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NEGATIVE RESISTANCE IN ZENER DIODESBISWAS JC; MITRA V.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1053-1055; BIBL. 8 REF.Article

LOW BREAKDOWN VOLTAGE SCHOTTKY DIODE AS VOLTAGE REGULATORPOPOVIC RS; MLADENOVIC DA.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 214-215; BIBL. 5 REF.Article

SEMIAUTOMATIC MEASUREMENTS OF THIN-FILM BREAKDOWN VOLTAGESGAEBLER W; CONRAD R; BRAEUNIG D et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 10; PP. 1218-1222; BIBL. 5 REF.Article

Stabilisation of some characteristics of gas-filled diodes by electrical breakdownsBOSAN, D. A; SIMONOVIC, D.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 1, pp L1-L4, issn 0022-3727Article

An analytic model for breakdown voltage of gated diodesHAN, S. K; CHOI, Y. I; CHUNG, S. K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 525-527, issn 0959-8324, 3 p.Conference Paper

A RAPID DESTRUCTION-FREE DETERMINATION OF BREAKDOWN VOLTAGE OF THIN INSULATING LAYERSFAHRNER WR; BRAEUNIG D; FERRETTI R et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 533-541; ABS. GER; BIBL. 11 REF.Article

IMPROVEMENT IN GATE BREAKDOWN VOLTAGE FOR SOS DEVICESSHUTO K; KATO K; HASEGAWA M et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 242-245; BIBL. 6 REF.Article

THE ANORMALOUS AVALANCHE BREAKDOWNALBRECHT H; MUELLER R.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 970-977; BIBL. 25 REF.Article

A 600-VOLT MOSFET DESIGNED FOR LOW ON-RESISTANCETEMPLE VAK; LOVE RP; GRAY PV et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 343-349; BIBL. 7 REF.Article

ELECTRON BOMBARDMENT EFFECT ON THE BREAKDOWN VOLTAGE OF ZENER DIODESTOMIMASU T.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 65-67; BIBL. 3 REF.Article

STATISTICS AND GRAIN SIZE IN ZINC OXIDE VARISTORSEMTAGE PR.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6833-6837; BIBL. 6 REF.Article

BREAKING TENSIONS OF DILUTE POLYACRYLAMIDE SOLUTIONSSEDGEWICK SA; TREVENA DH.1978; J. PHYS. D; GBR; DA. 1978; VOL. 11; NO 18; PP. 2517-2526; BIBL. 18 REF.Article

EFFETS DE POLARISATION LORS DU CLAQUAGE IMPULSIONNEL D'UN AEROSOLKIM SV; KLIMCHUK AE; LEKHT YU I et al.1977; ELEKTRON. OBRABOT. MATER., MOLDAV. S.S.R.; S.S.S.R.; DA. 1977; NO 1; PP. 31-34; H.T. 4; BIBL. 12 REF.Article

BREAKDOWN VOLTAGE REDUCTION OF HIGH VOLTAGE PIN DIODES BY A PROCESS INDUCED LINEAR DEFECTKORDE RS; TYAGI MS.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K89-K91; BIBL. 8 REF.Article

VOLTAGE-BREAKDOWN TESTING OF POWER TRANSISTORSCHINERY BJJ; BUCKLEY R.1980; NEW ELECTRON.; ISSN 0047-9624; GBR; DA. 1980; VOL. 13; NO 22; PP. 55-69; 5 P.Article

BREAKDOWN WALKOUT IN PLANAR P-N JUNCTIONSSARASWAT KC; MEINDL JD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 813-819; BIBL. 10 REF.Article

INFLUENCE D'UNE IRRADIATION ELECTRONIQUE A DIVERSES TEMPERATURES SUR LA TENSION DE DISRUPTION EN AVALANCHE DES STRUCTURES P-N DE SILICIUMKORSHUNOV FP; MARCHENKO IG.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 751-753; BIBL. 5 REF.Article

ORIENTATION DEPENDENCE OF BREAKDOWN VOLTAGE IN GAASLEE MH; SZE SM.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1007-1009; BIBL. 5 REF.Article

AN INVESTIGATION OF THE VOLTAGE SUSTAINED BY EPITAXIAL BIPOLAR TRANSISTORS IN CURRENT MODE SECOND BREAKDOWNDUNN I; NUTTALL KI.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 353-372; BIBL. 14 REF.Article

BREAKDOWN IN CERAMIC CAPACITORS UNDER PULSED HIGH-VOLTAGE STRESSDOMINGOS H; QUATTRO DP; SCATURRO J et al.1978; I.E.E.E. TRANS. COMPON. HYBR. MANUFQ TECHNOL.; USA; DA. 1978; VOL. 1; NO 4; PP. 423-428; BIBL. 14 REF.Article

DURCHSCHLAGSPANNUNG INHOMOGENER FUNKENSTRECKEN MIT VERSCHMUTZTEN BARRIEREN. = LA TENSION DISRUPTIVE DES ECLATEURS NON HOMOGENES EN CAS DE CONTAMINATION DES BARRIERESAWAD M; BOHME H.1977; ELEKTRIE; DTSCH.; DA. 1977; VOL. 31; NO 1; PP. 35-38; ABS. RUSSE ANGL.; BIBL. 8 REF.Article

THE THEORY AND APPLICATION OF A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR P-N JUNCTIONS.TEMPLE VAK; ADLER MS.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 950-955; BIBL. 7 REF.Article

Breakdown voltage and on-resistance of multi-RESURF LDMOSCHOI, E. K; CHOI, Y. I; CHUNG, S. K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 683-686, issn 0959-8324, 4 p.Conference Paper

Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article