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HIGH INJECTION EFFECTS ON CONDUCTIVITY AND CARRIER LIFETIME IN P-TYPE SILICON MATERIALBIELLE DASPET D; ESPIOUSSAS F; JOHAN A et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 5; PP. 945-959; ABS. FRE; BIBL. 13 REF.Article

Investigation of the thermal behavior of a RTP furnaceHENDA, R; SCHEID, E; BIELLE-DASPET, D et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 362-365, issn 0894-6507Article

Second-oxidation properties of thin polysilicon films grown by LPCVD and heavily in situ boron-dopedBOUKEZZATA, M; BIROUK, B; BIELLE-DASPET, D et al.Thin solid films. 1998, Vol 335, Num 1-2, pp 70-79, issn 0040-6090Article

Short-circuit photocurrent and open-circuit photovoltage decays applied to base carrier lifetime measurements in silicon solar-cellsBIELLE-DASPET, D; LAGOUIN, M; THEREZ, F et al.Photovoltaic solar energy conference. 5. 1984, pp 131-135Conference Paper

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Structural and electrical changes in polycrystalline silicon thin films that are heavily in situ boron-doped and thermally oxidized with dry oxygenBOUKEZZATA, M; BIROUK, B; MANSOUR, F et al.Advanced materials (Weinheim). 1997, Vol 9, Num 12, pp 271-279, issn 0935-9648Article

Etude de procédés technologiques pour le contrôle des propriétés de commutation des composants bipolaires de puissance = Technological process for the control of the bipolar power structure switching performanceBagneres-Moisseron, Monique; Bielle-Daspet, D.1995, 140 p.Thesis

Super large grain polycrystalline silicon obtained from pyrolysis of Si₂H₆ and annealingSCHEID, E; DE MAUDUIT, B; TAURINES, P et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp L2105-L2107, issn 0021-4922, 2Article

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GaAlAs-GaAs solar cells development prospective for space applications under concentrationTHEREZ, F; CHIKOUCHE, A; ROUX, M et al.Photovoltaic generators in space. European symposium. 4. 1984, pp 95-99Conference Paper

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Technological process effect on the carrier lifetime degradation of silicon solar-cell base layer irradiated by 1 MeV electrons (boron doping case)BIELLE-DASPET, D; LAGOUIN, M; THEREZ, F et al.Photovoltaic generators in space. European symposium. 4. 1984, pp 123-130Conference Paper

Characterization of sub-micrometre silicon films (Si-LPCVD) heavily in situ boron-doped and submitted to treatments of dry oxidationAÏT-KAKI, A; BOULAKROUNE, M; BOUKEZZATA, M et al.Semiconductor science and technology. 2002, Vol 17, Num 9, pp 983-992, issn 0268-1242Article

An understanding of in situ boron doped polysilicon films by characterization and simulationAZZARO, C; SCHEID, E; BIELLE-DASPET, D et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.79-C2.85Conference Paper

Silicon deposition from disilane : experimental study and modellingGUEYE, M; SCHEID, E; TAURINES, P et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.63-C2.70Conference Paper

Electron induced degradation and recovery under space conditions and lithium-doped silicon solar cellsROUX, M; REULET, R; BERNARD, J et al.Radiation effects. 1984, Vol 81, Num 3-4, pp 263-275, issn 0033-7579Article

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