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Intersubband absorption in Ga_1-xAl_xSb/AlSb superlattices for infrared detectionXIE, H; PIAO, J; KATZ, J et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3152-3156, issn 0021-8979Article

Ionisation des centres d'impureté dans les semiconducteurs à bande étroite par un champ électrique alternatifKRYUCHKOV, S. V; SYRODOEV, G. A.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1695-1697, issn 0015-3222Article

Conduction mechanisms in erbium silicide Schottky diodesUNEWISSE, M. H; STOREY, J. W. V.Journal of applied physics. 1993, Vol 73, Num 8, pp 3873-3879, issn 0021-8979Article

Minority carrier capture cross section of the EL2 defect in GaAsZAIDI, M. A; MAAREF, H; BOURGOIN, J. C et al.Applied physics letters. 1992, Vol 61, Num 20, pp 2452-2454, issn 0003-6951Article

Use of tertiarybutylphosphine for OMVPE growth of (Al_xGa_1-x)_0.51In_0.49PCAO, D. S; STRINGFELLOW, G. B.Journal of electronic materials. 1991, Vol 20, Num 1, pp 97-101, issn 0361-5235Article

Conduction band of Si-Ge_xSi_1-x superlattices using the envelope-function approximationDE STERKE, C. M; HALL, D. G.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1380-1387, issn 0163-1829Article

Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Applied physics letters. 1991, Vol 58, Num 10, pp 1059-1061, issn 0003-6951Article

Threshold of ion-induced kinetic electron emission from a clean metal surfaceLAKITS, G; AUMAYR, F; HEIM, M et al.Physical review. A, Atomic, molecular, and optical physics. 1990, Vol 42, Num 9, pp 5780-5783Article

Intraband absorption for normal illumination in quantum dot intermediate band solar cellsLUQUE, Antonio; MARTI, Antonio; ANTOLIN, Elisa et al.Solar energy materials and solar cells. 2010, Vol 94, Num 12, pp 2032-2035, issn 0927-0248, 4 p.Article

When are thin films of metals metallic?PLUMMER, E. W; DOWBEN, P. A.Progress in surface science. 1993, Vol 42, Num 1-4, pp 201-216, issn 0079-6816Conference Paper

Probing heterojunctions byh ballistic electron emission microscopyFOWELL, A. E; CAFOLLA, A. A; SHEN, T.-H et al.Applied surface science. 1992, Vol 56-58, pp 622-627, issn 0169-4332, bConference Paper

Electrical properties of SiIn_xP_yO_z-InSb metal-insulator-semiconductor structuresHATTORI, K; TORII, Y.Journal of applied physics. 1991, Vol 69, Num 3, pp 1506-1509, issn 0021-8979Article

c-axis oxygen in copper oxide superconductorsMANTHIRAM, A; TANG, X. X; GOODENOUGH, J. B et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 1A, pp 138-149, issn 0163-1829Article

The general relaxation time distribution of a logarithmic capacitance transientROURA, P.Journal of applied physics. 1990, Vol 67, Num 7, pp 3529-3530, issn 0021-8979Article

Etats limites dans des hétérojonction abruptesRAJCHEV, O. EH.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 7, pp 1226-1229, issn 0015-3222Article

Density dependence of the conduction-band energy of excess electrons in liquid argonPLENKIEWICZ, B; PLENKIEWICZ, P; JAY-GERIN, J. P et al.Physical review. A, General physics. 1989, Vol 40, Num 7, pp 4113-4114, issn 0556-2791, 2 p.Article

E₀+#7B-Oe₀ transitions in GaSb/AlSb quantum wellsFORCHEL, A; CEBULLA, U; TRANKLE, G et al.Applied physics letters. 1987, Vol 50, Num 4, pp 182-184, issn 0003-6951Article

Interstitial silver atoms on dislocations in silver bromideGOLDFARB, M. V; LATYSHEV, A. N; MOLOTSKII, M. I et al.Journal of imaging science and technology. 1992, Vol 36, Num 5, pp 457-461Article

Observation of Si-SiO₂ interface states within the conduction band by tunneling current spectroscopySASKASHITA, M; ZAIMA, S; KOIDE, Y et al.Applied surface science. 1992, Vol 56-58, pp 841-845, issn 0169-4332, bConference Paper

Electrical transport properties of the misfit layer compounds (SnS)_1.20TiS₂ and (PbS)_1.18TiS₂WIEGERS, G. A; HAANGE, R. J.European journal of solid state and inorganic chemistry. 1991, Vol 28, Num 5, pp 1071-1078Article

Theory of injected current behavior associated with blocked impurity-band-conductionMARTIN, B. G.Solid-state electronics. 1990, Vol 33, Num 4, pp 427-433, issn 0038-1101, 7 p.Article

Band structure of compensated n-i-p-i superlatticesYAN, H; JIANG, H. X.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6425-6428, issn 0163-1829Article

Electronic structure of GaNP: Insights from optical studiesBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Proceedings - Electrochemical Society. 2003, pp 390-399, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

Photocurrent study on the splitting of the valence band for a CdS single-crystal plateletYEONG JIN SHIN; SEUNG KON KIM; BYEONG HO PARK et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5522-5526, issn 0163-1829Article