MOESSBAUERSPEKTROSKOPIE AM SYSTEM KOBALT IN SILIZIUM = SPECTROSCOPIE MOSSBAUER DU SYSTEME COBALT DANS LA SILICEBERGHOLZ W.1981; DISS. ABSTR. INT., C, EUR. ABSTR.; ISSN 0307-6075; GBR; DA. 1981; VOL. 42; NO 1; PP. 68-69; ABS. ENGArticle

ESTUDIOS ARQUEOLOGICOS EN EL LITORAL DE ATACAMA ETUDES ARCHEOLOGIQUES SUR LE LITTORAL DE ATACAMABERGHOLZ H; BERGHOLZ W.PUBLICACIONES DEL MUSEO ARQUEOLOGICO DE LA SERENA. 1973, Num 15, pp 165-174Article

ON THE DIFFUSION OF CO IN SI AND ITS APPLICABILITY TO THE SI INTRINSIC DEFECT PROBLEMBERGHOLZ W.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 6; PP. 1099-1113; H.T. 1; BIBL. 27 REF.Article

PRECIPITATION OF COBALT IN SILICON STUDIED BY MOESSBAUER SPECTROSCOPYBERGHOLZ W; SCHROETER W.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 2; PP. 489-498; ABS. GER; BIBL. 42 REF.Article

Implantation defects below mask edges in silicon : structure and effect on devicesCERVA, H; BERGHOLZ, W.Journal of the Electrochemical Society. 1993, Vol 140, Num 3, pp 780-786, issn 0013-4651Article

Impact of research on defects in silicon on the microelectronic industryBERGHOLZ, W; GILLES, D.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 5-23, issn 0370-1972Article

An FT-IR study of silicon dioxides for VLSI microelectronicsBENSCH, W; BERGHOLZ, W.Semiconductor science and technology. 1990, Vol 5, Num 5, pp 421-428, issn 0268-1242, 8 p.Article

The gettering of transition metals by oxygen-related defects in siliconFALSTER, R; BERGHOLZ, W.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1548-1559, issn 0013-4651Article

A fast, preparation-free method to detect iron in siliconZOTH, G; BERGHOLZ, W.Journal of applied physics. 1990, Vol 67, Num 11, pp 6764-6771, issn 0021-8979Article

A MOESSBAUER-SPECTROSCOPY STUDY OF THE ANNEALING OF SUPERSATURATED SOLUTIONS OF ⁵⁷CO IN SILICONBERGHOLZ W; DAMGAARD S; PETERSEN JW et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 289-300; ABS. GER; BIBL. 29 REF.Article

COMPARISON OF MOESSBAUER SPECTRA OF ⁵⁷CO IN SILICON FOR HIGH-TEMPERATURE ION-IMPLANTED AND FOR DIFFUSED SAMPLESWEYER G; KETTSCHAU A; GREBE G et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. 459-466; ABS. GER; BIBL. 25 REF.Article

Detection of fast diffusing metal impurities in silicon by haze test and by modulated optical reflectance: a comparisonALPERN, P; BERGHOLZ, W; KAKOSCHKE, R et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 12, pp 3841-3848, issn 0013-4651, 8 p.Article

Demolit - ein Expansivmittel zur Zerstörung mineralischer Rohstoffe = La demolite: un agent expensif pour détruire les matières premières minérales = Demolit - an expanding agent for shattering mineralsECKLER, H. -O; BERGHOLZ, W; KORTH, D et al.Neue Bergbautechnik. 1986, Vol 16, Num 4, pp 150-152, issn 0047-9403Article

Enhanced oxygen diffusion and precipitation in siliconBERGHOLZ, W; HUTCHISON, J. L; PIROUZ, P et al.Journal of microscopy (Print). 1986, Vol 141, Num 2, pp 143-154, issn 0022-2720Article

Reactions of cobalt in silicon with electron-irradiation-induced defects = Reaktionen von Kobalt in Silizium mit Defekten, die durch Elektronenbestrahlung induziert werdenBERGHOLZ, W; DAMGAARD, S; PETERSEN, J.W et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 239-246, issn 0031-8965Article

A Moessbauer-spectroscopy study of the annealing of supersaturated solutions of ⁵⁷Co in silicon = Une étude par spectroscopie Mössbauer du recuit de solutions solides sursaturées de ⁵⁷Co dans le silicium = Eine Moessbauer-Spektroskopie-Untersuchung des Gluehens uebersaettigter Mischkristalle von ⁵⁷Co in SiliziumBERGHOLZ, W; DAMGAARD, S; PETERSEN, J.W et al.Physica status solidi. A. Applied research. 1983, Vol 75, Num 1, pp 289-300, issn 0031-8965Article

Elymat measurement of intentionally contaminated and dry etched wafersWITTMANN, J; BERGHOLZ, W; HOFFMANN, H et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 1, pp 313-320, issn 0013-4651Article

Impact of the electronic structure on the solubility and diffusion of 3d transition elements in siliconGILLES, D; SCHRÖTER, W; BERGHOLZ, W et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 9, pp 5770-5782, issn 0163-1829Article

Mössbauer spectroscopical and electron microscopical investigations of the behaviour of cobalt in siliconPASEMANN, M; BERGHOLZ, W; SCHRÖTER, W et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 273-280, issn 0031-8965Article

Three hundred-mm wafers : a technological and an economical challengeDIETRICH, H; BERGHOLZ, W; DUBBERT, S et al.Microelectronic engineering. 1999, Vol 45, Num 2-3, pp 183-190, issn 0167-9317Article

Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopyLACZIK, Z; BOOKER, G. R; BERGHOLZ, W et al.Applied physics letters. 1989, Vol 55, Num 25, pp 2625-2627, issn 0003-6951, 3 p.Article

Reactions of cobalt in silicon with electron-irradiation-induced defectsBERGHOLZ, W; DAMGAARD, S; PETERSEN, J. W et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp 239-246, issn 0031-8965Article

Metal contamination control in silicon VLSI technology. I: FundamentalsBERGHOLZ, W; ZOTH, G; WENDT, H et al.Siemens Forschungs- und Entwicklungsberichte. 1987, Vol 16, Num 6, pp 241-247, issn 0370-9736Article

A dislocation formation model of trench-induced dislocation in dynamic random access memoriesDELLITH, M; BOOKER, G. R; KOLBESEN, B. O et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 1, pp 210-215, issn 0013-4651Article

Electron microdiffraction studies of new SiO₂ precipitates in siliconKIM, Y; SPENCE, J. C. H; LONG, N et al.Journal of applied physics. 1987, Vol 62, Num 2, pp 419-422, issn 0021-8979Article