNCTION NPNGAALAS/GAAS BIPOLAR TRANSISTORBENEKING H; SU LM.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 25-26; BIBL. 2 REF.Article

GROSSSIGNAL-SCHALTVERHALTEN VON BIPOLARTRANSISTOREN BEI KLEINEN VERSORGUNGSSPANNUNGEN (UEBER-SPEICHER-EFFEKT) = COMPORTEMENT DE TRANSISTORS BIPOLAIRES EN COMMUTATION ET EN REGIME DE SIGNAUX FORTS AUX FAIBLES TENSIONS D'ALIMENTATION (EFFET DE RETENTION EXCESSIVE DE CHARGES)FILENSKY W; BENEKING H.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 10; PP. 397-402; ABS. ENG; BIBL. 8 REF.Article

AVALANCHE NOISE IN GAAS M.E.S.F.E.T.S.TSIRONIS C; BENEKING H.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 15; PP. 438-439; BIBL. 5 REF.Article

ELECTROLUMINESCENT GA AS-GA_XAL_1-XAS HETEROSTRUCTURE DIODES WITH NEGATIVE RESISTANCE AT LOW TEMPERATURES.BENEKING H; GATTUNG A.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 2; PP. 37-38; BIBL. 8 REF.Article

ULTRAFAST THIN FILM GAAS PHOTOCONDUCTIVE DETECTORSKLEIN HJ; BIMBERG D; BENEKING H et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 92; NO 3; PP. 273-279; BIBL. 9 REF.Article

HIGH-SPEED GA_0.47IN_0.53AS PHOTOCONDUCTIVE DETECTOR FOR PICOSECOND LIGHT PULSESKLEIN HJ; KAUMANNS R; BENEKING H et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 421-422; BIBL. 7 REF.Article

LOW TEMPERATURE GROWTH OF MOCVD GAAS LAYERS AT ATMOSPHERIC PRESSUREESCOBOSA A; KRAEUTLE H; BENEKING H et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 3; PP. 605-606; BIBL. 6 REF.Article

MEDIUM-POWER GAAS BIPOLAR TRANSISTORSBENEKING H; SU LM; PONSE F et al.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 4; PP. 5-14; BIBL. 18 REF.Article

A STUDY ON THE PHOTORESPONSES IN GAAS N-CHANNEL OPTICAL DETECTORSWEI J; KLEIN HJ; BENEKING H et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1442-1448; BIBL. 14 REF.Article

CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTORBENEKING H; ESCOBOSA A; KRAUTLE H et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 3; PP. 473-480; BIBL. 7 REF.Article

MONOLITHIC GAALAS/GAAS INFRARED-TO-VISIBLE WAVELENGTH CONVERTER WITH OPTICAL POWER AMPLIFICATIONBENEKING H; GROTE N; SVILANS MN et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 4; PP. 404-407; BIBL. 13 REF.Article

BURIED CHANNEL GAAS MESFET'S-SCATTERING PARAMETER AND LINEARITY DEPENDENCE ON THE CHANNEL DOPING PROFILEDEKKERS JJM; PONSE F; BENEKING H et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1065-1070; BIBL. 13 REF.Article

MULTI/DEMULTIPLEXING IN GBIT/S RANGE USING DUAL GATE GAAS M.E.S.F.E.T.S.BENEKING H; FILENSKY W; PONSE F et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 14; PP. 551-552; BIBL. 3 REF.Article

SENSITIVE GAALAS/GAAS WIDE-GAP EMITTER PHOTOTRANSISTOR FOR HIGH CURRENT APPLICATIONSSVILANS MN; GROTE N; BENEKING H et al.1980; IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 247-249; BIBL. 11 REF.Article

THE GAAS MESFET AS A PULSE REGENERATOR, AMPLIFIER, AND LASER MODULATOR IN THE GBITS RANGE.FILENSKY W; KLEIN HJ; BENEKING H et al.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 276-280; BIBL. 13 REF.Article

FAST PHOTOCONDUCTIVE GAAS DETECTORS MADE BY LASER STIMULATED MOCVDROTH W; SCHUMACHER H; BENEKING H et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 142-143; BIBL. 6 REF.Article

LATERAL PNP GAAS BIPOLAR TRANSISTOR PREPARED BY ION IMPLANTATIONKRAUTLE H; NAROZNY P; BENEKING H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 259-260; BIBL. 8 REF.Article

GAAS M.E.S.F.E.T. TECHNOLOGY AND CHARACTERISTICS FOR OPTICAL COMMUNICATION SYSTEMS.DEKKERS JJM; FILENSKY W; BENEKING H et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 9; PP. 272-274; BIBL. 3 REF.Article

Improving the quality of microelectronic devices by strained layer epitaxyBENEKING, H.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 20, Num 1-2, pp 41-47, issn 0921-5107Conference Paper

DER GAAS-SCHOTTKY-KONTAKT-FELDEFFEKTTRANSISTOR ALS PS-SCHALTER FUER MITTLERE LEISTUNGEN. = LE TRANSISTOR A EFFET DE CHAMP A CONTACT GAAS DE SCHOTTKY COMME CONTACTEUR POUR PUISSANCES MOYENNES DANS LE DOMAINE DE LA PRICOSECONDEKOHN E; STAHLMANN R; WULLER R et al.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 9; PP. 287-289; ABS. ANGL.; BIBL. 10 REF.Article

Ga_0.47In_0.53As enhancement- and depletion-mode MISFET's with very high transconductanceSPLETTSTOSSER, J; BENEKING, H.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 763-764, issn 0018-9383, 2 p.Article