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MESSUNG DER OBERFLAECHEN DIFFUSION VON SAUERSTOFF AUF W(110) MIT HILFE EINER NEUEN ORTSAUFLOESENDEN KELVIN-METHODE. = MESURE DU COEFFICIENT DE DIFFUSION SUPERFICIELLE DE L'OXYGENE SUR LA FACE 110) DU TUNGSTENE PAR UNE METHODE DE KELVIN A RESOLUTION DE POSITIONBUTZ R.1976; BER. KERNFORSCH.-ANLAGE JUELICH; DTSCH.; DA. 1976; NO 1314; PP. 1-90; BIBL. 4 P.Serial Issue

THE DETERMINATION OF THIN LAYER THICKNESSES WITH AN ELECTRON MICROPROBEBUTZ R; WAGNER H.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 34; NO 3; PP. 693-704; BIBL. 10 REF.Serial Issue

SURFACE DIFFUSION OF PD AND AU ON W SINGLE CRYSTAL PLANES. I: SPREADING BEHAVIOUR OF PD AND AU LAYERSBUTZ R; WAGNER H.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 1; PP. 69-84; BIBL. 15 REF.Article

SURFACE DIFFUSION OF PD AND AU ON W SINGLE CRYSTAL PLANES. II: ANISOTROPY OF PD SURFACE DIFFUSION DUE TO THE INFLUENCE OF SUBSTRATE STRUCTUREBUTZ R; WAGNER H.1979; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1979; VOL. 87; NO 1; PP. 85-100; BIBL. 13 REF.Article

Walser auf der Suche nach... in Erwachsenenbildung in Randgebieten = Education des adultes dans les régions périphériquesBUTZ, R.Education Permanente. 1988, Vol 22, Num 2, pp 68-70Article

UNTERSUCHUNG DER OBERFLAECHENDIFFUSION MIT HILFE EINER ORTSAUFLOESENDEN SCHWINGKONDENSATORMETHODE. = ETUDE DE LA DIFFUSION SUPERFICIELLE A L'AIDE D'UNE METHODE A CONDENSATEUR VIBRANT AVEC RESOLUTION LATERALEBUTZ R; WAGNER H.1977; VAKUUM-TECH.; DTSCH.; DA. 1977; VOL. 26; NO 5; PP. 142-146; ABS. ANGL. FR.; BIBL. 23 REF.Article

DIFFUSION OF OXYGEN ON TUNGSTEN (110).BUTZ R; WAGNER H.1977; SURF. SCI.; NETHERL.; DA. 1977-03; VOL. 63; PP. 448-459; BIBL. 23 REF.; (SOLID-VAC. INTERFACE. INT. SYMP. SURF. PHYS. 4. PROC.; EINDHOVEN; NETH.; 1976)Conference Paper

UEBER DIE AUSBREITUNG VON PD-SCHICHTEN AUF W(110) UND GESTUFTEN W-FLAECHEN DURCH OBERFLAECHENDIFFUSION = ELARGISSEMENT DES COUCHES DE PD SUR W(110) ET SUR LES SURFACES W VICINALES PAR DIFFUSION DE SURFACEBUTZ R; WAGNER H.1978; VAKUUM-TECH.; DEU; DA. 1978; VOL. 27; NO 6; PP. 175-178; ABS. ENG/FRE; BIBL. 8 REF.Article

A DEVICE FOR MEASURING CONTACT POTENTIAL DIFFERENCES WITH HIGH SPATIAL RESOLUTION.BUTZ R; WAGNER H.1977; APPL. PHYS.; GERM.; DA. 1977; VOL. 13; NO 1; PP. 37-42; BIBL. 14 REF.Article

DEPARTURE FROM A STABLE SIH3 ON SI(111)BUTZ R; MEMEO R; WAGNER H et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 4327-4330; BIBL. 17 REF.Article

CALCULATION OF DIPOLE MOMENTS OF EDGE ATOMS ON STEPPED METAL SURFACESKRAHL URBAN B; WAGNER H; BUTZ R et al.1980; SURF. SCI.; NLD; DA. 1980; VOL. 93; NO 2-3; PP. 423-430; BIBL. 19 REF.Article

The surface morphology of Si (100) after carbon depositionBUTZ, R; LÜTH, H.Surface science. 1998, Vol 411, Num 1-2, pp 61-69, issn 0039-6028Article

HYDROGEN VIBRATIONS ON SI(111)WAGNER H; BUTZ R; BACKES U et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 12; PP. 1155-1157; BIBL. 16 REF.Article

SEQUENTIAL WITHDRAWAL OF STIMULANT DRUGS AND USE OF BEHAVIOR THERAPY WITH TWO HYPERACTIVE BOYS.STABLEFORD W; BUTZ R; HASAZI J et al.1976; AMER. J. ORTHOPSYCHIATRY; U.S.A.; DA. 1976; VOL. 46; NO 2; PP. 302-312; BIBL. 14 REF.Article

In situ STM characterisation of epitaxial layers in a 3-inch MBE systemBUTZ, R; WAGNER, H.Journal of electronic materials. 1990, Vol 19, Num 10, pp 1107-1110, issn 0361-5235Article

PREPARATION OF STEPPED TUNGSTEN SINGLE CRYSTAL SURFACES.BUTZ R; KRAHL URBAN B; PREUSS E et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 1; PP. 205-212; ABS. ALLEM.; BIBL. 7 REF.Article

CHARACTERIZATION OF TWO ANTI-HUMAN PARATHYRIN ANTISERAJUEPPNER H; BUTZ R; CASARETTO M et al.1982; J. CLIN. CHEM. CLIN. BIOCHEM.; ISSN 0340-076X; DEU; DA. 1982; VOL. 20; NO 4; PP. 175-180; ABS. GER; BIBL. 18 REF.Article

FEEDBACK AND THERAPIST PRAISE DURING TREATMENT OF PHOBIA = FEEDBACK ET RENFORCEMENT DU THERAPEUTE AU COURS DU TRAITEMENT DE LA PHOBIELEITENBERG H; AGRAS WS; ALLEN R et al.1975; J. CONSULTG CLIN. PSYCHOL.; U.S.A.; DA. 1975; VOL. 43; NO 3; PP. 396-404; BIBL. 17REFArticle

Strain dependent growth of silicon on Ge/Si-C heterostructuresBUTZ, R; LÜTH, H.Journal of crystal growth. 1999, Vol 200, Num 3-4, pp 407-413, issn 0022-0248Article

The structure of clean and SiGe-covered Si(110) surfacesBUTZ, R; LÜTH, H.Surface science. 1996, Vol 365, Num 3, pp 807-816, issn 0039-6028Article

2xn surface structure of SiGe layers deposited on Si(100)BUTZ, R; KAMPERS, S.Applied physics letters. 1992, Vol 61, Num 11, pp 1307-1309, issn 0003-6951Article

Enhanced oxygen adsorption on palladium silicide at room temperatureBUTZ, R; WAGNER, H.Journal of vacuum science and technology. B: microelectronics processing and phenomena. 1983, Vol 1, Num 3, pp 816-818Article

Elfenbeinküste: Perle Schwarzafrikas.. (Côte d'Ivoire: perle de l'Afrique)BUTZ, R; RAUSSER, F.1982, 148 p.Book

Interdiffusion and thermally induced strain relaxation in strained Si1-xGex/Si superlatticesHOLLÄNDER, B; BUTZ, R; MANTL, S et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 6975-6981, issn 0163-1829Article

Ion scattering studies of strained Si/Si1-xGex superlatticesHOLLAÊNDER, B; MANTL, S; STRITZKER, B et al.Superlattices and microstructures. 1991, Vol 9, Num 4, pp 415-420, issn 0749-6036, 6 p.Article

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