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An advanced PNP bipolar transistor design for low-power and very-high-performance quarter-micron CBiCMOS processDJEZZAR, B; BELAROUSSI, M. T.International conference on microelectronic. 1997, pp 509-512, isbn 0-7803-3664-X, 2VolConference Paper

Integration of power devices in advanced mixed signal analog BiCMOS technologyEFLAND, T. R.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 409-418, issn 0959-8324Article

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOSJUNG, B; HARJANI, R.IEEE International Solid-State Circuits Conference. 2004, pp 178-179, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

New full-voltage-swing BiCMOS buffersEMBABI, S. H. K; BALLAOUAR, A; ELMASRY, M. I et al.IEEE journal of solid-state circuits. 1991, Vol 26, Num 2, pp 150-153, issn 0018-9200, 4 p.Article

A few CMOS transconductors optimized for low power and wide band operationRAUT, Rabin; NING GUO.Circuits, systems, and signal processing. 2001, Vol 20, Num 6, pp 655-675, issn 0278-081XArticle

Copper contamination effect on the reliability of devices in the BiCMOS technologyKIA SENG LOW; SCHWERD, M; KOERNER, H et al.SPIE proceedings series. 1999, pp 24-33, isbn 0-8194-3480-9Conference Paper

Comparison of Gummel-Poon and quasi-saturation models in BiCMOS switchingDAI, Y; YUAN, J. S.International journal of electronics. 1998, Vol 84, Num 4, pp 307-319, issn 0020-7217Article

An integrated linear RF power detectorKULHALLI, Suhas; SETH, Sumantra; FU, Shih-Tsang et al.IEEE International Symposium on Circuits and Systems. 2004, pp 625-628, isbn 0-7803-8251-X, 4 p.Conference Paper

A BiCMOS image sensor circuit for pattern recognition neural networkKUO, J. B; WONG, E. J; CHOU, T. L et al.IEEE transactions on circuits and systems. 1991, Vol 38, Num 12, pp 1554-1556, issn 0098-4094Article

BiCMOS implementation of a fuzzy systemMCDAID, L. J; MCGINNITY, T. M; MAGUIRE, L. P et al.Computers & electrical engineering. 1998, Vol 24, Num 1-2, pp 99-111, issn 0045-7906Article

COM2 Enhanced Graded Base SiGe technology for high speed applicationsIVANOV, T; CARROLL, Michael; ESRY, T et al.Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium. 2002, pp 337-340, issn 1529-2517, isbn 0-7803-7246-8, 4 p.Conference Paper

Suppression of arsenic autodoping with rapid thermal epitaxy for low power bipolar complementary metal oxide semiconductorKING, C. A; JOHNSON, R. W; CHIU, T. Y et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2430-2434, issn 0013-4651Article

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS IntegrationKORICIC, Marko; SULIGOJ, Tomislav; MOCHIZUKI, Hidenori et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3647-3650, issn 0018-9383, 4 p.Article

13 Gsamples/s 5-bit analogue-to-digital converter for coherent optical QPSK receiverADAMCZYK, O; NOE, R.Electronics Letters. 2008, Vol 44, Num 15, pp 895-896, issn 0013-5194, 2 p.Article

High frequency test structures definition for the study of flip-chip process effects on inductor coupling in a bicmos processCLEMENT, C; VAN HAAREN, B; GLORIA, D et al.2004 international conference on microelectronic test structures. 2004, pp 195-199, isbn 0-7803-8262-5, 1Vol, 5 p.Conference Paper

Gate oxide integrity improvement by optimising poly deposition processTZE KIONG NG; YAP, Andrew; KENG FOO LO et al.International Integrated Reliability Workshop. 2004, pp 148-150, isbn 0-7803-8517-9, 1Vol, 3 p.Conference Paper

CONCEPTION ET CARACTERISATION DE MELANGEURS RADIOFREQUENCES EN TECHNOLOGIE BiCMOS POUR APPLICATIONS DE TELEPHONIE CELLULAIRE = DESIGN AND CARACTERISATION OF RADIOFREQUENCY MIXERS IN BiCMOS TECHNOLOGY FOR CELLULAR PHONE APPLICATIONSColomines, Stephane; Plana, Robert.1999, 180 p.Thesis

ETUDE D'UNE INTERFACE RADIO FREQUENCE INTEGREE SUR SILICIUM POUR L'EMISSION ET LA RECEPTION A 2GHz = STUDY ON A RADIO FREQUENCY INTERFACE INTEGRATED ON SILICON FOR 2GHZ SIGNALS TRANSMISSION AND RECEPTIONCartalade, David; Gentil, Pierre.1999, 200 p.Thesis

Integrated Al-plug process for 0.45 μm contact/via at 420°CPARIKH, S.Thin solid films. 1998, Vol 320, Num 1, pp 58-62, issn 0040-6090Conference Paper

A Practical Approach to Enhance Yield of OPTVLD ProductsJUNJI CHENG; XINGBI CHEN.IEEE electron device letters. 2013, Vol 34, Num 2, pp 289-291, issn 0741-3106, 3 p.Article

40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOSKNOCHENHAUER, C; SEDIGHI, B; ELLINGER, F et al.Electronics letters. 2011, Vol 47, Num 10, pp 605-606, issn 0013-5194, 2 p.Article

Integrated frequency synthesiser in SiGe BiCMOS technology for 60 and 24GHz wireless applicationsHERZEL, F; GLISIC, S; WINKLER, W et al.Electronics Letters. 2007, Vol 43, Num 3, pp 154-156, issn 0013-5194, 3 p.Article

2.5Gbit/s fiber receiver with integrated PIN photodiode in low-cost 0.6pm BiCMOSFÖRTSCH, Michael; ZIMMERMANN, Horst.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 596401.1-596401.7, issn 0277-786X, isbn 0-8194-5982-8, 1VolConference Paper

Process integration issues for advanced contact etch of a .25 ųm BiCMOs application in manufacturingTRAN-QUINN, Thuv; BAIOCCO, Robert; HILSCHER, David et al.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 70-74, isbn 0-7803-8312-5, 1Vol, 5 p.Conference Paper

Comprehensive and easy to use SEM analysis structures for BiCMOS process developmentLEIBIGER, Steven.ASMC proceedings. 2002, pp 390-395, issn 1078-8743, isbn 0-7803-7158-5, 6 p.Conference Paper

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