Magnetron reactive ion etching of GaAs in a BCl₃ dischargeMCLANE, G. F; MEYYAPPAN, M; LEE, H. S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 333-336, issn 1071-1023Conference Paper

Spectroscopie du complexe du trifluorure de bore avec l'o-nitro-anilineSUVOROV, B. A.Žurnal fizičeskoj himii. 1986, Vol 60, Num 3, pp 764-766, issn 0044-4537Article

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