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Une situation hôtelière atypiqueBENZAQUEN, M.Mexico : Lettre d'Information Scientifique et Technique. 1991, Num 26, pp 1-2Article

PHENOMENES STRATIGRAPHIQUES ET TECTONIQUES SUR LE POURTOUR DE LA BOUTONNIERE PALEOZOIQUE DU BOUDOUFOUD (MAROC ORIENTAL).BENZAQUEN M; HAMEL C.1969; NOTES MEM. SERV. GEOL. MAROC; MAR; 1969, VOL. 29, NUM. 0213, P. 15 A 17Miscellaneous

Variable-range-hopping conductivity in compensated n-type GaAsBENZAQUEN, M; WALSH, D.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7287-7289, issn 0163-1829Article

Evidence for delocalization in high purity n-type InPBENZAQUEN, M; WALSH, D.Solid state communications. 1994, Vol 89, Num 12, pp 1033-1036, issn 0038-1098Article

PRECISIONS SUR LA SUCCESSION STRATIGRAPHIQUE DU MESOZOIQUE DANS LE MASSIF MASGOUT-TERNI (MAROC ORIENTAL).BENZAQUEN M; HAMEL C; MARCAIS J et al.1969; NOTES MEM. SERV. GEOL. MAROC; MAR; 1969, VOL. 29, NUM. 0213, P. 11 A 13Miscellaneous

Very shallow donors in n-type GaAsBENZAQUEN, M; WALSH, D.Journal of applied physics. 1989, Vol 66, Num 3, pp 1206-1208, issn 0021-8979Article

ONTENIENTE.MARTINEZ W; BENZAQUEN M; CABANAS I et al.1975; MAPA GEOL. ESP., ESCALA 1:50000; ESP.; 1975, NUM. 0820, P. 1 A 49Map

CANALS.MARTINEZ W; BENZAQUEN M; CABANAS I et al.1976; MAPA GEOL. ESP., ESCALA 1:50000; ESP.; DA. 1976; NO 794; PP. 1-37; H.T. 3; BIBL. 3 P. 1/2; 1 CART.Serial Issue

Hall factor of doped n-type GaAs and n-type InPBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8947-8949, issn 0163-1829Article

Electrical properties of Cd-doped and Mg-doped InPBENZAQUEN, M; BELACHE, B; BLAAUW, C et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 6732-6738, issn 0163-1829Article

Electrical characteristics in InP with Mg-concentration gradientsBENZAQUEN, M; BELACHE, B; WALSH, D et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 23, pp 13105-13108, issn 0163-1829Article

Anomalous electrical behavior of n-type GaAsBENZAQUEN, M; WALSH, D; BENZAQUEN, R et al.Journal of applied physics. 1989, Vol 65, Num 12, pp 4874-4878, issn 0021-8979, 5 p.Article

Anomalous electrical behaviour of n-type InPBENZAQUEN, M; BEAUDOIN, M; WALSH, D et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 11, pp 7824-7827, issn 0163-1829Article

The Hall coefficient for electrons in a nearly full impurity bandBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Solid state communications. 1987, Vol 61, Num 12, pp 803-805, issn 0038-1098Article

Raman spectrum of a ZnSe/GaAs heterostructureWALSH, D; MAZURUK, K; BENZAQUEN, M et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 5, pp 2883-2885, issn 0163-1829Article

Coulomb gap and screening in impurity bandsMAZURUK, K; BENZAQUEN, M; WALSH, D et al.Solid state communications. 1989, Vol 69, Num 3, pp 337-339, issn 0038-1098Article

A new look at ZnSe/GaAs heterostructuresWALSH, D; MAZURUK, K; BENZAQUEN, M et al.Semiconductor science and technology. 1988, Vol 3, Num 2, pp 116-119, issn 0268-1242Article

Low-field magnetoresistance of n-type GaAs in the variable-range hopping regimeBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 15, pp 10933-10936, issn 0163-1829Article

High-temperature mobility of pure n-type InP epitaxial layersBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 8, pp 4388-4393, issn 0163-1829Article

Impurity conduction at low compensation levels in Zn-doped InPBENZAQUEN, M; BELACHE, B; BLAAUW, C et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 18, pp 12582-12589, issn 0163-1829, 8 p.Article

High-resolution data-acquisition system for high impedance measurements on semiconductorsWEISSFLOCH, P; BENZAQUEN, M; WALSH, D et al.Review of scientific instruments. 1987, Vol 58, Num 9, pp 1749-1754, issn 0034-6748Article

Hall factor of doped n-type GaAs and n-type InPBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8947-8949, issn 0163-1829Article

Electrical characteristics of zinc-doped indium phosphideBENZAQUEN, M; BELACHE, B; BLAAUW, C et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1694-1701, issn 0021-8979, 8 p.Article

The effect of a weak magnetic field on the varaible-range hopping regime in GaAsBENZAQUEN, M; WALSH, D; MAZURUK, K et al.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 36, pp 6143-6152, issn 0022-3719Article

Variable-range hopping in compensated epitactic n-InPBENZAQUEN, M; MAZURUK, K; WALSH, D et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 31, pp L1007-L1010, issn 0022-3719Article

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