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au.\*:("BLACKBURN DL")

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PHOTOVOLTAIC TECHNIQUE FOR MEASURING RESISTIVITY VARIATIONS OF HIGH RESISTIVITY SILICON SLICESBLACKBURN DL.1978; J. RES. NATION. BUR. STAND.; USA; DA. 1978; VOL. 83; NO 3; PP. 265-271; BIBL. 6 REF.Article

AN AUTOMATED PHOTOVOLTAIC SYSTEM FOR THE MEASUREMENT OF RESISTIVITY VARIATIONS IN HIGH-RESISTIVITY CIRCULAR SILICON SLICESBLACKBURN DL.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; 400-52; 39 P.; BIBL. 5 REF.Serial Issue

THEORY AND APPLICATION OF A NONDESTRUCTIVE PHOTOVOLTAIC TECHNIQUE FOR THE MEASUREMENT OF RESISTIVITY VARIATIONS IN CIRCULAR SEMICONDUCTOR SLICESLARRABEE RD; BLACKBURN DL.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1059-1068; BIBL. 18 REF.Article

TRANSIENT THERMAL RESPONSE MEASUREMENTS OF POWER TRANSISTORS. = MESURES RELATIVES A LA REPONSE THERMIQUE TRANSITOIRE DE TRANSITORS DE PUISSANCEBLACKBURN DL; OETTINGER FF.1975; I.E.E.E. TRANS. INDUSTR. ELECTRON. CONTROL INSTRUMENT.; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 134-141; BIBL. 10 REF.Article

POWER MOSFET TEMPERATURE MEASUREMENTSBLACKBURN DL; BERNING DW.1982; PESC '82 RECORD. ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE. 13/1982-06-14/CAMBRIDGE MA; USA; NEW YORK: IEEE; DA. 1982; PP. 400-407; BIBL. 8 REF.Conference Paper

THERMAL CHARACTERIZATION OF POWER TRANSISTORS.OETTINGER FF; BLACKBURN DL; RUBIN S et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 831-838; BIBL. 24 REF.Article

NONDESTRUCTIVE PHOTOVOLTAIC TECHNIQUE FOR THE MEASUREMENT OF RESISTIVITY GRADIENTS IN CIRCULAR SEMICONDUCTOR WAFERSBLACKBURN DL; SCHAFFT HA; SWARTZENDRUBER LJ et al.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1773-1778; BIBL. 13 REF.Serial Issue

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