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Results 1 to 25 of 2072

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THREE-ZONE BRIDGMAN-STOCKBARGER CRYSTAL GROWTH FURNACEMIKKELSEN JC JR.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 11; PP. 1564-1566; BIBL. 9 REF.Article

LARGE INSE MONOCRYSTALS GROWN FROM A NON-STOICHIOMETRIC MELT.CHEVY A; KUHN A; MARTIN MS et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 1; PP. 118-122; BIBL. 29 REF.Article

EFFECT OF CONTAINER SHAPE ON THE ORIENTATION OF THE (111) PLANES IN BISMUTHSHAH BS.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 3; PP. K25-K26; BIBL. 10 REF.Article

GROWTH OF PBS SINGLE CRYSTALS FROM NATURAL GALENANISTOR SV; TOACSAN MI.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 9; PP. K100-K102; BIBL. 4 REF.Article

PRODUCTION OF ZINC BICRYSTALS BY MODIFIED BRIDGMAN TECHNIQUE.GOPI MENON; THATTEY AS.1978; CURR. SCI.; INDIA; DA. 1978; VOL. 47; NO 2; PP. 39-41; BIBL. 5 REF.Article

MECHANISM OF FE IMPURITY INCORPORATION INTO SEMI-INSULATING GAAS CRYSTALSUDAGAWA T; TANAKA A; NAKANISI T et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 3; PP. 563-573; BIBL. 10 REF.Article

THERMAL MODELLING OF BRIDGMAN CRYSTAL GROWTHJONES CL; CAPPER P; GOSNEY JJ et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 3; PP. 581-590; BIBL. 8 REF.Article

VACUUM TIGHT QUARTZ AMPOULE FOR BRIDGMAN GROWTH OF CRYSTALS WITH INTERFACE DEMARCATIONCROUCH RK; DEBNAM WJ.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 1; PP. 215-216; BIBL. 1 REF.Article

CONVECTIVE EFFECTS IN CRYSTALS GROWN FROM MELTPIMPUTKAR SM; OSTRACH S.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 3; PP. 614-646; BIBL. 14 REF.Article

ELECTRON TRAP-FREE LOW DISLOCATION MELT-GROWN GAASPARSEY JM JR; NANISHI Y; LAGOWSKI J et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 936-938; BIBL. 3 REF.Article

MACROSEGREGATION. I: UNIFIED ANALYSIS DURING NON-STEADY STATE SOLIDIFICATIONFAVIER JJ.1981; ACTA METALL.; ISSN 0001-6160; USA; DA. 1981; VOL. 29; NO 1; PP. 197-204; ABS. FRE/GER; BIBL. 20 REF.Article

PREFERRED GROWTH OF BISMUTH SINGLE CRYSTALSSHAH BS.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 9; PP. 979-981; ABS. GER; BIBL. 8 REF.Article

CRYSTAL GROWTH AND CHARACTERIZATION OF PDTE2.LYONS A; SCHLEIGH D; WOLD A et al.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 9; PP. 1155-1159; BIBL. 9 REF.Article

DIRECTIONAL SOLIDIFICATION OF ALUMINIUM-SILICON EUTECTIC ALLOY IN A MAGNETIC FIELDAOKI Y; HAYASHI S; KOMATSU H et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 62; NO 1; PP. 207-209; BIBL. 12 REF.Article

DEVIATION OF FREEZING RATE FROM TRANSLATION RATE IN THE BRIDGMAN-STOCKBARGER TECHNIQUE. I: VERY LOW TRANSLATION RATESSUKANEK PC.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 1; PP. 208-218; BIBL. 8 REF.Article

GROWTH OF SINGLE CRYSTALS OF ADAMANTANE C10H16HUSAIN AHM.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 1; PP. 153-155; BIBL. 3 REF.Article

SILICON CONTAMINATION OF INP SYNTHESIZED UNDER HIGH PHOSPHORUS PRESSUREYAMAMOTO A; SHINOYAMA S; UEMURA C et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 585-589; BIBL. 9 REF.Article

GROWTH AND CLEAVAGE OF SE-TE ALLOY CRYSTALSBHATT VP; TRIVEDI SB.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 2; PP. 262-263; BIBL. 7 REF.Article

THE GROWTH OF THIN BISMUTH SINGLE CRYSTALS WITH HIGH RESISTIVITY RATIOS.SIMA V; VASEK P; LEJCEK P et al.1978; KRISTALL U. TECH.; DTSCH.; DA. 1978; VOL. 13; NO 3; PP. K36-K37; BIBL. 4 REF.Article

GROWTH AND CHARACTERIZATION OF AGGASE2 CRYSTALS.AIROLDI G; BEUCHERIE P; RINALDI C et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 38; NO 2; PP. 239-244; BIBL. 11 REF.Article

OBTENTION ET PROPRIETES ELECTRIQUES DE IN6SE7KITSAM S; GAVALESHKO NP.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 11; PP. 2110-2111Article

CRYSTAL GROWTH AND STRUCTURE DETERMINATION OF SILICON TELLURIDE SI2 TE3.PLOOG K; STETTER W; NOWITZKI A et al.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 9; PP. 1147-1153; BIBL. 13 REF.Article

GROWTH OF NICKEL MONOSULFIDE SINGLE CRYSTALS BY THE BRIDGMAN METHOD.FOURCAUDOT G; BRUSETTI R; MERCIER J et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 35; NO 2; PP. 139-144; BIBL. 9 REF.Article

OXYGEN-RELATED GATTERING OF SILICON DURING GROWTH OF BULK GAAS BRIDGMAN CRYSTALSMARTIN GM; JACOB G; HALLAIS JP et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 9; PP. 1841-1856; BIBL. 1 P.Article

AN ANALYTICAL APPROACH TO THERMAL MODELING OF BRIDGMAN-TYPE CRYSTAL GROWTH. I: ONE-DIMENSIONAL ANALYSISNAUMANN RJ.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 3; PP. 554-568; BIBL. 11 REF.Article

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