Exact solutions of the axisymmetric equations of motion of a viscous heat-conducting perfect gas described by systems of ordinary differential equationsBUBLIK, V. V.Journal of applied mechanics and technical physics. 1999, Vol 40, Num 5, pp 820-823, issn 0021-8944Article

Analiz istochnikov oshibok dispersionnogo metoda opredeleniya vliyaniya neodnorodnostej atmosfery pri difraktsionnykh stvornykh nablyudeniyakhBUBLIK, V. E.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1984, Num 6, pp 44-48, issn 0536-101XArticle

Group classification of the two-dimensional equations of motion of a viscous heat-conducting perfect gasBUBLIK, V. V.Journal of applied mechanics and technical physics. 1996, Vol 37, Num 2, pp 170-176, issn 0021-8944Article

Regular, partially invariant solutions of RANK 1 and DEFECT 1 of equations of plane motion of a viscous heat-conducting GASBUBLIK, V. V.Journal of applied mechanics and technical physics. 2006, Vol 47, Num 6, pp 790-799, issn 0021-8944, 10 p.Article

Identification des amas d'atomes interstitiels dans les monocristaux d'arséniure de gallium dopé au silicium par diffusion diffuse des rayons XMOROZOV, A. N; BUBLIK, V. T.Fizika tverdogo tela. 1989, Vol 31, Num 6, pp 50-56, issn 0367-3294Article

REALISATION EXPERIMENTALE DU LOGICIEL D'UN SYSTEME DE CALCUL MODERNEGREBNEV VA; KAPITONOVA YU V; LETICHEVSKIJ AA et al.1974; KIBERNETIKA, U.S.S.R.; S.S.S.R.; DA. 1974; NO 6; PP. 7-11; ABS. ANGL.; BIBL. 9 REF.Article

Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors. I: Measurements of the net point defect concentrationMOROZOV, A. N; BUBLIK, V. T.Journal of crystal growth. 1986, Vol 75, Num 3, pp 491-496, issn 0022-0248Article

Diffuse scattering by microdefects in siliconZOTOV, N. M; BUBLIK, V. T.Inorganic materials. 1996, Vol 32, Num 7, pp 692-695, issn 0020-1685Article

K voprosu o provedenii difraktsionnykh stvornykh izmerenij v neodnorodonoj srede s postoyannym gradientom pokazatelya prelomleniyaBUBLIK, V. E; TARASOV, V. V; SHERESHEV, A. B et al.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1986, Num 5, pp 32-38, issn 0536-101XArticle

Clusters of native point defects and high-coercive state in films of Ca,Ge-substituted magnetic garnetBUBLIK, V. T; TKALICH, A. K; SHUPEGIN, M. L et al.Journal of crystal growth. 1994, Vol 140, Num 1-2, pp 84-90, issn 0022-0248Article

Microdefect density determination by X-ray Huang scattering normalized over thermal diffuse scatteringCHARNYI, L. A; SHERBACHEV, K. D; BUBLIK, V. T et al.Physica status solidi. A. Applied research. 1991, Vol 128, Num 2, pp 303-309, issn 0031-8965Article

Effect of In and Sb vacancies on temperature dependence of InSb lattice parameter at high temperaturesMOROZOV, A. N; ABAEVA, T. V; BUBLIK, V. T et al.Crystal research and technology (1979). 1986, Vol 21, Num 5, pp 613-618, issn 0232-1300Article

Native point defects and nonstoichiometry in GaAs(I). Homogeneity region of gallium arsenideMOROZOV, A. N; BUBLIK, V. T; MOROZOVA, O. Y et al.Crystal research and technology (1979). 1986, Vol 21, Num 6, pp 749-754, issn 0232-1300Article

Native point defects and nonstoichiometry in GaAs. II: Mechanism of formation and degradation of semiinsulating properties of undoped gallium arsenide crystalsMOROZOV, A. N; BUBLIK, V. T; MOROZOVA, O. YU et al.Crystal research and technology (1979). 1986, Vol 21, Num 7, pp 859-865, issn 0232-1300Article

Nature et concentration des défauts ponctuels intrinsèques dans les monocristaux de InP non dopés. II. Domaine d'homogénéité du phosphure d'indiumMOROZOV, A. N; BUBLIK, V. T; GRIGOR'EVA, T. P et al.Kristallografiâ. 1984, Vol 29, Num 4, pp 757-763, issn 0023-4761Article

Nature of domain boundary fixing centers in ferrite-garnet films of nonstoichiometric compositionBUBLIK, V. T; TKALICH, A. K; SHUPEGIN, M. L et al.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 444-445, issn 0038-5638Article

Défauts ponctuels intrinsèques des cristaux de silicium sans dislocations fortement dopés par l'arsenicANASTAS'EVA, N. A; BUBLIK, V. T; MOROZOV, A. N et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 3, pp 473-479, issn 0015-3222Article

Etude des possibilités de prise en considération de l'influence de la réfraction sur les résultats des mesures des alignements, faites par des méthodes de diffractionBUBLIK, V. E; GROMOV, E. V; KLYUSHIN, E. B et al.Izvestiâ vysših učebnyh zavedenij. Geodeziâ i aerofotosëmki. 1983, Num 2, pp 13-17, issn 0536-101XArticle

Influence de la structure du germe de cristallisation et des conditions de la croissance cristalline des monocristaux de sulfure de cadmium sur le caractère de la formation et du comportement des sous jointsREBROV, M. YU; TEPLITSKIJ, V. A; BUBLIK, V. T et al.Kristallografiâ. 1989, Vol 34, Num 1, pp 268-270, issn 0023-4761Article

Défauts ponctuels intrinsèques dans les monocristaux de phosphure de galliumMOROZOV, A. N; BUBLIK, V. T; KOVAL'CHUK, I. A et al.Kristallografiâ. 1986, Vol 31, Num 5, pp 986-993, issn 0023-4761Article

Study of microdefects and their distribution in dislocation-free Si-doped HB GaAs by X-ray diffuse scattering on triple-crystal diffractometerCHARNIY, L. A; MOROZOV, A. N; BUBLIK, V. T et al.Journal of crystal growth. 1992, Vol 118, Num 1-2, pp 163-175, issn 0022-0248Article

Calcul du domaine d'homogénéité de l'arséniure d'indium dopé à l'étainMOROZOV, A. N; BUBLIK, V. T; GRIGOR'EVA, T. P et al.Kristallografiâ. 1985, Vol 30, Num 3, pp 548-554, issn 0023-4761Article

Structure of InP single crystals irradiated with reactor neutronsBOIKO, V. M; BUBLIK, V. T; VORONOVA, M. I et al.Physica. B, Condensed matter. 2006, Vol 373, Num 1, pp 82-89, issn 0921-4526, 8 p.Article

Strengthening of multilayer coatings on the base of TiC, TiN and Al2O3 by low doses of γ-quantumBUBLIK, V. T; GOLUBTSOV, I. V; KORSHUNOV, A. B et al.Fizika i himiâ obrabotki materialov. 1999, Num 1, pp 101-102, issn 0015-3214Article

X-ray diffuse scattering identification of matrix As-rich microdefects in GaAs crystalsCHARNIY, L. A; MOROZOW, A. N; SCHERBACHOV, K. D et al.Journal of crystal growth. 1992, Vol 116, Num 3-4, pp 369-377, issn 0022-0248Article