FREQUENCY DEPENDENCE OF C AND DELTA V/DELTA (C^-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIESZOHTA Y.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1029-1035; BIBL. 17 REF.Serial Issue

TRANSIENT RADIATION EFFECTS IN GAAS IMPATT DIODESGREILING PT; CLARK J.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 753-754; BIBL. 9 REF.Serial Issue

TEMPERATURE DEPENDENCE OF THE SCHOTTKY BARRIER HEIGHT IN GALLIUM ARSENIDEHACKAM R; HARROP P.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 5; PP. 669-672; ABS. RUSSE; BIBL. 14 REF.Serial Issue

Schottky-barrier enhancement limit for GaAs MESFETsKUMAR, Y; TANDON, V. K; SARKAR, S et al.Physica status solidi. A. Applied research. 2000, Vol 177, Num 1, pp 311-316, issn 0031-8965Conference Paper

AUGMENTATION DE LA HAUTEUR DE BARRIERE DE DIODES DE SCHOTTKY AU SILICIUM: APPLICATION AUX CELLULES SOLAIRES.PONPON JP; SIFFERT P.1975; J. PHYS.; FR.; DA. 1975; VOL. 36; NO 5 SUPPL.; PP. 149-151; ABS. ANGL.; BIBL. 9 REF.Article

Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectricDAMNJANOVIC, V; PONOMARENKO, V. P.SPIE proceedings series. 2003, pp 191-199, isbn 0-8194-4986-5, 9 p.Conference Paper

The problem of correlating Schottky-diode barrier height with an ideality factor using I-V measurementsVERRET, D. P.IEEE electron device letters. 1984, Vol 5, Num 5, pp 142-144, issn 0741-3106Article

BEHAVIOR OF AL-SI SCHOTTKY BARRIER DIODES UNDER HEAT TREATMENTCHINO K.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 119-121; H.T. 1; BIBL. 4 REF.Serial Issue

APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

AN ION-IMPLANTED SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORMOLINE RA; GIBSON WC; HECK LD et al.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 317-320; BIBL. 9 REF.Serial Issue

SCHOTTKY BARRIERS ON ZNTEBAKER WD; MILNES AG.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5152-5153; BIBL. 8 REF.Serial Issue

Modélisation des transistors à effet de champ au GaAs avec barrière de Schottky et un canal à dopage ioniqueSTAROSEL'SKIJ, V. I.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1814-1819, issn 0033-8494Article

SHALLOW PTSI-SI SCHOTTKY BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUETSAUR BY; SILVERSMITH DJ; MOUNTAIN RW et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5243-5246; BIBL. 8 REF.Article

DIODES SCHOTTKY DE PUISSANCE: CARACTERISATION DU BRUIT DE FOND DE LA BARRIERE.SAVELLI M; LECOY G; ROLLAND M et al.1975; DGRST-7371358; FR.; DA. 1975; PP. (40P.); BIBL. 1 P.; (RAPP. FINAL, ACTION CONCERTEE: COMITE COMPOSANTS CIRCUITS MICRONIATURISES)Report

Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfacesSCHMID, P. E; HO, P. S; FOLL, H et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4593-4601, issn 0163-1829Article

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

A TaSi_x barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconNEPPL, F; FISCHER, F; SCHWABE, U et al.Thin solid films. 1984, Vol 120, Num 4, pp 257-266, issn 0040-6090Article

Comment on the paper entitled «characterization of the interface states at Al-GaAs Schottky» barriers with a thin interface layerVAN MEIRHAEGHE, R. L; LAFLERE, W. H; MORANTE, J. R et al.Solid-state electronics. 1984, Vol 27, Num 12, issn 0038-1101, 1157Article

On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysGUHA, S; YANG, J; CZUBATYJ, W et al.Applied physics letters. 1983, Vol 42, Num 7, pp 588-589, issn 0003-6951Article

Theory of beam-induced currents in semiconductorsZOOK, J. D.Applied physics letters. 1983, Vol 42, Num 7, pp 602-604, issn 0003-6951Article

Preparation and properties of epitaxial PbSe/BaF₂/PbSe structuresVOGT, W; ZOGG, H; MELCHIOR, H et al.Acta paediatrica scandinavica. 1985, Vol 25, Num 4, pp 611-614, issn 0001-656XArticle

Schottky-barrier diodes of MBE-deposited antimony on n and p gallium arsenideCHENG, H; ZHANG, X.-J; MILNES, A. G et al.Solid-state electronics. 1984, Vol 27, Num 12, pp 1117-1122, issn 0038-1101Article

Dependence of barrier height on energy gap in Au n-type GaAs_1-xP_x Schottky diodesSTIRN, R. J.Applied physics communications. 1981, Vol 1, Num 1, pp 43-53, issn 0277-9374Article

Photoelectric effects in dye-sensitized Langmuir-Blodgett film diodesSAITO, M; SUGI, M; FUKUI, T et al.Thin solid films. 1983, Vol 100, Num 2, pp 117-120, issn 0040-6090Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article