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PARTICULARITES TECHNIQUES ET PHYSIQUES DANS L'ETUDE DE L'EFFICACITE THERMOMAGNETIQUE DU BISMUTH ET DE SES ALLIAGES AVEC L'ANTIMOINESEMENYUK KK.1982; INZ.-FIZ.Z.; ISSN 0021-0285; BYS; DA. 1982; VOL. 42; NO 1; PP. 145-146Article

ANISOTROPIE DE LA CONDUCTIVITE ELECTRIQUE DES ALLIAGES BISB EN TRACTION UNIAXIALEPOZHERA R YU; TOLUTIS RB.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 11; PP. 3366-3371; BIBL. 9 REF.Article

SURFACE DE FERMI ELECTRONIQUE DANS LES ALLIAGES DE SEMI-METAUX BI1-XSBX(0,23 <OU= X<0,56)BRANDT NB; GERMANN R; GOLYSHEVA GI et al.1982; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 6; PP. 2152-2169; ABS. ENG; BIBL. 41 REF.Article

PERSISTENT METALLIC BEHAVIOR OF THIN BISMUTH WHISKERSOVERCASH DR; RATNAM DA; SKOVE MJ et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 20; PP. 1348-1351; BIBL. 13 REF.Article

ELECTRICAL PROPERTIES OF BI80SB20 ALLOY THIN FILMS, VACUUM-DEPOSITED AT DIFFERENT SUBSTRATE TEMPERATURESDAMODARA DAS V; MEENA N.1981; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1981; VOL. 16; NO 12; PP. 3489-3495; BIBL. 18 REF.Article

PARTICULARITES DE LA PROPAGATION D'HELICONS DANS DES SEMICONDUCTEURS A PLUSIEURS VALLEESTOLUTIS RB.1982; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 297-300; BIBL. 7 REF.Article

COMPOSITION DEPENDENCE OF THE ANISOTROPY OF THE CYCLOTRON MASSES IN N-TYPE SEMICONDUCTING BI1-XSBXFELLMUTH B; KRUEGER H; RUDOLPH R et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 2; PP. 561-567; ABS. GER; BIBL. 20 REF.Article

RELAXATION TIME AND EFFECTIVE MASSES FOR CHARGE CARRIERS IN SEMIMETALLIC BISB ALLOYS VERSUS ALLOY COMPOSITIONBRAUNE W; STRAUBEL U; KUBICKI N et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 2; PP. 587-592; ABS. GER; BIBL. 11 REF.Article

COMPORTEMENT ANORMAL DE LA VARIATION THERMIQUE DU POUVOIR THERMOELECTRIQUE DES TROUS DANS LES ALLIAGES SEMICONDUCTEURS BI1-XSBXRODIONOV NA; IVANOV GA; RED'KO NA et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 7; PP. 2110-2115; BIBL. 8 REF.Article

INFLUENCE OF BI1-X SBX AND SB OVERLAYERS ON THE ANNEALING BEHAVIOUR OF AG FILMSGLOEDE C; MUELLER H; KAISER N et al.1980; KRIST. TECH.; ISSN 0023-4753; DDR; DA. 1980; VOL. 15; NO 8; PP. 965-971; ABS. GER; BIBL. 9 REF.Article

SUR LES OSCILLATIONS QUANTIQUES DE LA FORCE THERMOELECTROMOTRICE (ALPHA 33) LONGITUDINALE DANS LE BISMUTHGRYAZNOV OS; NEMCHINSKIJ VA.1981; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1981; VOL. 34; NO 3; PP. 101-103; BIBL. 3 REF.Article

TRANSITIONS TOPOLOGIQUES ELECTRONIQUES DANS BI0,9SB0,1 DE TYPE P LORS D'UNE TRACTION UNIAXIALEBRANDT NB; GERMANN R; JOVCHIK VA et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 8; PP. 2237-2241; BIBL. 4 REF.Article

IONISATION ET CHOC DE RESONANCE POUR LES ALLIAGES A SEMI-CONDUCTEURS DE BI1--XSBX DANS UN CHAMP MAGNETIQUEBOGDANOV EV; BRANDT NB; MANANKOV VM et al.1982; PIS'MA Z. EKSP. TEOR. FIZ.; ISSN 0370-274X; SUN; DA. 1982; VOL. 35; NO 2; PP. 75-77; BIBL. 7 REF.Article

ROLE OF COMPLEXING AGENTS ON THE ETCHING CHARACTERISTICS OF BI-SB ALLOY SINGLE CRYSTALSBHATT VP; VYAS AR; PANDYA GR et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 48; NO 3; PP. 483-485; BIBL. 5 REF.Article

COMPOSITION DEPENDENCE OF THE MAXIMUM CYCLOTRON MASS M1E IN N-TYPE SEMICONDUCTING BI1-XSBXFELLMUTH B; KRUGER H; RUDOLPH R et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 1; PP. 209-217; ABS. GER; BIBL. 17 REF.Article

ELECTRONIC PECULARITIES IN BI1-XSBX ALLOYS CLOSE TO THE SEMICONDUCTOR - SEMIMETAL TRANSITION AT X EQUIV. A 0.22BRAUNE W; KUBICKI N; STRAUBEL U et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 107; NO 1; PP. K67-K70; BIBL. 5 REF.Article

INFLUENCE D'UNE PRESSION HYDROSTATIQUE SUR LA PARTIE ELECTRONIQUE DE LA SURFACE DE FERMI DU BISMUTH ET DE SES ALLIAGESCHUDINOV SM; MOSHCHALKOV VV; SALTYKOV PA et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 7; PP. 1996-2002; BIBL. 12 REF.Article

UN DIELECTRIQUE EXCITONIQUE DANS DES CHAMPS EXTERIEURSGORBATSEVICH AA; KOPAEV YU V; TUGUSHEV VV et al.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 2; PP. 406-414; BIBL. 19 REF.Article

SEMICONDUCTING BEHAVIOUR IN BI60SB40 ALLOY THIN FILMSDAMODARA DAS V; JAGADEESH MS.1981; VACUUM; ISSN 0042-207X; GBR; DA. 1981; VOL. 31; NO 2; PP. 75-77; BIBL. 12 REF.Article

ETUDE DE LA STRUCTURE DE BANDES D'ALLIAGES SEMICONDUCTEURS BI1-XSBXMIRONOVA GA; SUDAKOVA MV; PONOMAREV YA G et al.1980; ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 78; NO 5; PP. 1830-1851; ABS. ENG; BIBL. 46 REF.Article

ELECTRICAL CONDUCTION IN BI40SB60 ALLOY THIN FILMSDAS VD; MEENA N.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 2; PP. K89-K93; BIBL. 10 REF.Article

QUANTUM OSCILLATIONS OF THERMOMAGNETIC POWER AND MAGNETORESISTANCE IN ANTIMONY-BISMUTH ALLOYSGITSU DV; MUNTYANU FM; ONU MI et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 2; PP. K95-K96; BIBL. 5 REF.Article

AUGER TRANSITIONS IN NARROW-GAP SEMICONDUCTORS WITH LAX BAND STRUCTUREBENESLAVSKII SD; DMITRIEV AV.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 7; PP. 811-814; BIBL. 11 REF.Article

INVESTIGATION OF CHEMICAL MICRO-INHOMOGENEITIES IN BI100XSBX SINGLE CRYSTALSBERGER H; KUHRIG B; OELGART G et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 2; PP. 427-432; ABS. GER; BIBL. 14 REF.Article

Investigation of Bi/Bi1-xSbx multiquantum well structureYI, X.-J; ZHANG, X.-Y; YI LI et al.SPIE proceedings series. 1998, pp 113-116, isbn 0-8194-2726-8Conference Paper

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