Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("BIAS VOLTAGE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 3270

  • Page / 131
Export

Selection :

  • and

COMPARATEUR AVEC CORRECTIONZHUKOV AV; MAKHOV VN.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 116-118; BIBL. 3 REF.Article

BIAS INFLUENCE ON CORROSION OF PLASTIC ENCAPSULATED DEVICE METAL SYSTEMS.REICH B.1976; I.E.E.E. TRANS. RELIABIL.; U.S.A.; DA. 1976; VOL. R-25; NO 5; PP. 296-298; BIBL. 4 REF.Article

A UNIDIRECTIONAL THRESHOLD SWITCHBRODIE DE; MOORE CJ.1981; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1981; VOL. 59; NO 2; PP. 173-176; ABS. FRE; BIBL. 4 REF.Article

INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODESDENEUVILLE A; BRODSKY MH.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1414-1421; BIBL. 16 REF.Article

EFFECT OF CHLORINE ON THE NEGATIVE BIAS INSTABILITY IN MOS STRUCTURES.HESS DW.1977; J. ELECTRO CHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 740-743; BIBL. 17 REF.Article

INTERACTION OF HIGH POWER P-I-N DIODES AND DRIVING CIRCUIT DURING FORWARD-BIAS SWITCHING.GEORGOPOULOS CJ.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 295-302; BIBL. 11 REF.Article

ETUDE DE LA SENSIBILITE AUX DEFORMATIONS DES DIODES TUNNEL EN GASB POUR DES TENSIONS DE POLARISATION NEGATIVESANTANAVICHYUS RP; VALATSKA KK.1979; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1979; NO 4; PP. 543-548; ABS. LIT/ENG; BIBL. 15 REF.Article

PARTICULARITES DU FONCTIONNEMENT DES PHOTORESISTANCES A IMPURETE AVEC UNE POLARISATION FIXEVOJTSEKHOVSKIJ AV.1978; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; SUN; DA. 1978; VOL. 21; NO 7; PP. 16-23; BIBL. 15 REF.Article

A COMPARISON OF GAMMA-INDUCED DEGRADATION AND FORWARD BIAS-INDUCED DEGRADATION IN GAP: ZN, O. LEDS.BARNES CE.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 4; PP. 589-617; BIBL. 37 REF.Article

A DESIGN TECHNIQUE FOR SPECIFIC REVERSE BIAS CHARACTERISTICS OF A P-I-N DIODE.RATNAKUMAR KN; KAKATI D.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. K13-K16; BIBL. 4 REF.Article

MEASUREMENTS OF THE ELECTRON ACCUMULATION ON TWO SCHOTTKY DIODES CONNECTED METAL TO METAL.HASHIZUME N; KATAOKA S.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 17; PP. 495-496; BIBL. 8 REF.Article

INSTABILITIES IN THIN TUNNEL JUNCTIONS.KONKIN MK; ADLER JG.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 436-437; BIBL. 3 REF.Article

RESISTANCE NEGATIVE COMMANDEE PAR LE COURANT DANS DES DIODES DE GAAS EN POLARISATION INVERSEBRODOVOJ VA; KORONKEVICH VN; PEKA GP et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 29-34; BIBL. 13 REF.Article

ANALYSIS OF FORWARD-BIAS P-I-N-DIODE INDUCTIVE DRIVING.GEORGOPOULOS CJ.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 394-402; BIBL. 20 REF.Article

THEORY OF SELF-RESONANT MODES WITH A ZERO-EXTERNAL MAGNETIC FIELD IN JOSEPHSON TUNNELLING JUNCTION.YIH SHUN GOU; CHIEN SHINE CHUNG.1978; J. NATION. CHIAO TUNG UNIV.; TWN; DA. 1978; VOL. 4; PP. 49-56; BIBL. 12 REF.Article

ETUDE DE LA CHUTE DE TENSION "DIRECT-PASSANT" DANS LES THYRISTORS.ENEA G.1978; ONDE ELECTR.; FR.; DA. 1978; VOL. 58; NO 3; PP. 222-228; ABS. ANGL.; BIBL. 8 REF.Article

EFFET DE LA POLARISATION ENTRE SUPPORT ET CANAL D'UN TRANSISTOR METAL-DIELECTRIQUE-SEMICONDUCTEUR AU GERMANIUM SUR LA MOBILITE EFFECTIVE DES ELECTRONS.KVON ZE DON; NEIZVESTNYJ IG; OVSYUK VN et al.1978; MIKROELEKTRONIKA; SUN; DA. 1978; VOL. 7; NO 4; PP. 361-365; BIBL. 10 REF.Article

ETUDE D'UN EFFET DE DIODE DANS UNE STRUCTURE SI-SIO2-METALDORODNEV VN; ADAMCHUK VK.1978; VEST. LENINGRAD. UNIV.; SUN; DA. 1978; NO 16; PP. 37-43; ABS. ENG; BIBL. 13 REF.Article

DISTRIBUTION SPECTRALE DE LA LUMINESCENCE DU MESOPLASMA DE JONCTIONS P-N DE SILICIUM A AVALANCHE SOUS POLARISATION CONSTANTEBALODIS YA K; PURITIS T YA.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 5; PP. 9-13; ABS. ANGL.; BIBL. 14 REF.Article

IMPROVED Y-BRIDGE FOR REVERSE-BIASED DIODE MEASUREMENTS.SYNEK S; VASINA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 232-238; ABS. RUSSE; BIBL. 4 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

CHIP CORROSION IN PLASTIC PACKAGESBERG HM; PAULSON WM.1980; MICROELECTRON. AND KELIABIL.; GBR; DA. 1980; VOL. 20; NO 3; PP. 247-263; BIBL. 26 REF.Article

SWITCHING PHENOMENA IN REVERSE-BIASED GOLD-DIFFUSED SILICON P+-I - N+ DIODESSUPADECH S; HENG T.1979; PROC. I.E.E.E.; USA; DA. 1979; VOL. 67; NO 4; PP. 692-693; BIBL. 2 REF.Article

NUMERICAL SIMULATION OF A FORWARD-BIASED P-I-N STRUCTURE WITH BAND-TO-BAND AUGER RECOMBINATIONFREIDIN B; VELMRE E.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 701-703; BIBL. 16 REF.Article

EFFECT OF BIAS VOLTAGE ON AM NOISE OF GUNN OSCILLATORS.SINGH DN.1977; J. INSTIT. ELECTRON. TELECOMMUNIC ENGRS; INDIA; DA. 1977; VOL. 23; NO 9; PP. 573-574; BIBL. 4 REF.Article

  • Page / 131