A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decappingGOLETTI, C; RESCH-ESSER, U; FOELLER, J et al.Surface science. 1996, Vol 352-54, pp 771-775, issn 0039-6028Conference Paper

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surfaceMAKIMOTO, T; BRAR, B; KROEMER, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 883-886, issn 0022-0248, 2Conference Paper

On the interface structure in InAs/AlSb quantum wells grown by molecular-beam epitaxyBOLOGNESI, C. R; SELA, I; IBBETSON, J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 868-871, issn 1071-1023Conference Paper

Monolithic integration of InP-based transistors on Si substrates using MBELIU, W. K; LUBYSHEV, D; HOKE, W. E et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1979-1983, issn 0022-0248, 5 p.Conference Paper

High performance GaN HEMTs for mmWave applicationsBOUTROS, K. S; REGAN, M; ROWELL, P et al.Proceedings - Electrochemical Society. 2004, pp 454-458, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Deep submicron InP DHBT technology with electroplated emitter and base contactsURTEAGA, M; ROWELL, P; PIERSON, R et al.DRC : Device research conference. 2004, pp 239-240, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Infrared spectroscopy of lateral-density-modulated 2DES in InAs/AlSb quantum wellsSUNDARAM, M; ALLEN, S. J; NGUYEN, C et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1293-1295, issn 0038-1101Conference Paper

Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices : an optical studySPITZER, J; FUCHS, H. D; ETCHEGOIN, P et al.Applied physics letters. 1993, Vol 62, Num 18, pp 2274-2276, issn 0003-6951Article

Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm g_m and 490 GHz f_THA, Wonill; SHINOHARA, K; BRAR, B et al.IEEE electron device letters. 2008, Vol 29, Num 5, pp 419-421, issn 0741-3106, 3 p.Article

Transistor and circuit design for 100-200 GHz ICsRODWELL, M; GRIFFITH, Z; PIERSON, R et al.IEEE Compound Semiconductor Integrated Circuit Symposium. 2004, pp 207-210, isbn 0-7803-8616-7, 1Vol, 4 p.Conference Paper

Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wellsKADOW, C; LIN, H.-K; DAHLSTRÖM, M et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 543-546, issn 0022-0248, 4 p.Conference Paper

Impact ionization in high performance AlGaN/GaN HEMTsBRAR, B; BOUTROS, K; DEWAMES, R. E et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 487-491, isbn 0-7803-7478-9, 5 p.Conference Paper

InP HBTs: Present status and future trendsBRAR, B; LI, J. C; PIERSON, R. L et al.Bipolar / BiCMOS circuits and technology meeting. 2002, pp 155-161, isbn 0-7803-7561-0, 7 p.Conference Paper

Spin phenomena in intersubband transitionsGAUER, C; WIXFORTH, A; KOTTHAUS, J. P et al.Superlattices and microstructures. 1996, Vol 19, Num 3, pp 241-249, issn 0749-6036Article

Photoinduced absorption within the valence Γ- and the conduction L-subband manifolds in undoped GaSb/AlSb superlatticesABRAMOVICH, Y; POPLAWSKI, J; EHRENFREUND, E et al.Superlattices and microstructures. 1994, Vol 15, Num 4, pp 489-493, issn 0749-6036Article

Quasi-direct narrow GaSb-A1Sb (100) quantum wellsBRAR, B; KROEMER, H; ENGLISH, J et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 752-754, issn 0022-0248Conference Paper

Lg = 100 nm InAs PHEMTs on InP substrate with record high frequency responseKIM, D.-H; CHEN, P; KIM, T.-W et al.Electronics letters. 2012, Vol 48, Num 21, pp 1352-1353, issn 0013-5194, 2 p.Article

Degradation in InAs―AlSb HEMTs Under Hot-Carrier StressDASGUPTA, Sandeepan; XIAO SHEN; SCHRIMPF, Ronald D et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 5, pp 1499-1507, issn 0018-9383, 9 p.Article

The pharmacology of Bimatoprost (Lumigan⁾WOODWARD, D. F; KRAUSS, A. H.-P; CHEN, R et al.Survey of ophthalmology. 2001, Vol 45, pp S337-S345, issn 0039-6257, SUP4Article

Post-translational processing of human procorticotrophin-releasing factor in transfected mouse neuroblastoma and Chinese hamster ovary cell linesBRAR, B; SANDERSON, T; WANG, N et al.Journal of endocrinology. 1997, Vol 154, Num 3, pp 431-440, issn 0022-0795Article

Zero-field spin-splitting in InAs/AlSb quantum wellsGAUER, C; HARTUNG, M; WIXFORTH, A et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 472-475, issn 0039-6028Conference Paper

Growth of InAs-AlSb quantum wells having both high mobilities and high concentrationsNGUYEN, C; BRAR, B; BOLOGNESI, C. R et al.Journal of electronic materials. 1993, Vol 22, Num 2, pp 255-258, issn 0361-5235Article

Surface-layer modulation of electron concentrations in InAs-AlSb quantum wellsCHANH NGUYEN; BRAR, B; KROEMER, H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 4, pp 1706-1709, issn 1071-1023Conference Paper

Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wellsGUYEN, C; BRAR, B; KROEMER, H et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1854-1856, issn 0003-6951Article

Phosphate uptake by wheat in relation to its labile form in some benchmark soils of PunjabBRAR, B. S; VIG, A. C; MILAP CHAND et al.Journal of the Indian Society of Soil Science. 1986, Vol 34, Num 1, pp 76-81, issn 0019-638XArticle