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1/F NOISE IN MODULATION-DOPED FIELD EFFECT TRANSISTORSDUH KH; VAN DER ZIEL A; MORKOC H et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 12-13; BIBL. 4 REF.Article

ORIGIN OF 1/F NOISE IN BIPOLAR TRANSISTORSSTOISIEK M; WOLF D.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1753-1757; BIBL. 7 REF.Article

COMMENT ON 1/F NOISE IN RESISTORS.MUELLER O.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 48-49; BIBL. 5 REF.Article

QUANTUM THEORY OF 1/F NOISE.HANDEL PH.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 53; NO 6; PP. 438-440; BIBL. 4 REF.Article

RELATION ENTRE LE BRUIT D'IMPULSION ET QUELQUES PARAMETRES DES TRANSISTORSZAKLIKIEWICZ A; KOLODZIEJSKI JF.1975; ARCH. ELEKTROTECH.; POLSKA; DA. 1975; VOL. 93; NO 3; PP. 533-545; ABS. RUSSE ANGL.; BIBL. 11 REF.Article

BRUIT BASSE FREQUENCE DANS DES TRANSITIONS MOSKATTO H.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 11; PP. 1164-1167; BIBL. 19 REF.Article

NOUVELLES ETUDES EXPERIMENTALES DU MECANISME DU BRUIT 1/FKOGAN SH M.1977; USP. FIZ. NAUK; S.S.S.R.; DA. 1977; VOL. 123; NO 1; PP. 131-136; BIBL. 14 REF.Article

1/F NOISE AS A NONSTATIONARY PROCESS: EXPERIMENTAL EVIDENCE AND SOME ANALYTICAL CONDITIONS.TANDON JL; BILGER HR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1697-1701; BIBL. 21 REF.Article

ON THE CURRENT DEPENDENCE OF LOW-FREQUENCY NOISE IN BIPOLAR TRANSISTORS.DAS MB.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 12; PP. 1092-1098; BIBL. 16 REF.Article

MESURE DES BRUITS B.F EN UTILISANT UN DETECTEUR LINEAIREGALKIN VN.1974; IZMERITEL. TEKH.; S.S.S.R.; DA. 1974; NO 9; PP. 82; BIBL. 3 REF.Article

EXPERIMENTAL STUDIES ON 1/F NOISEHOOGE FN; KLEINPENNING TGM; VANDAMME LKJ et al.1981; REP. PROG. PHYS.; ISSN 0034-4885; GBR; DA. 1981; VOL. 44; NO 5; PP. 479-532; BIBL. 2 P.Article

OBSERVATIONAL CHARACTERISTICS OF TERRESTRIAL KILOMETRIC RADIATIONKAISER ML; ALEXANDER JK.1978; J. GEOMAGN. GEOELECTR.; JPN; DA. 1978; VOL. 30; NO 3; PP. 289-290; BIBL. 6 REF.Article

CURRENT NOISE IN SURFACE LAYER INTEGRATED RESISTORS.HSIEH KC; CHENETTE ER; VAN DER ZIEL A et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 451-453; BIBL. 1 REF.Article

LOW FREQUENCY NOISE IN THE TRAP FREE INSULATED DIODE WITH THERMAL FREE CARRIERS.SHARMA YK.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1350-1352; BIBL. 6 REF.Article

MESURE DES FLUCTUATIONS DE CONDUCTANCE DES DIODES SEMICONDUCTRICES PRODUITES PAR EFFET FLICKERYAKIMOV AV.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOFIZ.; S.S.S.R.; DA. 1974; VOL. 17; NO 8; PP. 1170-1174; ABS. ANGL.; BIBL. 3 REF.Article

1/F NOISE IN HEMT-TYPE GAAS FETS AT LOW DRAIN BIASVAN DER ZIEL A.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 5; PP. 385-386; BIBL. 2 REF.Article

1/F RESISTOR NOISE. = BRUIT DE RESISTANCES 1/FDEFELICE LJ.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 350-352; BIBL. 7 REF.Article

HARMONIC GENERATION IN 1/F NOISE.JONES BK; FRANCIS JD.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 16; PP. 1937-1940; BIBL. 5 REF.Article

NATURE OF 1/F PHASE NOISE.HANDEL PH.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 24; PP. 1495-1498; BIBL. 4 REF.Article

THE TEMPERATURE DEPENDENCE OF LOW-FREQUENCY NOISE IN AVALANCHE REFERENCE DIODES.KENDALL EJM; TADROS LB.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 1; PP. 291-302; ABS. ALLEM.; BIBL. 17 REF.Article

DISPOSITIF POUR LA MESURE DE LA DISTRIBUTION SPECTRALE DES BRUITS DU TYPE 1/FALPHA DES TRANSISTORS N-P-N ET P-N-P DANS LA GAMME DE FREQUENCE DE 20HZ A 30 KHZFRENKEL L YA.1975; IZMERITEL. TEKH.; S.S.S.R.; DA. 1975; NO 6; PP. 37-39; BIBL. 5 REF.Article

ETUDE DE PHENOMENES STOCHASTIQUES DANS DES DIODES AU GAASSIKULA J.1974; ELEKTROTECH. CAS.; CESKOSL.; DA. 1974; VOL. 25; NO 4-6; PP. 312-318; ABS. RUSSE ALLEM. ANGL.; BIBL. 11 REF.Article

PRESENCE OF MOBILITY-FLUCTUATION 1/F NOISE IDENTIFIED IN SILICON P+NP TRANSISTORSKILMER J; VAN DER ZIEL A; BOSMAN G et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 71-74; BIBL. 10 REF.Article

LOW-FREQUENCY NOISE CHARACTERISTICS OF PB-SALT SEMICONDUCTOR LASERSENG RS; MANTZ AW; TOOO TR et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 7; PP. 1088-1091; BIBL. 6 REF.Article

1/F NOISE.HOOGE FN.1976; PHYS. B+C; PAYS-BAS; DA. 1976; VOL. 83; NO 1; PP. 14-23; BIBL. 1 P. 1/2; (PHYS. ASPECTS NOISE SOLID STATE DEVICE. INT. CONF. 4. PROC.; NOORDWIJKERHOUT; 1975)Conference Paper

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