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Results 1 to 25 of 810

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TRANSFER OF EXCITONS BOUND TO NITROGEN IN GAAS1-X PX: NCOLLET JH; KASH JA; WOLFORD DJ et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 7; PP. 1283-1290; BIBL. 23 REF.Article

RECOMBINAISON RADIATIVE DES EXCITONS DE MOTT LOCALISES DANS UN FORT CHAMP MAGNETIQUEKHARCHENKO VA.1982; Z. EKSP. TEOR. FIZ.; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 5; PP. 1971-1977; ABS. ENG; BIBL. 5 REF.Article

EXCITED STATES OF BOUND EXCITONS IN ZNOSCHREY H; KLINGSHIRN C.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 5; PP. 485-488; BIBL. 17 REF.Article

PIEZOEMISSION STUDY OF I1 AND I2-TYPE BOUND EXCITONS IN CDS.GORDE O; BLASCHKE M; KLOHS KH et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 1; PP. 267-280; ABS. ALLEM.; BIBL. 15 REF.Article

ACCURATE BINDING ENERGIES OF NEUTRAL BOUND EXCITONSSTEBE B; MUNSCHY G.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 7; PP. 557-560; BIBL. 20 REF.Article

ON THE VALLEY-ORBIT SPLITTING OF MULTIPLE BOUND EXCITON STATES IN SILICONWUNSCHE HJ.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 92; NO 1; PP. K57-K60; BIBL. 5 REF.Article

BOUND EXCITON IN LOCAL DENSITY APPROXIMATIONWUENSCHE HJ; HENNEBERGER K.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 1; PP. 331-337; ABS. GER; BIBL. 16 REF.Article

DOUBLE ACCEPTOR BOUND EXCITON IN GENAKATA H; YODO T; OTSUKA E et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 2; PP. 55-57; BIBL. 18 REF.Article

POLARON PROPERTIES OF EXCITON COMPLEXESBEDNAREK S; ADAMOWSKI J; SUFFCZYNSKI M et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 30; PP. 4405-4414; BIBL. 16 REF.Article

STRUCTURE FINE DES NIVEAUX DE L'EXCITON LIE ET DES COMPLEXES A PLUSIEURS EXCITONS DANS LE GERMANIUMPIKUS GE; AVERKIEV NS.1980; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1980; VOL. 32; NO 5; PP. 352-356; BIBL. 6 REF.Article

BOUND MULTIEXCITON LUMINESCENCE IN LITHIUM-DOPED SILICONOHNISHI KI; NAKAYAMA H; NISHINO T et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 49; NO 3; PP. 1078-1082; BIBL. 18 REF.Article

ISOELECTRONIC BOUND EXCITONS IN SILICON: THE ROLE OF DEEP ACCEPTORSTHEWALT MLW; ZIEMELIS UO; PARSONS RR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3655-3658; BIBL. 10 REF.Article

EIN EINFACHES MODELL FUER EIN AN EINER ISOELEKTRONISCHEN STOERSTELLE SCHWACH GEBUNDENES EXZITON = UN MODELE SIMPLE POUR UN EXCITON FAIBLEMENT LIE A UNE IMPURETE ISOELECTRONIQUEGEISTLINGER H; WELLER W.1981; ANN. PHYS.; ISSN 0003-3804; DDR; DA. 1981; VOL. 38; NO 4-5; PP. 375-380; ABS. ENG; BIBL. 6 REF.Article

THE EFFECT OF GAMMA IRRADIATION AND FORWARD BIAS ON THE 76 K ELECTROLUMINESCENCE SPECTRUM OF GAP:ZN, OBARNES CE.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 377-389; BIBL. 28 REF.Article

COMMENTS ON "EXPERIMENTAL EVIDENCE AGAINST THE SHELL MODEL OF BOUND MULTIEXCITON IN SILICON".THEWALT MLW.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 8; PP. 513-517; BIBL. 10 REF.Article

FINE STRUCTURE IN THE BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINIUM-DOPED SILICON.LIGHTOWLERS EC; HENRY MO.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 9; PP. L247-L250; BIBL. 16 REF.Article

PROPERTIES OF AN EXCITON BOUND IN AN ASYMMETRIC ELECTRIC DIPOLE FIELD.HAGSTON WE; SUTHERLAND HH.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 1; PP. K53-K56; BIBL. 3 REF.Article

DESTABILIZATION OF A SELF-TRAPPED EXCITON IN A QUASI-ONE-DIMENSIONAL SEMICONDUCTOR: MG (PT(CN)4). H2O WITH HYDROSTATIC PRESSUREROSSLER U; YERSIN H.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3187-3191; BIBL. 19 REF.Article

PHOTOLUMINESCENCE LIFETIME, ABSORPTION AND EXCITATION SPECTROSCOPY MEASUREMENTS ON ISOELECTRONIC BOUND EXCITONS IN BERYLLIUM-DOPED SILICONTHEWALT MLW; WATKINS SP; ZIEMELIS UO et al.1982; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 5; PP. 573-577; BIBL. 10 REF.Article

THEORY OF FINE-STRUCTURE SPLITTINGS FOR DONOR-BOUND EXCITONS IN INDIRECT MATERIALSUIA CHUN CHANG; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 3945-3962; BIBL. 38 REF.Article

THEORY OF MULTIEXCITON COMPLEXES BOUND TO DONORS IN MULTIVALLEY SEMICONDUCTORSYIA CHUNG CHANG; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 3963-3974; BIBL. 22 REF.Article

OBSERVATION OF BOUND EXCITON AND DISTANT PAIR RESONANCES IN AMORPHOUS PHOSPHORUSDEPINNA S; CAVENETT BC.1981; SOLID STATES COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 8; PP. 813-818; BIBL. 22 REF.Article

BOUND EXCITON RECOMBINATION IN BERYLLIUM-DOPED SILICONHENRY MO; LIGHTOWLERS EC; KILLORAN N et al.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 10; PP. L255-L261; BIBL. 15 REF.Article

INFLUENCE DES DEFORMATIONS ET DU CHAMP MAGNETIQUE SUR LE SPECTRE DE L'EXCITON LIE DANS LE CRISTAL CU2O:CDKREJNGOL'D FI; TSURIKOV VI.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 11; PP. 3275-3281; BIBL. 9 REF.Article

LUMINESCENCE OF BOUND EXCITON AND BOUND MULTIEXCITON COMPLEXES IN SI: LILYON SA; SMITH DL; MCGILL TC et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 4; PP. 317-320; BIBL. 12 REF.Article

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