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DEFORMATION DU RESEAU CRISTALLIN DE SI PROVOQUEE PAR BOMBARDEMENT AVEC LES IONS B ET OSMIRNOV IN.1975; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1975; VOL. 225; NO 3; PP. 621-623; BIBL. 9 REF.Article

EFFECT OF IRRADIATION TEMPERATURE ON SI AMORPHIZATION PROCESS.BARANOVA EC; GUSEV VM; MARTYNENKO YV et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 25; NO 3; PP. 157-162; BIBL. 16 REF.Article

LINE IDENTIFICATIONS IN THE BEAM-FOIL SPECTRUM OF BORON.BERRY HG; SUBTIL JL.1974; PHYS. SCRIPTA; SUEDE; DA. 1974; VOL. 9; NO 4; PP. 217-220; BIBL. 18 REF.Article

A METHOD FOR MEASURING STOPPING POWERS OF CHANNELED IONS BORON IN SIMARCOVICH A; BAHIR G; BERNSTEIN T et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 2; PP. 65-70; BIBL. 10 REF.Article

EQUILIBRIUM CHARGE DISTRIBUTIONS OF BORON IN CARBONBICKEL WS; OONA H; SMITH WS et al.1972; PHYS. SCRIPTA; SUEDE; DA. 1972; VOL. 6; NO 1; PP. 71-72; BIBL. 8 REF.Serial Issue

ATOMES INTERSTITIELS DE SILICIUM DANS LE SILICIUMSMIRNOV IN; KONYSHEV VV; ALKSNIS TG et al.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 8; PP. 1393-1396; BIBL. 17 REF.Article

ETUDE DE LA VIE MOYENNE DES NIVEAUX 2P, 3P ET 4P DU BORE HYDROGENOIDE.TO KX; DROUIN R.1976; CANAD. J. SPECTROSC.; CANADA; DA. 1976; VOL. 21; NO 1; PP. 21-24; ABS. ANGL.; BIBL. 19 REF.Article

SPECTROSCOPIE DE B IV DANS L'ULTRAVIOLET LOINTAIN.TO KX; KNYSTAUTAS EJ; DROUIN R et al.1974; CANAD. J. SPECTROSC.; CANADA; DA. 1974; VOL. 19; NO 3; PP. 72-75; ABS. ANGL.; BIBL. 24 REF.Article

VOLUME EXPANSION OF ION-IMPLANTED DIAMONDMABY EW; MAGEE CW; MOREWOOD JH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 157-158; BIBL. 8 REF.Article

THE MECHANISMS OF IMPURITY REDISTRIBUTION ON LASER-ANNEALING OF ION-IMPLANTED SEMICONDUCTORSDVURECHENSKY AV; KACHURIN GA; ANTONENKO AK et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 3-4; PP. 179-181; BIBL. 7 REF.Article

ELECTRIC QUADRUPOLE TRANSITIONS IN LI I, BE II, B III.SANKAR SENGUPTA.1975; J. QUANT. SPECTROSC. RAD. TRANSFER; G.B.; DA. 1975; VOL. 15; NO 2; PP. 159-162; BIBL. 8 REF.Article

ELECTRONIC STATES OF B+ PRODUCED BY ELECTRON BOMBARDMENT OF BORON TRIHALIDES: SOME ION-MOLECULE REACTIONS OF B+.KUO CHIN LIN; COTTER RJ; KOSKI WS et al.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 9; PP. 3412-3416; BIBL. 16 REF.Article

THE SPECTRUM AND TERM SYSTEM OF HELIUM-LIKE BORON, B. IV.EIDELSBERG M.1974; J. PHYS. B; G.B.; DA. 1974; VOL. 7; NO 12; PP. 1476-1485; BIBL. 25 REF.Article

CONTRIBUTION TO ION IMPLANTATION THROUGH A NARROW SLIT AT HIGHER ENERGIESLUTSCH AGK; RUNGE H.1983; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1983; VOL. 14; NO 1; PP. 15-20; BIBL. 4 REF.Article

PRIMARY DEFECTS IN LOW-FLUENCE ION-IMPLANTED SILICONWANG KL.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 48-50; BIBL. 11 REF.Article

OPTICAL OSCILLATOR STRENGTHS FOR BE II AND B IIIGANAS PS.1979; Z. PHYS. A; DEU; DA. 1979; VOL. 292; NO 2; PP. 107-108; BIBL. 9 REF.Article

THE INVESTIGATION OF RADIATION DAMAGE BY ELECTRON BEAM ABSORPTION MEASUREMENTS.FRITZSCHE CR; ROTHEMUND W.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 4; PP. 339-343; BIBL. 9 REF.Article

REACTION OF B+ WITH D2.KUO CHIN LIN; WATKINS HP; COTTER RJ et al.1974; J. CHEM. PHYS.; U.S.A.; DA. 1974; VOL. 60; NO 12; PP. 5134-5135; BIBL. 5 REF.Article

VOIDS IN ION-IMPLANTED SILICON.ROMANOV SI; SMIRNOV LS.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 37; NO 1-2; PP. 121-126; BIBL. 43 REF.Article

MEAN-LIFE MEASUREMENTS FOR LEVELS IN B I-B IV.KERNAHAN JA; PINNINGTON EH; LIVINGSTON AE et al.1975; PHYS. SCRIPTA; SUEDE; DA. 1975; VOL. 12; NO 6; PP. 319-322; BIBL. 38 REF.Article

RADIATION DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS. I: NUCLEAR AND ELECTRONIC ENERGY DEPOSITIONFISCHER H; GOETZ G; KARGE H et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 249-256; ABS. GER; BIBL. 16 REF.Article

REDUCTION OF SURFACE HYDROGEN ON ULTRA COLD NEUTRON CONTAINER MATERIALS BY ION BOMBARDMENTBUGEAT JP; MAMPE W.1979; Z. PHYS. B; ISSN 0340-224X; DEU; DA. 1979; VOL. 35; NO 3; PP. 273-276; BIBL. 12 REF.Article

DIFFRACTION DES RAYONS X PAR LES CRISTAUX DE SILICIUM IRRADIES PAR IONS BOREBATURIN VE; KOVAL'CHUK MV; KOV'EV EH K et al.1977; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1977; VOL. 22; NO 1; PP. 144-148; BIBL. 10 REF.Article

SCATTERING BETWEEN HG ATOMS AND LIGHT ATOMIC PROJECTILES OF KEV ENERGIESVAN WIJNGAARDEN A; BAYLIS WE.1973; PHYS. REV., A; U.S.A.; DA. 1973; VOL. 7; NO 3; PP. 937-942; BIBL. 18 REF.Serial Issue

AB INITIO POTENTIAL ENERGY SURFACES FOR BH2+HIRST DM.1983; CHEMICAL PHYSICS LETTERS; ISSN 0009-2614; NLD; DA. 1983; VOL. 95; NO 6; PP. 591-595; BIBL. 9 REF.Article

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