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Results 1 to 25 of 3270

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Structure and properties of TiAlLaN films deposited at various bias voltagesHAO DU; JI XIONG; HAIBO ZHAO et al.Applied surface science. 2014, Vol 292, pp 688-694, issn 0169-4332, 7 p.Article

Stabilized biasing of semiconductor lasersSWARTZ, R. G; WOOLEY, B. A.The Bell System technical journal. 1983, Vol 62, Num 7, pp 1923-1936, issn 0005-8580Article

Influence of deposition parameters on hard Cr-Al-N coatings deposited by multi-arc ion platingLEI WANG; SHIHONG ZHANG; ZHONG CHEN et al.Applied surface science. 2012, Vol 258, Num 8, pp 3629-3636, issn 0169-4332, 8 p.Article

Quantitative TOF-SIMS imaging of DNA microarrays produced by bubble jet printing technique and the role of TOF-SIMS in life science industryHASHIMOTO, Hiroyuki; NAKAMURA, Kumi; TAKASE, Hiromitsu et al.Applied surface science. 2004, Vol 231-32, pp 385-391, issn 0169-4332, 7 p.Conference Paper

Localized Spin-Torque Effect in CPP-GMR Sensor With Current-Screen LayerSATO, Yo; HOSHINO, Katsumi; OKAMURA, Susumu et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1610-1613, issn 0018-9464, 4 p.Conference Paper

On a Model of Nanoparticle Collection by an Electrical ProbeKEIDAR, Michael; BEILIS, Isak I.IEEE transactions on plasma science. 2010, Vol 38, Num 11, pp 3249-3251, issn 0093-3813, 3 p., 2Article

Influence of the frequency of a periodic biasing voltage upon the etching of polymersBOUNASRI, F; MOISAN, M; SAUVE, G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1859-1867, issn 1071-1023Conference Paper

On the performance of a microchannel plate detector used for atom-probe analysisLUNDIN, L; ROLANDER, U.Applied surface science. 1993, Vol 67, Num 1-4, pp 459-466, issn 0169-4332Conference Paper

Comments on «theory and measurement of back bias voltage in IMPATT diodes»TINARI, S. C.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 1, pp 72-74, issn 0018-9480Article

Direct Determination of Gold in Rock Samples Using Collision Cell Quadrupole ICP-MSYIM, Seong A; MAN SIK CHOI; JUNG SUN CHAE et al.Journal of the American Society for Mass Spectrometry. 2012, Vol 23, Num 1, pp 171-178, issn 1044-0305, 8 p.Article

Mixed body-bias techniques with fixed V1 and Idsgeneration circuitsSUMITA, Masaya; SAKIYAMA, Shiro; KINOSHITA, Masayoshi et al.IEEE International Solid-State Circuits Conference. 2004, pp 158-159, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Tunnel Magnetoresistance Effect in CoFeB/MgAlOx/CoFeB Magnetic Tunnel JunctionsHOUFANG LIU; QINLI MA; RIZWAN, Syed et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 2716-2719, issn 0018-9464, 4 p.Conference Paper

Pressure-Controlled Motion of Single Polymers through Solid-State NanoporesBO LU; HOOGERHEIDE, David P; QING ZHAO et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3048-3052, issn 1530-6984, 5 p.Article

Theory and measurement of back bias voltage in IMPATT diodesHOLWAY, L. H. JR; CHU, S. L. G.IEEE transactions on microwave theory and techniques. 1983, Vol 31, Num 11, pp 916-922, issn 0018-9480Article

Andreev-reflected wave packets in voltage-biased superconducting quantum wellsKÜMMEL, R; SENFTINGER, W.Zeitschrift für Physik. B, Condensed matter. 1985, Vol 59, Num 3, pp 275-281, issn 0722-3277Article

The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVAPENG WANG; XIA WANG; YOUMING CHEN et al.Applied surface science. 2007, Vol 253, Num 7, pp 3722-3726, issn 0169-4332, 5 p.Article

Bias effects on the tribological behavior of cathodic arc evaporated CrTiAlN coatings on AISI 304 stainless steelHSU, Cheng-Hsun; CHEN, Kai-Lin; LIN, Zhao-Hong et al.Thin solid films. 2010, Vol 518, Num 14, pp 3825-3829, issn 0040-6090, 5 p.Article

Linear and nonlinear optical properties of graphene nanodisk out of equilibriumGHAFFARIAN, M; EBRAHIMI, F; FEIZABADI, S. Y et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 53, pp 240-250, issn 1386-9477, 11 p.Article

Bias-voltage controlled resistance in a magnetic tunneling junction with an inserted thin metallic layerCHEN, Sui-Pin.Thin solid films. 2013, Vol 537, pp 198-201, issn 0040-6090, 4 p.Article


Bias-field effect on the temperature anomalies of dielectric permittivity in PbMg1/3Nb2/3O3 -PbTiO3 single crystalsRAEVSKI, I. P; PROSANDEEV, S. A; JASTRABIK, L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 18, pp 184104.1-184104.8, issn 1098-0121Article

Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodesGANGULY, Swaroop; REGISTER, L. F; BANERJEE, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 24, pp 245306.1-245306.8, issn 1098-0121Article

Bias dependence of capacitances in modulation-doped FET's at 4 GHzARNOLD, D; KOPP, W; FISCHER, R et al.IEEE electron device letters. 1984, Vol 5, Num 4, pp 123-125, issn 0741-3106Article

Degradation of native oxide passivated silicon photodiodes by repeated oxide biasVERDEBOUT, J; BOOKER, R. L.Journal of applied physics. 1984, Vol 55, Num 2, pp 406-412, issn 0021-8979Article

Emission des porteurs de charge dans un diélectrique lors de leur réchauffement dans un transistor par une polarisation canal-substratKOLOSANOV, V. A; SINITSA, S. P.Mikroèlektronika (Moskva). 1984, Vol 13, Num 2, pp 152-156, issn 0544-1269Article

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