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WIEDERAUFFINDEN DER DOKUMENTE AUS MICROFICHESPEICHERN = RECHERCHE DE DOCUMENTS DANS LES FICHIERS DE MICROFICHESKUNDORF W; BLUMTRITT H.1974; INFORMATIK; DTSCH.; DA. 1974; VOL. 21; NO 6; PP. 36-41; ABS. ANGL. RUSSE FR.; BIBL. 4 REF.Article

A DIRECT COMPARISON BETWEEN SEM(EBIC) AND HVEM IMAGES OF CRYSTAL DEFECTS IN SEMICONDUCTORS.BLUMTRITT H; GLEICHMANN R.1977; ULTRAMICROSCOPY; NETHERL.; DA. 1977; VOL. 2; NO 4; PP. 405-408; BIBL. 9 REF.Article

INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICONPASEMAN L; BLUMTRITT H; GLEICHMANN R et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 197-209; ABS. GER; BIBL. 21 REF.Article

INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON = INTERPRETATION DES EBIC-KONTRASTES VON VERSETZUNGEN IN SILIZIUM = INTERPRETATION DU CONTRASTE EBIC DE DISLOCATIONS DANS LE SILICIUMPASEMANN L; BLUMTRITT H; GLEICHMANN R et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-03; VOL. 70; NO 1; PP. 197-209; BIBL. 21 REF.Article

ELECTRICAL AND EBIC INVESTIGATIONS OF GAP GRAIN BOUNDARIESZIEGLER E; SIEGEL W; BLUMTRITT H et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 593-605; ABS. GER; BIBL. 14 REF.Article

COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORSBLUMTRITT H; GLEICHMANN R; HEYDENREICH J et al.1979; PHYS. STATUS SOLIDI (A), APPL. PHYS.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 611-620; ABS. GER; BIBL. 14 REF.Article

New morphological types of CuSi precipitates in silicon and their electrical effects = Neue morphologische Typen von CuSi-Ausscheidungen in Silizium und ihre elektrischen EffekteGLEICHMANN, R; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 527-538, issn 0031-8965Article

A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cellsLOTNYK, A; BAUER, J; BREITENSTEIN, O et al.Solar energy materials and solar cells. 2008, Vol 92, Num 10, pp 1236-1240, issn 0927-0248, 5 p.Article

New morphological types of CuSi precipitates in silicon and their electrical effectsGLEICHMANN, R; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 527-538, issn 0031-8965Article

Electrical and EBIC investigation of GaP grain boundaries = Etudes électriques et par EBIC de joints de grains de GaP = Elektrische und EBIC-Untersuchungen von GaP-KorngrenzenZIEGLER, E; SIEGEL, W; BLUMTRITT, H et al.Physica status solidi. A. Applied research. 1982, Vol 72, Num 2, pp 593-605, issn 0031-8965Article

SEP-EBIC investigations of grain boundaries in cadmium tellurideBLUMTRITT, H; PANIN, G. N; YAKIMOV, E. B et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp K3-K6, issn 0031-8965Article

Recombination properties of dislocation slip planesBONDARENKO, I. E; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp 173-177, issn 0031-8965Article

High-resolution investigations of ripple structures formed by femtosecond laser irradiation of siliconSCHADE, M; VARLAMOVA, O; REIF, J et al.Analytical & bioanalytical chemistry (Print). 2010, Vol 396, Num 5, pp 1905-1911, issn 1618-2642, 7 p.Article

Ferroelectric domain structure of (CH3NH3)5Bi2Br11 single crystalsPOLOMSKA, M; SZCZESNIAK, L; JAKUBAS, R et al.Ferroelectrics. Letters section. 1989, Vol 10, Num 4, pp 107-112, issn 0731-5171, 6 p.Article

Scanning electron microscopic investigations of peculiarities of the BaTiO3 ferroelectric domain contrastARISTOV, V. V; KOKHANCHIK, L. S; MEYER, K.-P et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 1, pp 229-236, issn 0031-8965Article

Shape and arrangement of the hexagonal domain and distribution of ferroelectric domains in GASH single crystalsSZCZESNIAK, L; MEYER, K.-P; BLUMTRITT, H et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 93-101, issn 0031-8965Article

Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructuresWOLFSTELLER, A; GEYER, N; NGUYEN-DUC, T.-K et al.Thin solid films. 2010, Vol 518, Num 9, pp 2555-2561, issn 0040-6090, 7 p.Conference Paper

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