ON THE SPECTRAL INTENSITY DISTRIBUTION OF DONOR-ACCEPTOR PAIR RECOMBINATION IN GAP.BINDEMANN R; UNGER K.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 66; NO 1; PP. 133-143; ABS. ALLEM.; BIBL. 24 REF.Article

LE MONOCHROMATEUR DOUBLE A RESEAU GDM 1000 DU VEB CARL ZEISS JENA - ELEMENT ESSENTIEL D'UN POSTE DE MESURE UNIVERSEL POUR DES ETUDES DE LA LUMINESCENCE SUR DES SEMI-CONDUCTEURS A LARGE BANDE.FISCHER H; BINDEMANN R.1977; REV. IENA; ALLEM.; DA. 1977; VOL. 17; NO 5; PP. 239-244; BIBL. 12 REF.Article

ELEKTRONIK ZUM LOGARITHMISCHEN NACHWEIS VERRAUSCHTER SIGNALE UND DEREN ANWENDUNG BEI LUMINESZENZUNTERSUCHUNGEN. = ELECTRONIQUE POUR LA DETECTION LOGARITHMIQUE DES SIGNAUX AVEC UN BRUIT DE FOND ELEVE ET APPLICATION A L'ENREGISTREMENT DES SPECTRES DE LUMINESCENCEFISCHER H; BINDEMANN R.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 6; PP. 519-524; ABS. ANGL.; BIBL. 6 REF.Article

ENERGY STATES OF ISOLATED DONOR-ACCEPTOR PAIRS AND THE INFLUENCE OF POLARIZATION INTERACTION ON THE PAIR ENERGYBINDEMANN R; UNGER K.1973; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1973; VOL. 56; NO 2; PP. 563-572; ABS. ALLEM.; BIBL. 17 REF.Serial Issue

DLTS CAPACITANCE STUDIES ON DEEP LEVEL CENTRES IN VPE GAP:NBREITENSTEIN O; RHEINLAENDER B; BINDEMANN R et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. 79-86; ABS. GER; BIBL. 20 REF.Article

DETERMINATION OF THE CONCENTRATION OF SUBSTITUTIONAL O IN GAP BY MEANS OF DONOR-ACCEPTOR PAIR LUMINESCENCE.BINDEMANN R; FISCHER H; KREHER K et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 2; PP. 529-533; ABS. ALLEM.; BIBL. 25 REF.Article

DETERMINATION OF THE DIELECTRIC CONSTANT OF GAP FROM S-C DONOR-ACCEPTOR PAIR SPECTRABINDEMANN R; HEMPEL E; KREHER K et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 2; PP. K201-K203; BIBL. 6 REF.Article

MINORITY CARRIER LIFETIME IN VPE-GAP:N,TE AT VARIOUS EXCITATION LEVELSWANDEL K; WURBS G; BINDEMANN R et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 233-243; ABS. GER; BIBL. 14 REF.Article

DETERMINATION OF NITROGEN CONCENTRATION IN GAP EPITAXIAL LAYERS BY TWO INDEPENDENT METHODSHANSEL T; BRUHL HG; BINDEMANN R et al.1979; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1979; VOL. 14; NO 8; PP. 977-984; ABS. GER; BIBL. 10 REF.Article

LUMINESCENCE FROM ELECTRON-HOLE DROPS IN UNDOPED GAPSCHWABE R; THUSELT F; WEINERT H et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 2; PP. 561-570; ABS. GER; BIBL. 20 REF.Article

On carrier lifetimes in a-Si:H : comparison of Monte-Carlo simulations with frequency-resolved spectroscopyGUTSCHKER, O; BINDEMANN, R.Philosophical magazine letters. 1991, Vol 64, Num 5, pp 291-296, issn 0950-0839Article

LUMINESCENCE OF EXCITONS BOUND BY DISORDER-POTENTIAL FLUCTUATIONS IN CDS_1-XSE_X: SPATIAL DIFFUSION, EXCITATION LEVEL DEPENDENCE, AND KINETICSAGEKYAN V; BINDEMANN R; SCHWABE R et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. K43-K46; BIBL. 4 REF.Article

LUMINESCENCE FROM AN ELECTRON-HOLE LIQUID IN THE INDIRECT COMPOUND GA(AS_1-XP_X)WILKE I; SCHWABE R; BINDEMANN R et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 101; NO 2; PP. 541-546; ABS. GER; BIBL. 15 REF.Article

Relaxation and recombination of photoexcited carriers in a-Si:H calculated by Monte-Carlo simulationsGUTSCHKER, O; BINDEMANN, R.Physica status solidi. B. Basic research. 1992, Vol 170, Num 1, pp 339-351, issn 0370-1972Article

RADIATIVE RECOMBINATION FROM ELECTRON-HOLE DROPS IN N-DOPED GAP.SCHWABE R; THUSELT F; BINDEMANN R et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 226-228; BIBL. 13 REF.Article

ELECTRON-HOLE LIQUID IN GAP. THE INFLUENCE OF THE ISOELECTRONIC IMPURITY NITROGENSCHWABE R; THUSELT F; WEINERT H et al.1979; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1979; VOL. 95; NO 2; PP. 571-583; ABS. GER; BIBL. 35 REF.Article

Mobility-lifetime products of a-Si:H prepared at high deposition rate with triethylboronBÖHME, T; KLUGE, G; KOTTWITZ, A et al.Physica status solidi. A. Applied research. 1993, Vol 136, Num 1, pp 171-180, issn 0031-8965Article

Decay behaviour of high-excitation luminescence in GaP:N.II: Experimental results on the densities of the coexisting phases and the relevant recombination processesWEINERT, H; BINDEMANN, R; KREHER, K et al.Physica status solidi. B. Basic research. 1983, Vol 117, Num 1, pp 247-253, issn 0370-1972Article

Enhancement of photoconductivity in magnetron-sputtered a-Si:H doped with nitrogenDRÜSEDAU, T; ECKLER, M; BINDEMANN, R et al.Physica status solidi. B. Basic research. 1989, Vol 153, Num 2, pp K119-K123, issn 0370-1972Article

Photoconductive a-Si:H with dominant monohydride bonding prepared by DC-magnetron sputteringDRÜSEDAU, T; ECKLER, M; BINDEMANN, R et al.Physica status solidi. A. Applied research. 1988, Vol 108, Num 1, pp 285-293, issn 0031-8965, 9 p.Article

Defect density of a-Si:H(B) prepared at high deposition rate with triethylboronSCHMAL, J; KLUGE, G; KOTTWITZ, A et al.Physica status solidi. A. Applied research. 1992, Vol 134, Num 1, pp 167-181, issn 0031-8965Article

Automatische Dickenbestimmung dünner Schichten im NIR-Spektralbereich = Détermination automatique de l'épaisseur des couches minces par spectrométrie IR proche = Automatic thickness determination of thin layers in the NIR spectral regionSALZER, R; HOYER, H; DRESSLER, J et al.Chemische Technik (Berlin, DDR, 1949). 1988, Vol 40, Num 11, pp 488-489, issn 0045-6519Article

Luminescence by IR-stimulation of metastable carriers in a-Si:H : experiment and Monte-Carlo simulationVOLLMAR, H.-P; BINDEMANN, R.Journal of non-crystalline solids. 1991, Vol 137-38, pp 587-590, issn 0022-3093, 1Conference Paper

Photoelectrical properties of a-Si:H in dependence on growth conditions and degradationDRESCHER, D; SCHMAL, J; BINDEMANN, R et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 1, pp 207-215, issn 0031-8965Article

Photoluminescence of nitrogen-doped VPE GaAsSCHWABE, R; SEIFERT, W; BUGGE, F et al.Solid state communications. 1985, Vol 55, Num 2, pp 167-173, issn 0038-1098Article