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POWER MOSFET TEMPERATURE MEASUREMENTSBLACKBURN DL; BERNING DW.1982; PESC '82 RECORD. ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE. 13/1982-06-14/CAMBRIDGE MA; USA; NEW YORK: IEEE; DA. 1982; PP. 400-407; BIBL. 8 REF.Conference Paper

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: A LASER SCANNER FOR SEMICONDUCTOR DEVICES.SAWYER DE; BERNING DW.1977; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1977; NO 400-24; PP. (71P.); BIBL. 10 REF.Serial Issue

LASER SEANNING OF MOSIC'S REVEALS INTERNAL LOGIC STATES NONDESTRUCTIVELY.SAWYER DE; BERNING DW.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 3; PP. 393-394; BIBL. 3 REF.Article

MAPPING NONLINEARITIES OVER THE ACTIVE REGIONS OF SEMICONDUCTOR DEVICES.SAWYER DE; BERNING DW.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 11; PP. 1635-1637; BIBL. 4 REF.Article

LASER SCANNING OF ACTIVE SEMICONDUCTOR DEVICES.SAWYER DE; BERNING DW.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 111-114; BIBL. 2 REF.Conference Paper

LASER SCANNING OF ACTIVE INTEGRATED CIRCUITS AND DISCRETE SEMICONDUCTOR DEVICES.SAWYER DE; BERNING DW; LEWIS DC et al.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 6; PP. 37-48 (6P.); BIBL. 11 REF.Article

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