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EFFECT OF CAVITY LENGTH ON 1.55 MU M BURIED-HETEROSTRUCTURE DH LASER CHARACTERISTICSTOKUNAGA M; NAKANO Y; TAKAHEI K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 234-236; BIBL. 10 REF.Article

THE CW ELECTRO-OPTICAL PROPERTIES OF (AL, GA) AS MODIFIED-STRIP BARIED-HETEROSTRUCTURE LASERSHARTMAN RL; LOGAN RA; KOSZI LA et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1909-1918; BIBL. 44 REF.Article

BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATESBAR CHAIM N; KATZ J; URY I et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 108-109; BIBL. 8 REF.Article

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NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUECHUNG YIH CHEN; SHYH WANG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 634-636; BIBL. 12 REF.Article

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CHANNELLED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER EMITTING AT 1.55 MUTAKAHASHI S; SAITO H; IWANE G et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 24; PP. 922-923; BIBL. 11 REF.Article

NEW 1.6 MU M WAVELENGTH GAINASP/INP BURIED HETEROSTRUCTURE LASERSARAI S; ASADA M; SUEMATSU Y et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 10; PP. 349-350; BIBL. 10 REF.Article

PICOSECOND PULSE GENERATION BY PASSIVE MODE LOCKING OF DIODE LASERSIPPEN EP; EILENBERGER DJ; DIXON RW et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 3; PP. 267-269; BIBL. 15 REF.Article

THE BURIED OXIDE MOSFET. A NEW TYPE OF HIGH-SPEED SWITCHING DEVICE.SHINCHI O; SAKURAI J.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 10; PP. 1190-1191; BIBL. 3 REF.Article

BURIED LAYER: ITS FORMATION & INTERFERENCE IN DEVICE PROCESSING.KESAVAN R; SINGH MN; ANDHARE PN et al.1975; INDIAN J. TECHNOL.; INDIA; DA. 1975; VOL. 13; NO 12; PP. 548-550; BIBL. 2 REF.Article

LOW-THRESHOLD CURRENT CW OPERATION OF MULTIPLE INFIL BURIED HETEROSTRUCTURE 1.3 MU MGALNASP LASERSPLASTOW R; HARDING M; GRIFFITH I et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 262-263; BIBL. 3 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

MODE LOCKING OF STRIP BURIED HETEROSTRUCTURE (ALGA)AS LASERS USING AN EXTERNAL CAVITYVAN DER ZIEL JP; MIKULYAK RM.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3033-3037; BIBL. 24 REF.Article

ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article

ALGAAS INVERTED STRIP BURIED HETEROSTRUCTURE LASERSBLAUVELT H; MARGALIT S; YARIV A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 485-487; BIBL. 5 REF.Article

1.5 MU M REGION INP/GAINASP BURIED HETEROSTRUCTURE LASERS ON SEMI-INSULATING SUBSTRATESMATSUOKA T; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 1; PP. 12-14; BIBL. 6 REF.Article

BURIED CONVEX WAVEGUIDE STRUCTURE (GAAL) AS INJECTION LASERSSHIMA K; HANAMITSU K; FUJIWARA T et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 605-607; BIBL. 11 REF.Article

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