Large grained polycrystalline silicon films by solid phase crystallization of phosphorus-doped amorphous siliconBERGMANN, R. B; KRINKE, J.Journal of crystal growth. 1997, Vol 177, Num 3-4, pp 191-195, issn 0022-0248Article

From polycrystalline to single crystalline silicon on glassWERNER, J. H; DASSOW, R; RINKE, T. J et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 95-100, issn 0040-6090Conference Paper

Large-grained polycrystalline silicon on glass by copper vapor laser annealingKÖHLER, J. R; DASSOW, R; BERGMANN, R. B et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 129-132, issn 0040-6090Conference Paper

Quasi-monocrystalline silicon for thin-film devicesRINKE, T. J; BERGMANN, R. B; WERNER, J. H et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 68, Num 6, pp 705-707, issn 0947-8396Article

Fabrication of single crystalline SiC layer on high temperature glassTONG, Q.-Y; LEE, T. H; WERNER, P et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 5, pp L111-L113, issn 0013-4651Article

Growth of polycrystalline silicon films on glass by high-temperature chemical vapour depositionBERGMANN, R. B; BRENDEL, R; WOLF, M et al.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 224-227, issn 0268-1242Article

Role of critical size of nuclei for liquid-phase epitaxy on polycrystalline Si filmsKÜHNLE, J; BERGMANN, R. B; WERNER, J. H et al.Journal of crystal growth. 1997, Vol 173, Num 1-2, pp 62-68, issn 0022-0248Article

Low temperature epitaxial silicon films deposited by ion-assisted depositionWAGNER, T. A; OBERBECK, L; BERGMANN, R. B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 319-322, issn 0921-5107Conference Paper

The future of crystalline silicon films on foreign substratesBERGMANN, R. B; WERNER, J. H.Thin solid films. 2002, Vol 403-04, pp 162-169, issn 0040-6090Conference Paper

Thin film solar cells on glass based on the transfer of monocrystalline Si filmsBERGMANN, R. B; RINKE, T. J; WAGNER, T. A et al.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, pp 355-361, issn 0927-0248Conference Paper

Formation of polycrystalline silicon with log-normal grain size distributionBERGMANN, R. B; SHI, F. G; QUEISSER, H. J et al.Applied surface science. 1998, Vol 123-24, pp 376-380, issn 0169-4332Conference Paper

Growth mechanisms in laser crystallization and laser interference crystallizationAICHMAYR, G; TOET, D; MULATO, M et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 921-924, issn 0022-3093, bConference Paper