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PREPARATION OF P-TYPE INP FILMS ON INSULTING AND CONDUCTING SUBSTRATES VIA CHEMICAL VAPOR DEPOSITION.BACHMANN KJ; BUEHLER E; SHAY JL et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1509-1513; BIBL. 15 REF.Article

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DEFECTS IN INP HOMOEPITAXIAL LAYERS.MAHAJAN S; BACHMANN KJ; BRASEN D et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 245-248; BIBL. 19 REF.Article

SMALL-AREA, HIGH-RADIANCE C.W. INGAASP L.E.D.S. EMITTING AT 1.2 TO 1.3 UM.DENTAI AG; LEE TP; BURRUS CA et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 484-485; BIBL. 13 REF.Article

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