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Temperature and drain voltage dependence of gate-induced drain leakageLOPEZ, L; MASSON, P; NEE, D et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 101-105, issn 0167-9317, 5 p.Conference Paper

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Experimental Investigation of the Tunneling Injection Boosters for Enhanced I_ON ETSOI Tunnel FETVILLALON, Anthony; LE ROYER, Cyrille; CASSE, Mikaël et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 12, pp 4079-4084, issn 0018-9383, 6 p.Article

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Investigation of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, Ravinder; NAIR, Pradeep R et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 1, pp 98-105, issn 0018-9383, 8 p.Article