THE EFFECT OF HOLE VERSUS ELECTRON PHOTOCURRENT ON MICROWAVE-OPTICAL INTERACTIONS IN IMPATT OSCILLATORSVYAS HP; GUTMANN RJ; BORREGO JM et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 232-234; BIBL. 10 REF.Article

THE GROWTH OF TIN OXIDE FILMS AT ROOM TEMPERATUREGHANDHI SK; SIVIY R; BORREGO JM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 12; PP. 833-835; BIBL. 7 REF.Article

HIGH E-FIELD MICROWAVE PROPERTIES OF BULK AMORPHOUS SEMICONDUCTORS.STAIGER EH; GUTMANN RJ; BORREGO JM et al.1975; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1975; VOL. 17; NO 2; PP. 273-280; BIBL. 12 REF.Article

ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODESASHOK S; BORREGO JM; GUTMANN RJ et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 621-631; BIBL. 44 REF.Article

A NOTE ON THE EVALUATION OF SCHOTTKY DIODE PARAMETERS IN THE PRESENCE OF AN INTERFACIAL LAYER.ASHOK S; BORREGO JM; GUTMANN RJ et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 332-333; BIBL. 10 REF.Article

EFFECT OF CHROMIUM THICKNESS ON AUCR-NSI SCHOTTKY AND AUCR-N-P⁺SI BARITT DIODES. = EFFET DE L'EPAISSEUR DE CHROME SUR DES DIODES DE SCHOTTKY A AUCR-NSI ET BARITT A AUCR-N-P⁺SINARAIN J; BORREGO JM; GUTMANN RJ et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 178-179; BIBL. 4 REF.Article

EFFECT OF LEAKAGE CURRENT ON THE POWER OUTPUT OF S BAND TRAPATT OSCILLATORS. = EFFET DU COURANT DE FUITE SUR LA SORTIE EN PUISSANCE D'OSCILLATEURS TRAPATT EN BANDE SBORREGO JM; GUTMANN RJ; GEIPEL HJ et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 14; PP. 277-278; BIBL. 9 REF.Article

PHOTOCURRENT EFFECTS ON NOISE IN SILICON IMPATT OSCILLATORSPITNER PM; GUTMANN RJ; BORREGO JM et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 4; PP. 149-152; BIBL. 12 REF.Article

THERMAL STABILIZATION OF THIN-FILM GAAS SOLAR CELLS WITH GRAIN-BOUNDARY-EDGE PASSIVATIONGHANDHI SK; SHASTRY SK; BORREGO JM et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 1; PP. 25-27; BIBL. 7 REF.Article

CURRENT TRANSPORT IN GAAS SCHOTTKY BARRIER DIODES SUBJECT TO HIGH NEUTRON FLUENCEASHOK S; BORREGO JM; GUTMANN RJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1076-1084; BIBL. 21 REF.Article

GAMMA IRRADIATION INSENSITIVITY OF GAAS SCHOTTKY DIODES.ASHOK S; BORREGO JM; GUTMANN RJ et al.1978; I.E.E.E. TRANS. NUCL. SCI.; U.S.A.; DA. 1978; VOL. 25; NO 2; PP. 999-1000; BIBL. 6 REF.Article

EXTENSION OF GUMMEL'S CHARGE CONTROL RELATION.BORREGO JM; TEMPLE VAK; ADLER MS et al.1977; SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 5; PP. 441-442; BIBL. 1 REF.Article

LEAKAGE CURRENT ENHANCEMENT IN IMPATT OSCILLATORS BY PHOTOEXCITATION.VYAS HP; GUTTMAR RJ; BORREGO JM et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 7; PP. 189-190; BIBL. 10 REF.Article

RICHARDSON CONSTANT OF AL- AND GAAS SCHOTTKY BARRIER DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 3; PP. 169-172; BIBL. 10 REF.Article

INTERFACE STATE DENSITY IN AN-N-GA AS SCHOTTKY DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 125-132; BIBL. 14 REF.Article

THIN-FILM GAAS SOLAR CELLS WITH GRAIN-BOUNDARY EDGE PASSIVATIONGHANDHI SK; BORREGO JM; REEP D et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 699-701; BIBL. 9 REF.Article

EFFECT OF NEUTRON AND GAMMA IRRADIATION ON THE LOW-FREQUENCY NOISE IN GAAS M.E.S.F.E.T.S.MOGHE SB; GUTMANN RJ; CHUDZICKI MJ et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 19; PP. 637-639; BIBL. 8 REF.Article

ION BEAM DAMAGE EFFECTS DURING THE LOW ENERGY CLEANING OF GAASGHANDHI SK; KWAN P; BHAT KN et al.1982; ELECTRON DEVICE LETT.; USA; DA. 1982; VOL. 3; NO 2; PP. 48-50; BIBL. 6 REF.Article

AVALANCHE DIODE STRUCTURES SUITABLE FOR MICROWAVE-OPTICAL INTERACTIONSSCHWEIGHART A; VYAS HP; BORREGO JM et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1119-1121; BIBL. 4 REF.Article

ION-CLEANING DAMAGE IN (100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODESKWAN P; BHAT KN; BORREGO JM et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 125-129; BIBL. 11 REF.Article

DIFFUSION LENGTH MEASUREMENTS IN SCHOTTKY BARRIER GAAS SOLAR CELLSLENDER RJ; TIWARI S; BORREGO JM et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 213-214; BIBL. 7 REF.Article

GRAIN-BOUNDARY EDGE PASSIVATION OF GAAS FILMS BY SELECTIVE ANODIZATIONPANDE KP; HSU YS; BORREGO JM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 8; PP. 717-719; BIBL. 12 REF.Article

DETERMINATION OF GAAS M.E.S.F.E.T. EQUIVALENT-CIRCUIT PARAMETERS FROM I/V AND 1 MHZ MEASUREMENTS.BORREGO JM; GUTMANN RJ; CHUDZICKI M et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 24; PP. 756-757; BIBL. 4 REF.Article

SPECTRAL RESPONSE OF THIN FILM POLY-GAAS SOLAR CELLSKEENEY RP; SHASTRY SK; REEP DH et al.1982; ELECTROCHEMICAL SOCIETY. SPRING MEETING. GENERAL SESSION/1982-05-09/MONTREAL PQ; USA; PENNINGTON: ELECTROCHEMICAL SOCIETY; DA. 1982; PP. 90; BIBL. 5 REF.Conference Paper

DEVICE QUALITY POLYCRYSTALLINE GALLIUM ARSENIDE ON GERMANIUM/MOLYBDENUM SUBSTRATESPANDE K; REEP D; SRIVASTAVA A et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 300-304; BIBL. 9 REF.Article