LOCAL SPIN-DENSITY DESCRIPTION OF MULTIPLE METAL-METAL BONDING: MO₂ AND CR₂BERNHOLC J; HOLZWARTH NAW.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 19; PP. 1451-1454; BIBL. 29 REF.Article

SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS. I: TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAASBERNHOLC J; PANTELIDES ST.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 4; PP. 1780-1789; BIBL. 41 REF.Article

THEORY OF BINDING ENERGIES OF ACCEPTORS IN SEMICONDUCTORS.BERNHOLC J; PANTELIDES ST.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 10; PP. 4935-4947; BIBL. 32 REF.Article

SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS. II: SELF-CONSISTANT FORMULATION AND APPLICATION TO THE VACANCY IN SILICONBERNHOLC J; LIPARI NO; PANTELIDES ST et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 8; PP. 3545-3562; BIBL. 62 REF.Article

SELF-CONSISTENT METHOD FOR POINT DEFECTS IN SEMICONDUCTORS: APPLICATION TO THE VACANCY IN SILICONBERNHOLC J; LIPARI NO; PANTELIDES ST et al.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 13; PP. 895-899; BIBL. 12 REF.Article

THE EFFECTIVE-MASS NATURE OF DEEP-LEVEL POINT-DEFECT STATES IN SEMICONDUCTORSPANTELIDES ST; LIPARI NO; BERNHOLC J et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 10; PP. 1045-1049; BIBL. 17 REF.Article

ELECTRONIC STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICONLIPARI NO; BERNHOLC J; PANTELIDES ST et al.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 18; PP. 1354-1357; BIBL. 11 REF.Article

As_Ga-X_I complexes as models for the EL2 center in GaAsZHANG, Q.-M; BERNHOLC, J.Physical review. B, Condensed matter. 1993, Vol 47, Num 3, pp 1667-1670, issn 0163-1829Article

Comparison of the electronic properties of Mo₂O₂(μ-S)₂(S₂)₂^2- and Mo₂S₂(μ-S)₂(S₂)₂^2-BERNHOLC, J; STIEFEL, E. I.Inorganic chemistry (Print). 1986, Vol 25, Num 22, pp 3876-3879, issn 0020-1669Article

Atomic structure and doping of microtubulesJAE-YEL YI; BERNHOLC, J.Physical review. B, Condensed matter. 1993, Vol 47, Num 3, pp 1708-1711, issn 0163-1829Article

Isomerization of C₆₀ fullerenesJAE-YEL YI; BERNHOLC, J.The Journal of chemical physics. 1992, Vol 96, Num 11, pp 8634-8636, issn 0021-9606Article

Kinetics of cluster formation in the laser vaporization source: carbon clustersBERNHOLC, J; PHILLIPS, J. C.The Journal of chemical physics. 1986, Vol 85, Num 6, pp 3258-3267, issn 0021-9606Article

Reactivity, stability, and formation of fullerenesJAE-YEL YI; BERNHOLC, J.Physical review. B, Condensed matter. 1993, Vol 48, Num 8, pp 5724-5727, issn 0163-1829Article

Electronic structure of MoS₄^2- and Mo₃S₉^2-BERNHOLC, J; STIEFEL, E. I.Inorganic chemistry (Print). 1985, Vol 24, Num 9, pp 1323-1330, issn 0020-1669Article

Atomic structure of Al-GaAs(110) interfacesJAE-YEL YI; BERNHOLC, J.Physical review letters. 1992, Vol 69, Num 3, pp 486-489, issn 0031-9007Article

Pressure effects on self-diffusion in siliconANTONELLI, A; BERNHOLC, J.Physical review. B, Condensed matter. 1989, Vol 40, Num 15, pp 10643-10646, issn 0163-1829Article

Kinetics of aggregation of carbon clustersBERNHOLC, J; PHILIPPS, J. C.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7395-7398, issn 0163-1829Article

IDENTIFICATION AND PROPERTIES OF DEFECTS IN GAPSCHEFFLER M; PANTELIDES ST; LIPARI NO et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 6; PP. 413-416; BIBL. 18 REF.Article

Theory of Zn-enhanced disordering in GaAs/AlAs superlatticesWANG, C; ZHANG, Q.-M; BERNHOLC, J et al.Physical review letters. 1992, Vol 69, Num 26, pp 3789-3792, issn 0031-9007Article

Nitrogen and potential n-type dopants in diamondKAJIHARA, S. A; ANTONELLI, A; BERNHOLC, J et al.Physical review letters. 1991, Vol 66, Num 15, pp 2010-2013, issn 0031-9007Article

Structural transition in aluminum clustersYI, J.-Y; BERNHOLC, J; CAR, R et al.Chemical physics letters. 1990, Vol 174, Num 5, pp 461-466, issn 0009-2614, 6 p.Article

Recent developments and applications of the real-space multigrid methodBERNHOLC, J; HODAK, Miroslav; WENCHANG LU et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 29, issn 0953-8984, 294205.1-294205.8Conference Paper

Structural distortions in metal clustersJAE-YEL YI; OH, D. J; BERNHOLC, J et al.Physical review letters. 1991, Vol 67, Num 12, pp 1594-1597, issn 0031-9007Article

Formation energies, abundances, and the electronic structure of native defects in cubic SiCWANG, C; BERNHOLC, J; DAVIS, R. F et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 17, pp 12752-12755, issn 0163-1829Article

Localized states and the electronic properties of a hydrogenated defect in amorphous siliconDIVINCENZO, D. P; BERNHOLC, J; BRODSKY, M. H et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 6, pp 3246-3257, issn 0163-1829Article