Dynamics in the system of dipolar impurity centers in crystalsBERSUKER, G. I.Physica status solidi. B. Basic research. 1988, Vol 148, Num 1, pp 243-249, issn 0370-1972Article

Phase transitions in systems with reorienting impurity centresBERSUKER, G. I.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 37, pp 6543-6549, issn 0953-8984Article

Le pic central des spectres de diffusion de la lumière près des transformations de phase de structureBERSUKER, G. I.Fizika tverdogo tela. 1986, Vol 28, Num 6, pp 1934-1937, issn 0367-3294Article

The origin of the dynamical central peak the Brillouin scatteringBERSUKER, G. I.Physica status solidi. B. Basic research. 1990, Vol 162, Num 2, pp K123-K125, issn 0370-1972Article

Interaction des impuretés Li dans le crystal KTaO3 par l'intermédiaire du champ des phononsBERSUKER, G. I.Fizika tverdogo tela. 1986, Vol 28, Num 12, pp 3716-3721, issn 0367-3294Article

The pseudo-Jahn-Teller dynamics of central protons in porphinsBERSUKER, G. I; POLINGER, V. Z.Chemical physics. 1984, Vol 86, Num 1-2, pp 57-65, issn 0301-0104Article

Multimode pseudo Jahn-Teller effect for off-centre impurities in crystalsBERSUKER, G. I; POLINGER, V. Z.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp 401-408, issn 0370-1972Article

The nature of the covalent bond : the existence and origin of nonnuclear attractorsBERSUKER, G. I; CHUNYANG PENG; BOGGS, J. E et al.Journal of physical chemistry (1952). 1993, Vol 97, Num 37, pp 9323-9329, issn 0022-3654Article

A study of highly crystalline novel beryllium oxide film using atomic layer depositionYUM, J. H; AKYOL, T; LEI, M et al.Journal of crystal growth. 2011, Vol 334, Num 1, pp 126-133, issn 0022-0248, 8 p.Article

Grain boundary-driven leakage path formation in HfO2 dielectricsBERSUKER, G; YUM, J; KITSCH, P et al.Solid-state electronics. 2011, Vol 65-66, pp 146-150, issn 0038-1101, 5 p.Conference Paper

Advanced high-k/metal gate stack progress and challenges - a materials and process integration perspectivePARK, C. S; LYSAGHT, P; HUSSAIN, M. M et al.International journal of materials research. 2010, Vol 101, Num 2, pp 155-163, issn 1862-5282, 9 p.Article

Modeling complexity of a complex gate oxideDEMKOV, Alexander A; SHARIA, O; LUO, X et al.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1763-1766, issn 0167-9317, 4 p.Conference Paper

Studies of bonding defects, and defect state suppression in HfO₂ by soft X-ray absorption and photoelectron spectroscopiesLUCOVSKY, G; SEO, H; FLEMING, L. B et al.Surface science. 2007, Vol 601, Num 18, pp 4236-4241, issn 0039-6028, 6 p.Conference Paper

N incorporation into ALD HfO₂ gate dielectric using ion implantationLI, H.-J; POMPL, T; PRICE, J et al.DRC : Device research conference. 2004, pp 15-16, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Recovery of NBTI degradation in HfSiON/metal gate transistorsHARRIS, H. Rusty; CHOI, Rino; LEE, B. H et al.International Integrated Reliability Workshop. 2004, pp 132-135, isbn 0-7803-8517-9, 1Vol, 4 p.Conference Paper

Electron Trap Transformation Under Positive-Bias Temperature StressingGAO, Y; ANG, D. S; BERSUKER, G et al.IEEE electron device letters. 2013, Vol 34, Num 3, pp 351-353, issn 0741-3106, 3 p.Article

Evaluation of the N- and La-induced defects in the high-_K gate stack using low frequency noise characterizationYOUNG, C. D; VEKSLER, D; RUMYANTSEV, S et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1255-1258, issn 0167-9317, 4 p.Conference Paper

Spectroscopic studies of O-vacancy defects in transition metal oxidesLUCOVSKY, G; LÜNING, J; FLEMING, L. B et al.Journal of materials science. Materials in electronics. 2007, Vol 18, issn 0957-4522, S263-S266, SUP1Conference Paper

Electrical observation of deep traps in high-κ/metal gate stack transistorsHARRIS, H. R; CHOI, R; SIM, J. H et al.IEEE electron device letters. 2005, Vol 26, Num 11, pp 839-841, issn 0741-3106, 3 p.Article

Hot carrier reliability of HfSiON PMOSFETs with TiN gateSIM, J. H; LEE, B. H; CHOI, R et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 157-160, isbn 0-7803-8454-7, 1Vol, 4 p.Conference Paper

Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operationKANG, C. Y; CHOI, R; SIM, J. H et al.International Electron Devices Meeting. 2004, pp 485-488, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Charges in HFO₂ ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Microscopy study of the conductive filament in HfO₂ resistive switching memory devicesPRIVITERA, S; BERSUKER, G; BUTCHER, B et al.Microelectronic engineering. 2013, Vol 109, pp 75-78, issn 0167-9317, 4 p.Article

Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substratesYUM, J. H; AKYOL, T; LEI, M et al.Thin solid films. 2012, Vol 520, Num 7, pp 3091-3095, issn 0040-6090, 5 p.Article

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETsDEORA, S; PAUL, A; BIJESH, R et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 255-257, issn 0741-3106, 3 p.Article