au.\*:("BRACHT, Hartmut")
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On the diffusion and activation of n-type dopants in GeVANHELLEMONT, Jan; SIMOEN, Eddy.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 642-655, issn 1369-8001, 14 p.Article
Thin films of silica imbedded silicon and germanium quantum dots by solution processingOLIVA, Brittany L; BARRON, Andrew R.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 713-721, issn 1369-8001, 9 p.Article
Overview and status of bottom-up silicon nanowire electronicsFASOLI, A; MILNE, W. I.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 601-614, issn 1369-8001, 14 p.Article
The diffusivity of the vacancy in silicon: Is it fast or slow?VORONKOV, V. V; FALSTER, R.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 697-702, issn 1369-8001, 6 p.Article
Role of point defects on B diffusion in GeSCAPELLATO, G. G; BRUNO, E; PRIOLO, F et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 656-668, issn 1369-8001, 13 p.Article
p-type conduction in ion-implanted amorphized GeROMANO, L; IMPELLIZZERI, G; GRIMALDI, M. G et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 703-706, issn 1369-8001, 4 p.Article
Defects annealing in 4H―SiC epitaxial layer probed by low temperature photoluminescenceLITRICO, G; ZIMBONE, M; MUSUMECI, P et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 740-743, issn 1369-8001, 4 p.Article
Atomic transport in germanium and the mechanism of arsenic diffusionBRACHT, Hartmut; BROTZMANN, Sergej.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 471-476, issn 1369-8001, 6 p.Conference Paper
Magnetism in melt grown dilute magnetic semiconductor Ge1―xMnx from electron densitySHEEBA, R. A. J. R; SARAVANAN, R; BERCHMANS, L. John et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 731-739, issn 1369-8001, 9 p.Article
Defect reactions in gallium antimonide studied by zinc and self-diffusionSUNDER, Kirsten; BRACHT, Hartmut.Physica. B, Condensed matter. 2007, Vol 401-02, pp 262-265, issn 0921-4526, 4 p.Conference Paper
Challenges and opportunities in advanced Ge pMOSFETsSIMOEN, E; MITARD, J; CAYMAX, M et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 588-600, issn 1369-8001, 13 p.Article
