On the concept of bond valence sums and its applicability in the analysis of high-T_c superconductorsJANSEN, L; BLOCK, R.Physica. C. Superconductivity. 1991, Vol 181, Num 1-3, pp 149-159, issn 0921-4534Article

Similarity of the electronic properties of the monophosphate tungsten bronzesCANADELL, E; MYUNG-HWAN WHANGBO; IDRIS EL-IDRISSI RACHIDI et al.Inorganic chemistry (Print). 1990, Vol 29, Num 19, pp 3871-3875, issn 0020-1669Article

Electronic structure of C₈₄ and K_XC₈₄: comparison to C₆₀ and graphitePOIRIER, D. M; WEAVER, J. H; KIKUCHI, K et al.Zeitschrift für Physik. D, atoms, molecules and clusters. 1993, Vol 26, Num 1-4, pp 79-83, issn 0178-7683Conference Paper

Valence and conduction band-edges : charge densities in diamondAOURAG, H; MERAD, G; KHELIFA, B et al.Materials chemistry and physics. 1991, Vol 28, Num 4, pp 431-435, issn 0254-0584Article

Valence-band offsets at strained Si/Ge interfacesCOLOMBO, L; RESTA, R; BARONI, S et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5572-5579, issn 0163-1829Article

Experimental self-energy corrections to the Ni valence band = Corrections d'autoénergie expérimentales à la bande de valence de NiSTARNBERG, H. I; NILSSON, P. O.Journal of physics. F. Metal physics. 1988, Vol 18, Num 11, pp L247-L250, issn 0305-4608Article

Ion neutralization at surfaces : a nonperturbative treatmentMILOSEVIC, D. B.Surface science. 1992, Vol 273, Num 1-2, pp 175-190, issn 0039-6028Article

Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Applied physics letters. 1991, Vol 58, Num 10, pp 1059-1061, issn 0003-6951Article

Ab initio (GaAs)₃(AlAs)₃(001) superlattice calculations: band offsets and formation enthalpyBYLANCHER, D. M; KLEINMAN, L.Physical review. B, Condensed matter. 1987, Vol 36, Num 6, pp 3229-3236, issn 0163-1829Article

Minority carrier capture cross section of the EL2 defect in GaAsZAIDI, M. A; MAAREF, H; BOURGOIN, J. C et al.Applied physics letters. 1992, Vol 61, Num 20, pp 2452-2454, issn 0003-6951Article

Electronic structure of holmiumBLYTH, R. I. R; BARRETT, S. D; DHESI, S. S et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 11, pp 5423-5431, issn 0163-1829Article

Ion-ion couplings in FCC metals―a revisitationAMITA SHARMA; RATHORE, R. P. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 12, pp 717-718, issn 0019-5596Article

Axial approximation in the calculation of the valence bands in semiconductor superlatticesMARTIJN DE STERKE, C.Physical review. B, Condensed matter. 1987, Vol 36, Num 12, pp 6574-6580, issn 0163-1829Article

Electronic structure of single crystal C₆₀WU, J; SHEN, Z.-X; WELLS, B. O et al.Physica. C. Superconductivity. 1992, Vol 197, Num 3-4, pp 251-260, issn 0921-4534Article

Photoemission and scanning-tunneling-microscopy study of GaSb(100)FRANKLIN, G. E; RICH, D. H; SAMSAVAR, A et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 18, pp 12619-12627, issn 0163-1829Article

The performance of doping interface dipoles in heterostructuresWILSON, S. P; ALLSOPP, D. W. E.Semiconductor science and technology. 1990, Vol 5, Num 9, pp 952-960, issn 0268-1242Article

Electrical transport analysis of ultra-pure siliconPETERSNO, T. L; SZMULOWICZ, F; FEMENGER, P. M et al.Journal of crystal growth. 1990, Vol 106, Num 1, pp 16-33, issn 0022-0248Conference Paper

Etats limites dans des hétérojonction abruptesRAJCHEV, O. EH.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 7, pp 1226-1229, issn 0015-3222Article

Rôle du gaufrage des surfaces d'égale énergie de la bande de valence dans les transitions optiques «bande-impureté»IPATOVA, I. P; UZUNOVA, YA. T; KHARCHENKO, V. A et al.Fizika tverdogo tela. 1988, Vol 30, Num 2, pp 499-503, issn 0367-3294Article

Electronic structure of a self-interaction-corrected lithium cluster = Structure électronique d'un amas de lithium corrigé de l'autointeractionREDFERN, F. R; CHANEY, R. C.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 3823-3829, issn 0163-1829Article

Valence-band electronic structure of silicon nitride studied with the use of soft-x-ray emissionCARSON, R. D; SCHATTERLY, S. E.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2432-2438, issn 0163-1829Article

Valence band impurity photovoltaic effectSAIDOV, M. S.Applied solar energy. 2002, Vol 38, Num 1, pp 1-4, issn 0003-701X, 4 p.Article

Radiative performance of strained-layer lasersJONES, G; GHITI, A; SILVER, M et al.IEE proceedings. Part J. Optoelectronics. 1993, Vol 140, Num 1, pp 85-90, issn 0267-3932Article

On the role of the heavy and light excitons in decay and scattering by acoustic phononsNGUYEN HONG QUANG.Physica status solidi. B. Basic research. 1991, Vol 163, Num 1, pp K29-K33, issn 0370-1972Article

Effect of collector-base valence-band discontinuity on Kirk effect in double-heterojunction bipolar transistorsMAZHARI, B; MORKOC, H.Applied physics letters. 1991, Vol 59, Num 17, pp 2162-2164, issn 0003-6951Article