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ZUM WIRKUNGSMECHANISMUS DES HEPARINS BEI DER STRAHLENRESISTENZERHOEHUNG VON MAEUSEN. = LE MECANISME D'ACTION DE L'HEPARINE DANS L'AUGMENTATION DE LA RESISTANCE DES SOURIS A L'IRRADIATIONBRUCKNER V.1976; STRAHLENTHERAPIE; DTSCH.; DA. 1976; VOL. 151; NO 4; PP. 347-351; ABS. ANGL. FR.; BIBL. 18 REF.Article

AUFBAU DES DIHYDROSHIKIMISAEURE- UND DES EPIDIHYDROSHIKIMISAEURE-TRIMETHYLAETHERS AUS D-ARABINOSE. EINIGE NEUE UMSETZUNGSPRODUKTE DER D-ARABINOSE. V = SYNTH. DE L'ETHER DE TRIMETHYLE DE L'ACIDE DIHYDRO SHIKIMIQUE ET DE L'ACIDE EPIDIHYDROSHIKIMIQUE A PARTIR DE D-ARABINOSE. QUELQUES NOUVEAUX PRODUITS DE REACTION DU D-ARABINOSE. V.CSASZAR J; BRUCKNER V.1973; ACTA CHIM. ACAD. SCI. HUNGAR.; HONGR.; DA. 1973; VOL. 75; NO 4; PP. 411-417; ABS. RUSSE; BIBL. 7 REF.Serial Issue

UEBER DEN EINFLUSS EINER EIN- UND ZWEIMALIGEN VORBESTRAHLUNG AUF DIE STRAHLENRESISTENZ VON MAEUSEN.BRUCKNER V; NOSTER U.1976; STRAHLENTHERAPIE; DTSCH.; DA. 1976; VOL. 152; NO 2; PP. 178-182; ABS. ANGL. FR.; BIBL. 21 REF.Article

PHOTOELECTRIC OBSERVATIONS AND EXTINCTION OF THE IRREGULAR VARIABLES BH AND BO CEPHEIWENZEL W; BRUCKNER V.1978; MITT. VERAENDERL. STERNE; DDR; DA. 1978; VOL. 8; NO 3; PP. 35-52; BIBL. 6 REF.Serial Issue

UNTERSUCHUNGEN ZUR FESTIGKEIT VON MINERALFASERN. = ETUDE DE LA RESISTANCE MECANIQUE DE FIBRES MINERALESBRUCKNER A; BRUCKNER V.1976; SILIKATTECHNIK; DTSCH.; DA. 1976; VOL. 27; NO 9; PP. 297-299; ABS. RUSSE ANGL. FR.; BIBL. 5 REF.Article

INVESTIGATION OF TEMPORAL AND SPECTRAL PROPERTIES OF ULTRASHORT LIGHT PULSES FROM AN OPTICAL PARAMETRIC AMPLIFIERBERGNER H; BRUCKNER V; SCHRODER B et al.1982; OPTICA ACTA; ISSN 0030-3909; GBR; DA. 1982; VOL. 29; NO 11; PP. 1491-1502; ABS. FRE/GER; BIBL. 22 REF.Article

BEZIEHUNG ZWISCHEN HAUTTEST UND SPEZIFISCHEM IGE (RADIO-ALLERGO-SORBENS-TEST) IN DER DIAGNOSTIK INHALATIVER ALLERGIEN. = RELATION ENTRE LE TEST CUTANE ET L'IGE SPECIFIQUE (RAST) DANS LE DIAGNOSTIC DES ALLERGIES PAR INHALATIONBRUCKNER V; NOSTER U; SCHULZ KH et al.1977; Z. HAUTKRANKH.; DTSCH.; DA. 1977; VOL. 52; NO 4; PP. 109-116; BIBL. 1 P. 1/2Article

AUGER ELECTRON EMISSION FROM SOLID SURFACES UNDER HEAVY-ION BOMBARDMENT = EMISSION ELECTRONIQUE AUGER DE SURFACES SOLIDES SOUS BOMBARDEMENT PAR DES IONS LOURDSSCHMIDT W; MULLER P; BRUCKNER V et al.1981; PHYS. REV. A; ISSN 0556-2791; USA; DA. 1981; VOL. 24; NO 5; PP. 2420-2424; BIBL. 19 REF.Article

Picosecond laser measurements of semiconductor and device propertiesBRÜCKNER, V; ZEHE, A.Experimentelle Technik der Physik. 1995, Vol 41, Num 1, pp 121-138, issn 0014-4924Article

Intracavity generation of sub-nanosecond laser pulses using Q-switching by stimulated Brillouin scattering (SBS)KRAMER, M; BRÜCKNER, V.Experimentelle Technik der Physik. 1994, Vol 40, Num 1, pp 127-132, issn 0014-4924Article

Fast response time measurements in transistors using picosecond optoelectronic switchesBRÜCKNER, V; KERSTAN, F.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp K179-K183, issn 0031-8965Article

Picosecond optoelectronic switching in semiconductors using a partly covered gapBRÜCKNER, V; KERSTAN, F.Electronics Letters. 1984, Vol 20, Num 18, pp 738-740, issn 0013-5194Article

Dependence of the ambipolar diffusion in silicon on the carrier densityBERGNER, H; BRÜCKNER, V.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp K85-K88, issn 0031-8965Article

On the investigation of laser-induced carriers in silicon in the picosecond time rangeBERGNER, H; BRÜCKNER, V.Optical and quantum electronics. 1983, Vol 15, Num 6, pp 477-485, issn 0306-8919Article

Lasergesteuertes schnelles optoelektronisches Schalten in Halbleitern = Commutation optoélectronique rapide, contrôlée par laser, dans des semiconducteurs = Laser controled fast optoelectronic switching in semiconductorsBRÜCKNER, V; KERSTAN, F.Experimentelle Technik der Physik. 1984, Vol 32, Num 2, pp 139-154, issn 0014-4924Article

Interference effects in time-resolved reflectivity measurements in thin semiconductor filmsBERGNER, H; BRÜCKNER, V.Optica acta. 1984, Vol 31, Num 10, pp 1133-1139, issn 0030-3909Article

THE TRIGGERED PSEUDO-SPARK CHAMBER AS A FAST SWITCH AND AS A HIGH-INTENSITY BEAM SOURCEBLOES D; KAMBER I; RIEGE H et al.1983; NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH; ISSN 0167-5087; NLD; DA. 1983; VOL. 205; NO 1-2; PP. 173-184; BIBL. 21 REF.Article

Non-uniform illuminated semiconductor switches : a way to ultrafast optoelectronicsBRÜCKNER, V; GLASBEEK, M; VICKERS, A et al.Experimentelle Technik der Physik. 1994, Vol 40, Num 2, pp 259-270, issn 0014-4924Article

Formation of three-dimensional microelectronic structures by molecular beam eitaxy [epitaxy] combined with Ion Beam proceduresTHOMAS, A; RAMIREZ, A; ZEHE, A et al.Crystal research and technology (1979). 1995, Vol 30, Num 7, pp 971-983, issn 0232-1300Article

Comparative studies of fast recombination processes in amorphous silicon filmsBERGNER, H; BRÜCKNER, V; KERSTAN, F et al.Physica status solidi. B. Basic research. 1983, Vol 117, Num 2, pp 603-610, issn 0370-1972Article

Picosecond recombination of photoexcited carriers in glow discharge a-Si:H films of different deposition temperatureBERGNER, H; BRÜCKNER, V; DIETRICH, D et al.Physica status solidi. B. Basic research. 1983, Vol 120, Num 2, pp 655-658, issn 0370-1972Article

Reflectivity and transmittance investigations of photoexcited charge carriers in silicon in the picosecond time domainBERGNER, H; BRÜCKNER, V; LEINE, L et al.Applied physics. A, Solids and surfaces. 1987, Vol 43, Num 2, pp 97-104, issn 0721-7250Article

Picosecond processes of laser-excited carriers in silicon on sapphireBERGNER, H; BRÜCKNER, V; KERSTAN, F et al.Physica status solidi. B. Basic research. 1985, Vol 128, Num 2, pp 769-777, issn 0370-1972Article

To the mechanism of Q-switching by phase conjugation using stimulated Brillouin scatteringBRÜCKNER, V; HEINEMANN, S; LUDWIG, S et al.Journal of modern optics (Print). 1993, Vol 40, Num 2, pp 187-193, issn 0950-0340Article

Ultrafast processes in silicon studied by transient gratingsBERGNER, H; BRÜCKNER, V; SUPIANEK, M et al.IEEE journal of quantum electronics. 1986, Vol 22, Num 8, pp 1306-1311, issn 0018-9197Article

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