Application of computer-generated stereolithography and interpositioning template in acetabular fractures: A report of eight casesBROWN, George A; MILNER, Brenton; FIROOZBAKHSH, Keikhosrow et al.Journal of orthopaedic trauma. 2002, Vol 16, Num 5, pp 347-352, issn 0890-5339Article

Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectricSANG HO BAE; SONG, Seung-Chul; CHOI, Kisik et al.Microelectronic engineering. 2006, Vol 83, Num 3, pp 460-462, issn 0167-9317, 3 p.Article

Potential of increased risk of neurovascular injury using proximal interlocking screws of retrograde femoral nails in patients with acetabular fracturesBROWN, George A; FIROOZBAKHSH, Keikhosrow; SUMMA, Christopher D et al.Journal of orthopaedic trauma. 2001, Vol 15, Num 6, pp 433-437, issn 0890-5339Article

ALD of advanced high-k and metal gate stacks for MOS devicesGUTT, James; GOPALAN, Sundar; HUFFMAN, Craig et al.Proceedings - Electrochemical Society. 2005, pp 282-292, issn 0161-6374, isbn 1-56677-463-2, 11 p.Conference Paper

Rapid 3-dimensional prototyping for surgical repair of maxillofacial fractures: A technical noteWAGNER, Jon D; BAACK, Bret; BROWN, George A et al.Journal of oral and maxillofacial surgery. 2004, Vol 62, Num 7, pp 898-901, issn 0278-2391, 4 p.Article

Design and validation of 2 objective structured clinical examination stations to assess core undergraduate examination skills of the hand and kneeRAJ, Nicholas; BADCOCK, Louisa J; BROWN, George A et al.Journal of rheumatology. 2007, Vol 34, Num 2, pp 421-424, issn 0315-162X, 4 p.Article

Charge trapping and device performance degradation in mocvd hafnium-based gate dielectric stack structuresYOUNG, Chadwin D; BERSUKER, Gennadi; BROWN, George A et al.IEEE international reliability physics symposium. 2004, pp 597-598, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Intrinsic mobility evaluation of high-κ gate dielectric transistors using pulsed I_d-V_gYOUNG, Chadwin D; ZEITZOFF, Peter; BROWN, George A et al.IEEE electron device letters. 2005, Vol 26, Num 8, pp 586-589, issn 0741-3106, 4 p.Article

Sub-nanometer high-K gate stack scaling using the HF-LAST/NH₃anneal interfacePETERSON, Jeff J; BARNETT, Joel; LEE, Byoung-Hun et al.Proceedings - Electrochemical Society. 2003, pp 93-99, issn 0161-6374, isbn 1-56677-411-X, 7 p.Conference Paper

Spatial distributions of trapping centers in HfO₂/SiO₂ gate stackHEH, Dawei; YOUNG, Chadwin D; BROWN, George A et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1338-1345, issn 0018-9383, 8 p.Article

Comparison of effective work function extraction methods using capacitance and current measurement techniquesWEN, Huang-Chun; CHOI, Rino; MAJHI, Prashant et al.IEEE electron device letters. 2006, Vol 27, Num 7, pp 598-601, issn 0741-3106, 4 p.Article

Towards 0.5 nm EOT scaling of HfO₂/metal electrode gate stacksPETERSON, Jeff J; BROWN, George A; MAJHI, Prashant et al.Proceedings - Electrochemical Society. 2004, pp 443-451, issn 0161-6374, isbn 1-56677-417-9, 9 p.Conference Paper