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THE SENSITIVITY OF THRESHOLD VOLTAGE OF ION-IMPLANTED MOSFET'S TO SUBSTRATE DOPING AND OXIDE THICKNESS FLUCTUATIONS.BOARD K.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 43; NO 2; PP. 151-159; BIBL. 7 REF.Article

A REVIEW OF BULK UNIPOLAR DIODES AND THEIR APPLICATIONSBOARD K.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 4; PP. 19-22; BIBL. 17 REF.Article

MAXIMUM FREE CHARGE IN TWO-PHASE SURFACE CHARGECOUPLED DEVICES.BOARD K.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 8; PP. 715-720; BIBL. 8 REF.Article

TRANSIENT TEMPERATURE RESPONSE OF SOLID-STATE DEVICES.BOARD K.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 39; NO 1; PP. 75-80; BIBL. 2 REF.Article

THEORY OF SWITCHING IN POLYSILICON-N-P+ SILICON STRUCTURESBOARD K; DARWISH M.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 1; PP. 41-42; BIBL. 7 REF.Article

UNIFIED ANALYSIS OF THE BULK UNIPOLAR DIODEHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 86-89; BIBL. 9 REF.Article

EVALUATION OF SPATIAL DEPENDENCE OF BULK TRAP DENSITY IN MOS DEVICESBOARD K; MOHAMMED DARWISH.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5455-5457; BIBL. 7 REF.Article

LOGIC FUNCTIONS USING INTERACTING TWO-STATE M.O.S. DEVICES.DARWISH MM; BOARD K.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 482-483; BIBL. 3 REF.Article

NON-EQUILIBRIUM RESPONSE OF MOS DEVICES TO A LINEAR VOLTAGE RAMP. I. BULK DISCRETE TRAPS.BOARD K; SIMMONS JG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 859-867; BIBL. 5 REF.Article

A NEW FORM OF TWO-STATE SWITCHING DEVICE, USING A BULK SEMICONDUCTOR BARRIERBOARD K; DARWISH M.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 571-575; BIBL. 9 REF.Article

NONEQUILIBRIUM RESPONSE OF M.O.S. DEVICES TO A LINEAR VOLTAGE RAMP IN THE PRESENCE OF ILLUMINATIONALLMAN PGC; BOARD K.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 117-120; BIBL. 4 REF.Article

New unorthodox semiconductor devicesBOARD, K.Reports on Progress in Physics (Print). 1985, Vol 48, Num 12, pp 1595-1635, issn 0034-4885Article

EXPERIMENTAL OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 161-164; BIBL. 7 REF.Article

THEORY OF SWITCHING IN MISIM STRUCTURESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 165-173; BIBL. 13 REF.Article

THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTSHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 90-96; BIBL. 8 REF.Article

PROPERTIES OF A BULK SEMICONDUCTOR BARRIER WITH MINORITY CARRIER INJECTIONBOARD K; DARWISH M.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 529-535; BIBL. 5 REF.Article

EXACT ANALYSIS OF THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMSBOARD K; DARWISH M.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4546-4547; BIBL. 2 REF.Article

SWITCHING IN M.I.S.M. AND M.I.S.I.M. STRUCTURESDARWISH M; BOARD K.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 15; PP. 577-578; BIBL. 7 REF.Article

EQUILIBRIUM AND NON-EQUILIBRIUM RESPONSE OF AN M.O.S. SYSTEM CONTAINING INTERFACE TRAPS TO A LINEAR VOLTAGE RAMPBOARD K; ALLMAN PGC; SIMMONS JG et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 11-16; BIBL. 5 REF.Article

EXPERIMENTAL RESPONSE OF MOS DEVICES TO A FAST LINEAR VOLTAGE RAMPBOARD K; SIMMONS JG; ALLMAN PGC et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1157-1162; BIBL. 2 REF.Article

C.C.F.E.T., AN ACTIVE CHARGE-COUPLED DEVICE.BOARD K; SHANNON JM; GILL A et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 19; PP. 452-453; BIBL. 2 REF.Article

Double delta-doped FETs in GaAsBOARD, K; NUTT, H. C.Electronics Letters. 1992, Vol 28, Num 5, pp 469-471, issn 0013-5194Article

Lateral resurfed COMFETDARWISH, M; BOARD, K.Electronics Letters. 1984, Vol 20, Num 12, pp 519-520, issn 0013-5194Article

REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM ARSENIDEWOOD CE; EASTMAN LF; BOARD K et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 15; PP. 676-677; BIBL. 3 REF.Article

General large-signal charge-control equations for the MOSFET drain and source current under nonquasistatic conditionsCHAI, K.-W; BOARD, K.IEE proceedings. Circuits, devices and systems. 1998, Vol 145, Num 4, pp 236-242, issn 1350-2409Article

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