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High performance GaN HEMTs for mmWave applicationsBOUTROS, K. S; REGAN, M; ROWELL, P et al.Proceedings - Electrochemical Society. 2004, pp 454-458, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

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Yellow photoluminescence in MOCVD-grown n-type GaNSCHUBERT, E. F; GRIESHABER, W; BOUTROS, K. S et al.SPIE proceedings series. 1998, pp 59-68, isbn 0-8194-2718-7Conference Paper