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Results 1 to 25 of 1994

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BREAKDOWN VOLTAGE MODELING IN MESA POWER DEVICESGOURRET JP; PAILLE J.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 207-217; ABS. GER; BIBL. 11 REF.Article

NEGATIVE RESISTANCE IN ZENER DIODESBISWAS JC; MITRA V.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1053-1055; BIBL. 8 REF.Article

A NEW BIPOLAR TRANSISTOR-GATKONDO H; YUKIMOTO Y.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 373-379; BIBL. 13 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGESANANTHARAM V; BHAT KN.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 939-945; BIBL. 14 REF.Article

MODIFIED PNP TRANSISTORS FOR HIGH VOLTAGE INTEGRATED CIRCUITSVILLA FF.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 5; PP. 35-42; BIBL. 6 REF.Article

REVERSIBLE BREAKDOWN VOLTAGE COLLAPSE IN SILICON GATE-CONTROLLED DIODESRUSU A; PIETRAREANU O; BULUCEA C et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 473-480; BIBL. 10 REF.Article

LOW BREAKDOWN VOLTAGE SCHOTTKY DIODE AS VOLTAGE REGULATORPOPOVIC RS; MLADENOVIC DA.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 214-215; BIBL. 5 REF.Article

SEMIAUTOMATIC MEASUREMENTS OF THIN-FILM BREAKDOWN VOLTAGESGAEBLER W; CONRAD R; BRAEUNIG D et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 10; PP. 1218-1222; BIBL. 5 REF.Article

Stabilisation of some characteristics of gas-filled diodes by electrical breakdownsBOSAN, D. A; SIMONOVIC, D.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 1, pp L1-L4, issn 0022-3727Article

An analytic model for breakdown voltage of gated diodesHAN, S. K; CHOI, Y. I; CHUNG, S. K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 525-527, issn 0959-8324, 3 p.Conference Paper

A RAPID DESTRUCTION-FREE DETERMINATION OF BREAKDOWN VOLTAGE OF THIN INSULATING LAYERSFAHRNER WR; BRAEUNIG D; FERRETTI R et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 533-541; ABS. GER; BIBL. 11 REF.Article

IMPROVEMENT IN GATE BREAKDOWN VOLTAGE FOR SOS DEVICESSHUTO K; KATO K; HASEGAWA M et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 242-245; BIBL. 6 REF.Article

THE ANORMALOUS AVALANCHE BREAKDOWNALBRECHT H; MUELLER R.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 970-977; BIBL. 25 REF.Article

A 600-VOLT MOSFET DESIGNED FOR LOW ON-RESISTANCETEMPLE VAK; LOVE RP; GRAY PV et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 343-349; BIBL. 7 REF.Article

ELECTRON BOMBARDMENT EFFECT ON THE BREAKDOWN VOLTAGE OF ZENER DIODESTOMIMASU T.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 65-67; BIBL. 3 REF.Article

STATISTICS AND GRAIN SIZE IN ZINC OXIDE VARISTORSEMTAGE PR.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6833-6837; BIBL. 6 REF.Article

BREAKING TENSIONS OF DILUTE POLYACRYLAMIDE SOLUTIONSSEDGEWICK SA; TREVENA DH.1978; J. PHYS. D; GBR; DA. 1978; VOL. 11; NO 18; PP. 2517-2526; BIBL. 18 REF.Article

EFFETS DE POLARISATION LORS DU CLAQUAGE IMPULSIONNEL D'UN AEROSOLKIM SV; KLIMCHUK AE; LEKHT YU I et al.1977; ELEKTRON. OBRABOT. MATER., MOLDAV. S.S.R.; S.S.S.R.; DA. 1977; NO 1; PP. 31-34; H.T. 4; BIBL. 12 REF.Article

SAFETY DRAIN VOLTAGE AVOIDING AVALANCHE BREAKDOWN IN MOSFETWU CM; YEH KW.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 9; PP. 245-247; BIBL. 7 REF.Article

EFFET D'UNE TENSION LIMITE POUR LE CLAQUAGE D'UN INTERVALLE DE GAZKOLBYCHEV GV.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 3; PP. 511-512; BIBL. 4 REF.Article

INFLUENCE DU VOLUME ET DE LA CONFIGURATION D'UN INTERVALLE DE VIDE SUR LA TENSION DE CLAQUAGE DU VIDETARATINOVA NV.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 6; PP. 1315-1317; BIBL. 2 REF.Article

FAST NUMERICAL APPROACH TO TWO-DIMENSIONAL COMPUTATIONS OF BREAKDOWN VOLTAGES IN SEMICONDUCTOR DEVICESSILARD A; LUCA M.1979; REV. ROUMAINE SCI. TECH., ELECTROTECH. ENERGET.; ROM; DA. 1979; VOL. 24; NO 3; PP. 505-515; BIBL. 14 REF.Article

STABILITY OF LATERAL PNP TRANSISTORS DURING ACCELERATED AGINGGILLESPIE SJ.1979; I.B.M. J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 6; PP. 689-695; BIBL. 12 REF.Article

INFLUENCE D'UNE IMPURETE FACILEMENT IONISABLE SUR LA TENSION D'AMORCAGE D'UNE DECHARGE VOLUMIQUE DANS LES GAZ MOLECULAIRESKUCHINSKIJ AA; RODICHKIN VA.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 563-565; BIBL. 10 REF.Article

FREQUENCY BREAKDOWN IN SEMICONDUCTORSBISWAS JC; MITRA V.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 22; NO 1; PP. 95-99; BIBL. 22 REF.Article

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