A REVIEW OF BULK UNIPOLAR DIODES AND THEIR APPLICATIONSBOARD K.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 4; PP. 19-22; BIBL. 17 REF.Article

UNIFIED ANALYSIS OF THE BULK UNIPOLAR DIODEHABIB SED; BOARD K.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 86-89; BIBL. 9 REF.Article

EVALUATION OF SPATIAL DEPENDENCE OF BULK TRAP DENSITY IN MOS DEVICESBOARD K; MOHAMMED DARWISH.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5455-5457; BIBL. 7 REF.Article

LOGIC FUNCTIONS USING INTERACTING TWO-STATE M.O.S. DEVICES.DARWISH MM; BOARD K.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 482-483; BIBL. 3 REF.Article

NON-EQUILIBRIUM RESPONSE OF MOS DEVICES TO A LINEAR VOLTAGE RAMP. I. BULK DISCRETE TRAPS.BOARD K; SIMMONS JG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 859-867; BIBL. 5 REF.Article

A NEW FORM OF TWO-STATE SWITCHING DEVICE, USING A BULK SEMICONDUCTOR BARRIERBOARD K; DARWISH M.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 571-575; BIBL. 9 REF.Article

NONEQUILIBRIUM RESPONSE OF M.O.S. DEVICES TO A LINEAR VOLTAGE RAMP IN THE PRESENCE OF ILLUMINATIONALLMAN PGC; BOARD K.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 117-120; BIBL. 4 REF.Article

New unorthodox semiconductor devicesBOARD, K.Reports on Progress in Physics (Print). 1985, Vol 48, Num 12, pp 1595-1635, issn 0034-4885Article

EXPERIMENTAL OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 161-164; BIBL. 7 REF.Article

THEORY OF SWITCHING IN MISIM STRUCTURESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 165-173; BIBL. 13 REF.Article

EQUILIBRIUM AND NON-EQUILIBRIUM RESPONSE OF AN M.O.S. SYSTEM CONTAINING INTERFACE TRAPS TO A LINEAR VOLTAGE RAMPBOARD K; ALLMAN PGC; SIMMONS JG et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 11-16; BIBL. 5 REF.Article

EXPERIMENTAL RESPONSE OF MOS DEVICES TO A FAST LINEAR VOLTAGE RAMPBOARD K; SIMMONS JG; ALLMAN PGC et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1157-1162; BIBL. 2 REF.Article

General large-signal charge-control equations for the MOSFET drain and source current under nonquasistatic conditionsCHAI, K.-W; BOARD, K.IEE proceedings. Circuits, devices and systems. 1998, Vol 145, Num 4, pp 236-242, issn 1350-2409Article

New latch-up-free IGBT with low on-resistanceBOARD, K; HU, Z.-R.Electronics Letters. 1993, Vol 29, Num 18, pp 1664-1666, issn 0013-5194Article

Theory of switching in polysilicon n-p⁺ structuresDARWISH, M; BOARD, K.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 775-783, issn 0038-1101Article

Phonetics and Transcription. Problem Areas for Dutch-Speaking University Students of EnglishMEUS, V; BOARD, K.Studia Germanica Gandensia Gent. 1982, Vol 22, pp 53-72Article

Bulk unipolar diodes in the limit of large p-regionAL-BUSTANI, A; BOARD, K.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 1, pp 17-21, issn 0143-7100Article

Analysis and characteristics of bulk-inverted narrow-gate trench IGBTsBOARD, K; HU, Z. R.Microelectronics journal. 1995, Vol 26, Num 6, pp 535-542, issn 0959-8324Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

Gate controlled bulk-barrier mechanism in an MOS power transistorMCCOWEN, A; BOARD, K.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 6, pp 168-170, issn 0143-7100, 1Article

LDMOS transistors with implanted and deposited surface layersBOARD, K; DARWISH, M.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 4, pp 177-180, issn 0143-7100Article

ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAASSTALL R; WOOD CEC; BOARD K et al.1979; ELECTRON-LETTERS; GBR; DA. 1979; VOL. 15; NO 24; PP. 800-801; BIBL. 2 REF.Article

CHARGE COUPLED F.E.T. DEVICES (C.C.F.E.T.).SHANNON JM; BOARD K; BROTHERTON SD et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 320-323; BIBL. 2 REF.Conference Paper

BALLISTIC ELECTRON MOTION IN GAAS AT ROOM TEMPERATUREEASTMAN LF; STALL R; WOODARD D et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 524-525; BIBL. 7 REF.Article

A STUDY OF GE/GAAS INTERFACES GROWN BY MOLECULAR BEAM EPITAXYSTALL RA; WOOD CEC; BOARD K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4062-4069; BIBL. 26 REF.Article