Mercuric iodide in prospectiveBURGER, Arnold; NASON, Don; FRANKS, Larry et al.Journal of crystal growth. 2013, Vol 379, pp 3-6, issn 0022-0248, 4 p.Article

Compound Semiconductors and Scintillators for Radiation Detection Applications: A Special Tribute to the Research of Michael SchieberBURGER, Arnold; JAMES, Ralph.Journal of crystal growth. 2013, Vol 379, issn 0022-0248, 133 p.Serial Issue

Electrical properties of point defects in cadmium zinc tellurideCAVALLINI, A; FRABONI, B.Journal of crystal growth. 2013, Vol 379, pp 41-45, issn 0022-0248, 5 p.Article

High throughput growth and characterization of thin film materialsMAO, Samuel S.Journal of crystal growth. 2013, Vol 379, pp 123-130, issn 0022-0248, 8 p.Article

Reprint of: State of the art of the heavy metal iodides as photoconductors for digital imagingFORNARO, L.Journal of crystal growth. 2013, Vol 379, pp 115-122, issn 0022-0248, 8 p.Article

Point defects in Cd(Zn)Te and TlBr: TheoryLORDI, Vincenzo.Journal of crystal growth. 2013, Vol 379, pp 84-92, issn 0022-0248, 9 p.Article

Photo-induced current transient spectroscopy and photoluminescence studies of defects in AgGa_0.6In_0.4Se₂YUNLONG CUI; BHATTACHARYA, Pijush; BURGER, Arnold et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 30, issn 0022-3727, 305103.1-305103.7Article

Advances in TlBr detector developmentHITOMI, Keitaro; SHOJI, Tadayoshi; ISHII, Keizo et al.Journal of crystal growth. 2013, Vol 379, pp 93-98, issn 0022-0248, 6 p.Article

Anion vacancies in II―VI chalcogenides: Review and critical analysisBABENTSOV, V; JAMES, R. B.Journal of crystal growth. 2013, Vol 379, pp 21-27, issn 0022-0248, 7 p.Article

Platelet growth of mercuric iodideMCGREGOR, Douglas S; ARIESANTI, Elsa.Journal of crystal growth. 2013, Vol 379, pp 7-15, issn 0022-0248, 9 p.Article

Illumination response of CdZnTeTEAGUE, Lucile C; WASHINGTON, Aaron L; DUFF, Martine C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8142, issn 0277-786X, isbn 978-0-8194-8752-0, 814205.1-814205.7Conference Paper

Barium iodide single-crystal scintillator detectorsCHEREPY, Nerine J; HULL, Giulia; GROZA, Michael et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 670616.1-670616.7, issn 0277-786X, isbn 978-0-8194-6854-3, 1VolConference Paper

Effects of excess tellurium on the properties of CdZnTe radiation detectorsMUREN CHU; TERTERIAN, Sevag; TING, David et al.Journal of electronic materials. 2003, Vol 32, Num 7, pp 778-782, issn 0361-5235, 5 p.Conference Paper

Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectorsYANG, G; BOLOTNIKOV, A. E; ADAMS, A. L et al.Journal of crystal growth. 2013, Vol 379, pp 16-20, issn 0022-0248, 5 p.Article

Raman spectroscopy study of BaI₂:Eu and SrI₂:Eu scintillator crystalsYUNLONG CUI; HAWRAMI, R; TUPITYSN, Eugen et al.Solid state communications. 2011, Vol 151, Num 7, pp 541-544, issn 0038-1098, 4 p.Article

AFM Characterization of Raman Laser-Induced Damage on CdZnTe Crystal SurfacesTEAGUE, Lucile C; HAWKINS, Samantha A; DUFF, Martine C et al.Journal of electronic materials. 2009, Vol 38, Num 8, pp 1522-1527, issn 0361-5235, 6 p.Conference Paper

Synchrotron X-ray based characterization of CdZnTe crystalsDUFF, Martine C; HUNTER, Douglas B; NUESSLE, Patterson et al.Journal of electronic materials. 2007, Vol 36, Num 8, pp 1092-1097, issn 0361-5235, 6 p.Conference Paper

Simulation, modeling, and crystal growth of Cd_0.9Zn_0.1Te for nuclear spectrometersMANDAL, Krishna C; SUNG HOON KANG; HOLCOMB, David E et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1251-1256, issn 0361-5235, 6 p.Conference Paper

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectorsBOLOTNIKOV, A. E; CAMARDA, G. S; CUI, Y et al.Journal of crystal growth. 2013, Vol 379, pp 46-56, issn 0022-0248, 11 p.Article

Bridgman growth of large SrI₂:Eu²⁺ single crystals: A high-performance scintillator for radiation detection applicationsBOATNER, L. A; RAMEY, J. O; TUPITSYN, Eugene et al.Journal of crystal growth. 2013, Vol 379, pp 63-68, issn 0022-0248, 6 p.Article

Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical PowersWASHINGTON, Aaron L; TEAGUE, Lucile C; DUFF, Martine C et al.Journal of electronic materials. 2012, Vol 41, Num 10, pp 2874-2879, issn 0361-5235, 6 p.Conference Paper

The Effect of Various Detector Geometries on the Performance of CZT Using One CrystalWASHINGTON, Aaron L; TEAGUE, Lucile C; DUFF, Martine C et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1744-1748, issn 0361-5235, 5 p.Conference Paper

Raman spectroscopy study of AgGaSe₂, AgGa_0.9In_0.1Se₂, and AgGa_0.8In_0.2Se₂ crystalsYUNLONG CUI; ROY, Utpal N; BHATTACHARYA, Pijush et al.Solid state communications. 2010, Vol 150, Num 35-36, pp 1686-1689, issn 0038-1098, 4 p.Article

Correlations of Bridgman-Grown Cd_0.9Zr_0.1Te Properties with Different Ampoule Rotation SchemesDATTA, Amlan; SWAIN, Santosh; YUNLONG CUI et al.Journal of electronic materials. 2013, Vol 42, Num 11, pp 3041-3053, issn 0361-5235, 13 p.Conference Paper

AFM characterization of laser induced damage on CdZnTe crystal surfacesHAWKINS, Samantha A; TEAGUE, Lucile C; VILLA-ALEMAN, Eliel et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7079, pp 70790R.1-70790R.13, issn 0277-786X, isbn 978-0-8194-7299-1 0-8194-7299-9Conference Paper