Dopant segregation in electroepitaxy: variation of effective distribution coefficientBRYSKIEWICZ, T.Journal of applied physics. 1985, Vol 57, Num 8, pp 2783-2787, issn 0021-8979Article

INVESTIGATION OF THE MECHANISM AND KINETICS OF GROWTH OF LPE GAAS.BRYSKIEWICZ T.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 1; PP. 101-114; BIBL. 15 REF.Article

DOPANT INCORPORATION DURING LIQUID PHASE EPITAXYMAZURUK K; BRYSKIEWICZ T.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PART. 1; PP. 1347-1350; BIBL. 10 REF.Article

A METHOD OF DETERMINING THE LIQUID PHASE EPITAXIAL GAAS GROWTH MECHANISM BASED ON GROWTH RATE MEASUREMENTS.BRYSKIEWICZ T; HERMAN MA.1974; KRISTALL. U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 7; PP. 771-778; ABS. ALLEM.; BIBL. 10 REF.Article

A METHOD OF INVESTIGATION OF HETEROSTRUCTURES FOR JUNCTION LASERS BASED ON PHOTOLUMINESCENCE MEASUREMENTS.BRYSKIEWICZ T; HERMAN MA; LEWANDOWSKI W et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 1; PP. 85-90; ABS. ALLEM.; BIBL. 8 REF.Article

ELECTROEPITAXY OF MULTICOMPONENT SYSTEMS: TERNARY AND QUATERNARY COMPOUNDSBRYSKIEWICZ T; LAGOWSKI J; GATOS HC et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 988-996; BIBL. 25 REF.Article

Growth of alloy substrates by liquid phase electroepitaxy; theoretical considerationsBRYSKIEWICZ, T; LAFERRIERE, A.Journal of crystal growth. 1993, Vol 129, Num 3-4, pp 429-442, issn 0022-0248Article

Internal strain and dislocations in In_xGa_1-xAs crystals grown by liquid phase epitaxy/electroepitaxyBRYSKIEWICZ, B; BRYSKIEWICZ, T; JIRAN, E et al.Journal of electronic materials. 1995, Vol 24, Num 3, pp 203-209, issn 0361-5235Article

Properties of very uniform In_xGa_1-xAs single crystals grown by liquid-phase electroepitaxyBRYSKIEWICZ, T; EDELMAN, P; WASILEWSKI, Z et al.Journal of applied physics. 1990, Vol 68, Num 6, pp 3018-3020, issn 0021-8979, 3 p.Article

Bulk GaAs crystal growth by liquid phase electroepitaxyBRYSKIEWICZ, T; BOUCHER, C. F. JR; LAGOWSKI, J et al.Journal of crystal growth. 1987, Vol 82, Num 3, pp 279-288, issn 0022-0248Article

Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxyBOUCHER, C. F. JR; UEDA, O; BRYSKIEWICZ, T et al.Journal of applied physics. 1987, Vol 61, Num 1, pp 359-364, issn 0021-8979Article

Ta₂O₅ antireflection coatings for near-IR GaAs_0•80Sb_0•20 photodiodesRADOJEWSKA, E. B; BRYSKIEWICZ, T; JEDRAL, L. Z et al.Thin solid films. 1986, Vol 139, Num 2, pp 115-119, issn 0040-6090Article

Reflectivity spectra of epitaxial GaAs-rich GaAs_1-xSb_xRADOJEWSKA, E. B; BRYSKIEWICZ, T; JEDRAL, L et al.Applied physics letters. 1984, Vol 45, Num 9, pp 988-989, issn 0003-6951Article

New semi-insulating InP: titanium midgap donorsBRANDT, C. D; HENNEL, A. M; PAWLOWICZ, L. M et al.Applied physics letters. 1986, Vol 48, Num 17, pp 1162-1164, issn 0003-6951Article

Cellular structure in LEC ternary Ga_1-xIn_xAs crystals : American crystal growth 1996REID, D; LENT, B; BRYSKIEWICZ, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 250-255, issn 0022-0248Conference Paper

Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substratesROTH, A. P; WASILEWSKI, Z; SUN, Q et al.Journal of crystal growth. 1991, Vol 113, Num 3-4, pp 379-384, issn 0022-0248Article

Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InPBRANDT, C. D; HENNEL, A. M; BRYSKIEWICZ, T et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3459-3469, issn 0021-8979Article

Absorption spectra of Ti-doped GaAsHENNEL, A. M; BRANDT, C. D; WU, Y.-T et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7353-7356, issn 0163-1829Article