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UNTERSUCHUNGEN ZUM ANFANGSSTADIUM DES ROSTVORGANGS AN STAEHLEN MIT STREIFENDER ELEKTRONENBEUGUNG = RECHERCHES SUR LE STADE INITIAL DE LA FORMATION DE LA ROUILLE SUR DES ACIERS A L'AIDE DE LA DIFFRACTION D'ELECTRONS SOUS INCIDENCE RASANTEENGELHARDT R; BOUDRIOT H.1972; NEUE HUETTE; DTSCH.; DA. 1972; VOL. 17; NO 6; PP. 366-369; BIBL. 10 REF.Serial Issue

DIE UNTERSUCHUNG DES ADSORPTIONSVERHALTENS MIT HILFE DER ELEKTRONENMIKROSKOPISCHEN AUTORADIOGRAPHIE. = ETUDE D'ADSORPTION PAR AUTORADIOGRAPHIE AVEC MICROSCOPIE ELECTRONIQUEBOUDRIOT H; MATTHE P; SCHNEIDER HA et al.1977; FREIBERGER FORSCH.-H., A; DTSCH.; DA. 1977; NO 564; PP. 25-30; ABS. ANGL. RUSSE; BIBL. 8 REF.Article

Influence of dipole scattering on the free carrier absorptionBOUDRIOT, H; SCHNEIDER, H. A.Physica status solidi. B. Basic research. 1989, Vol 154, Num 2, pp K175-K178, issn 0370-1972Article

OPTICAL PROPERTIES OF SINGLE-CRYSTALLINE ZNSIP2 FROM ELECTRON ENERGY LOSS MEASUREMENTS BETWEEN 3 AND 40 EVBOUDRIOT H; GRUNDLER R; KUBIER B et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. K129-K132; BIBL. 8 REF.Article

Aufbau einer Anlage zur Energieverlustanalyse schneller Elektronen = Construction d'un appareil d'analyse des pertes d'énergie d'électrons rapides = Construction of a device for energy loss analysis of fast electronsKUBIER, B; BOUDRIOT, H.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 245-250, issn 0014-4924Article

Anlage zur Bestimmung von Verteilungsprofilen der Ladungsträgerkonzentration in AIII-BV-Verbindungshalbleitern speziell in GaAs = Construction of an equipment for determination of profiles of the carrier distribution in AIII-BV semiconductors, especially in GaAsKALLENOWSKY, T; BOUDRIOT, H; SCHNEIDER, H. A et al.Experimentelle Technik der Physik. 1991, Vol 39, Num 2, pp 139-144, issn 0014-4924Article

Compensation in GaAs : Si in correlation to As pressure during the crystal growthBOUDRIOT, H; SIEGEL, W; DEUS, K et al.Solid state communications. 1994, Vol 89, Num 10, pp 889-891, issn 0038-1098Article

PLASMON DATA, DIELECTRIC FUNCTION, AND OPTICAL CONSTANTS OF CDGEP2 FROM ELECTRON ENERGY LOSS MEASUREMENTS BETWEEN 4.5 AND 35 EVKUBIER B; BOUDRIOT H; DEUS K et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 106; NO 2; PP. K103-K106; BIBL. 5 REF.Article

Volume plasmon dispersion of polycrystalline GaP and InPSTÖCKERT, T; GRÜNDLER, R; BOUDRIOT, H et al.Physica status solidi. B. Basic research. 1984, Vol 123, Num 2, pp K161-K164, issn 0370-1972Article

Influence of film structure on the electron energy loss spectra of GaAs thin filmsBOUDRIOT, H; KUBIER, B; DEUS, K et al.Crystal research and technology (1979). 1983, Vol 18, Num 8, pp 1035-1044, issn 0232-1300Article

Influence of the structure of InP thin films on electron energy loss spectraGRÜNDLER, R; BOUDRIOT, H; DEUS, K et al.Crystal research and technology (1979). 1989, Vol 24, Num 2, pp 149-152, issn 0232-1300, 4 p.Article

Microinhomogeneities of charge carrier concentration in GaAsKALLENOWSKY, T; KOI, H; BOUDRIOT, H et al.Crystal research and technology (1979). 1991, Vol 26, Num 8, pp 987-992, issn 0232-1300Article

Volume plasmon dispersion of polycrystalline films of the ternary semiconductors ZnSnAs2 and ZnSiAs2GRUNDLER, R; STOCKER, T; BOUDRIOT, H et al.Physica status solidi. B. Basic research. 1987, Vol 140, Num 1, pp K19-K22, issn 0370-1972Article

Contribution to the Si doping of Bridgeman GaAsSIEGEL, W; BOUDRIOT, H; KOI, H et al.Crystal research and technology (1979). 1989, Vol 24, Num 10, pp 999-1002, issn 0232-1300Article

Optical properties of ZnSiAs2 single crystalline thin films from electron energy loss measurementsBOUDRIOT, H; DEUS, K; GRÜNDLER, R et al.Physica status solidi. B. Basic research. 1987, Vol 143, Num 2, pp K125-K130, issn 0370-1972Article

Electron energy loss measurements on CdSnP2: plasmon data, dielectric function, band structure dataBOUDRIOT, H; GRÜNDLER, R; DEUS, K et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 2, pp K149-K154, issn 0370-1972Article

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