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Modeling the non-quasi-static metal-semiconductor space-charge-region capacitanceLIOU, J. J; MALOCHA, D. C.Journal of applied physics. 1989, Vol 65, Num 4, pp 1782-1787, issn 0021-8979, 6 p.Article

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An analytical model for Pinchoff voltage evaluation of ion-implanted GaAs MESFET'sDUTT, M. B; RAM NATH; KUMAR, R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 765-768, issn 0018-9383, 4 p.Article

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Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

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Quantum simulation of nano-scale schottky barrier mosfetsSHIN, Mincheol; JANG, Moongyu; LEE, Seonjae et al.IEEE conference on nanotechnology. 2004, pp 396-398, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Selective photoreceivers based on Schottky diodes with a periodically profiled surfaceBELYAKOV, L. V; GORYAYEV, D. N; RUMYANTSEV, B. L et al.Telecommunications & radio engineering. 1992, Vol 47, Num 10, pp 14-17, issn 0040-2508Article

High temperature Schottky diodes with boron-doped homoepitaxial diamond baseGILDENBLAT, G. S; GROT, S. A; HATFIELD, C. W et al.Materials research bulletin. 1990, Vol 25, Num 1, pp 129-134, issn 0025-5408Article