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Influence of subthreshold ultrasound treatment on the recombination properties of dislocations in GexSi1-x-Si heterostructuresBUYANOVA, I. A; SAVCHUK, A. U; KITTLER, M et al.Semiconductor science and technology. 1994, Vol 9, Num 11, pp 2042-2046, issn 0268-1242Article

Excitation spectra and polarized luminescence of deep centres in GaAs single crystalsBUYANOVA, I. A; OSTAPENKO, S. S.Physica status solidi. A. Applied research. 1987, Vol 103, Num 2, pp K161-K164, issn 0031-8965Article

Optical and electronic properties of GalnNP alloys : a new material system for lattice matching to GaAsBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 1, pp 101-106, issn 1862-6300, 6 p.Conference Paper

Symétrie et modèle d'un centre complexe de photoluminescence et thermoluminescence polarisées dans des monocristaux de GaPBUYANOVA, I. A; OSTAPENKO, S. S; SHEJNKMAN, M. K et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 10, pp 1791-1800, issn 0015-3222Article

Study of a family of EL2 centers using polarization-luminescence methodsBUYANOVA, I. A; OSTAPENKO, S. S; SHEINKMAN, M. K et al.Optics and spectroscopy. 1991, Vol 70, Num 3, pp 330-334, issn 0030-400XArticle

Symmetry properties of Er3+ related centers in In1-xGaxP with low alloy compositionsBUYANOVA, I. A; NEUHALFEN, A. J; WESSELS, B. W et al.Applied physics letters. 1992, Vol 61, Num 20, pp 2461-2463, issn 0003-6951Article

Symmetry of metastable EL2 luminescence centres in semi-insulating GaAs single crystalsBUYANOVA, I. A; OBORINA, E. I; OSTAPENKO, S. S et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 797-802, issn 0268-1242, 6 p.Article

Role of the host polymer matrix in light emission processes in nano-CdS/poly vinyl alcohol compositeRUDKO, G. Yu; KOVALCHUK, A. O; FEDIV, V. I et al.Thin solid films. 2013, Vol 543, pp 11-15, issn 0040-6090, 5 p.Conference Paper

Ferromagnetism in transition-metal doped ZnOPEARTON, S. J; NORTON, D. P; IVILL, M. P et al.Journal of electronic materials. 2007, Vol 36, Num 4, pp 462-471, issn 0361-5235, 10 p.Article

Unusual effects of hydrogen on electronic and lattice properties of GaNP alloysBUYANOVA, I. A; IZADIFARD, M; HONG, Y. G et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 568-570, issn 0921-4526, 3 p.Conference Paper

Effect of momentum relaxation on exciton spin dynamics in diluted magnetic semiconductor ZnMnSe/CdSe superlatticesBUYANOVA, I. A; RUDKO, G. Yu; CHEN, W. M et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 16, pp 165203.1-165203.11, issn 1098-0121Article

Effects of rapid thermal annealing on optical properties of GaNxP1-x alloys grown by solid source molecular beam epitaxyIZADIFARD, M; BUYANOVA, I. A; BERGMAN, J. P et al.Semiconductor science and technology. 2005, Vol 20, Num 5, pp 353-356, issn 0268-1242, 4 p.Article

Transient spectroscopy of optical spin injection in ZnMnSe/ZnCdSe quantum structuresBUYANOVA, I. A; CHEN, W. M; KAYANUMA, K et al.Journal of superconductivity. 2005, Vol 18, Num 3, pp 371-373, issn 0896-1107, 3 p.Conference Paper

Defects in dilute nitridesBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 31, pp 3027-3035, issn 0953-8984, 9 p.Article

Excitation mechanism of porous silicon luminescence : the role of sensitizersBUYANOVA, I. A; KORSUNSKAYA, N. E; SAVCHUK, A. U et al.Thin solid films. 1995, Vol 255, Num 1-2, pp 185-187, issn 0040-6090Conference Paper

Defect properties of ZnO nanowires revealed from an optically detected magnetic resonance studySTEHR, J. E; CHEN, S. L; FILIPPOV, S et al.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 1, issn 0957-4484, 015701.1-015701.5Article

Electron spin control in dilute nitride semiconductors : The physics of III-V nitridesZHAO, F; BALOCCHI, A; TRUONG, G et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 17, issn 0953-8984, 174211.1-174211.5Article

Transient photoluminescence spectroscopy of spin injection dynamics in double quantum wells of diluted magnetic semiconductorsKAYANUMA, K; SEO, K; NISHIBAYASHI, K et al.Journal of luminescence. 2006, Vol 119-20, pp 418-422, issn 0022-2313, 5 p.Conference Paper

InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applicationsTOROPOV, A. A; TERENT'EV, Ya. V; BUYANOVA, I. A et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 704-707, issn 0370-1972, 4 p.Conference Paper

Optical properties of GaNAs/GaAs structuresBUYANOVA, I. A; CHEN, W. M; POZINA, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 143-147, issn 0921-5107Article

Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaNBUYANOVA, I. A; BERGMAN, J. P; KORONA, K. P et al.Solid state communications. 1998, Vol 105, Num 8, pp 497-501, issn 0038-1098Article

Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxyNI, W.-X; JOELSSON, K. B; DU, C.-X et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 223-227, issn 0040-6090Conference Paper

Cathodoluminescence characterization of ZnO tetrapod structuresLEE, S.-K; CHEN, W. M; HONGXING, D et al.Thin solid films. 2013, Vol 543, pp 114-117, issn 0040-6090, 4 p.Conference Paper

Oxygen and zinc vacancies in as-grown ZnO single crystalsWANG, X. J; VLASENKO, L. S; PEARTON, S. J et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 17, issn 0022-3727, 175411.1-175411.8Article

Properties of Ga-interstitial defects in AlxGa1-xNyP1-yTHINH, N. Q; VERONA, I. P; FURUKAWA, Y et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 12, pp 125209.1-125209.9, issn 1098-0121Article

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