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Results 1 to 25 of 1994

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Stabilisation of some characteristics of gas-filled diodes by electrical breakdownsBOSAN, D. A; SIMONOVIC, D.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 1, pp L1-L4, issn 0022-3727Article

An analytic model for breakdown voltage of gated diodesHAN, S. K; CHOI, Y. I; CHUNG, S. K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 525-527, issn 0959-8324, 3 p.Conference Paper

Breakdown voltage and on-resistance of multi-RESURF LDMOSCHOI, E. K; CHOI, Y. I; CHUNG, S. K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 683-686, issn 0959-8324, 4 p.Conference Paper

Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article

1580-V-40-mΩ · cm2 Double-RESURF MOSFETs on 4H-SiC (0001)NOBORIO, Masato; SUDA, Jun; KIMOTO, Tsunenobu et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 831-833, issn 0741-3106, 3 p.Article

Breakdown voltage and on resistance of super-junction power MOSFET: CoolMOS<TM>KONDEKAR, Pravin N; PATIL, Mahesh B; PARIKH, Chetan D et al.SPIE proceedings series. 2002, pp 440-443, isbn 0-8194-4500-2, 2VolConference Paper

Entuurfsvorschlag für einen integrierfähigen Feldeffekttransistor bis 200 V Durchbruchspannung = Conception d'un transistor à effet de champ intégrable à tension de claquage pouvant atteindre 200 V = Design proposal for an integrable field effects transistor up to 200 V breakdown voltageSCHIPANSKI, D; SCHMIDT, J; DJERMANON, I et al.Nachrichtentechnik. Elektronik. 1985, Vol 35, Num 5, pp 184-185, issn 0323-4657Article

Dependence of breakdown voltage on the junction curvature in concentration profiled diodesGHATOL, A. A; SUNDARSINGH, V. P.Microelectronics. 1984, Vol 15, Num 6, pp 5-14, issn 0026-2692Article

Breakdown in concentration profile diodesGHATOL, A. A; SUNDARSINGH, V. P.International journal of electronics. 1983, Vol 55, Num 4, pp 639-646, issn 0020-7217Article

Electrothermal breakdown nodes in silicon bipolar transistorsSTEPOWICZ, W. J.Bulletin de l'Académie polonaise des sciences. Série des sciences techniques. 1982, Vol 30, Num 5-6, pp 93-102, issn 0001-4125Article

Electrical breakdown of solid dielectricsROZHKOV, V. M.Russian electrical engineering. 2000, Vol 71, Num 3, pp 56-60, issn 1068-3712Article

Voltage breakdown and formation film discharge along a surfaces of a water jetAZIZOV, E. A; EMELYANOV, A. I; YAGNOV, V. A et al.International Symposium on Discharges and Electrical Insulation in Vacuum. 2004, isbn 0-7803-8461-X, 2Vol, Vol 1, 130-132Conference Paper

J×B gun pre-ionization equipment in JFT-2 tokamakMATSUZAKI, Y; TANI, T.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp 941-942, issn 0021-4922, 1Article

Designb of high breakdown voltage V-MOSFET applying static shield effectKATOH, K; SHIMADA, Y.Review of the electrical communication laboratories. 1984, Vol 32, Num 6, pp 1107-1114, issn 0029-067XArticle

Stabilisation of some characteristics of gas-filled diodes by electrical breakdownsBOSAN, D. A; SIMONOVIC, D.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 1, pp L1-L4, issn 0022-3727Article

Study of high-voltage breakdown and material consumption in spark-source mass spectrometry and their significance in analytical applicationsVAN PUYMBROECK, J; VERLINDEN, J; SWENTERS, K et al.Talanta (Oxford). 1984, Vol 31, Num 3, pp 177-184, issn 0039-9140Article

Mechanism of electrical breakdown of gases for pressures from 10-9 to 1 bar and inter-electrode gaps from 0.1 to 0.5 mmOSMOKROVIC, P; VUJISIC, M; STANKOVIC, K et al.Plasma sources science & technology (Print). 2007, Vol 16, Num 3, pp 643-655, issn 0963-0252, 13 p.Article

Etude des tensions de claquage et des caractéristiques d'une décharge luminescente dans l'azote avec un additif facilement ionisableBOZHKO, I. V; FAL'KOVSKIJ, N. I.Teplofizika vysokih temperatur. 1985, Vol 23, Num 3, pp 601-603, issn 0040-3644Article

Fluorescent lamp starting voltage relationships at 60 HZ and high frequencyHAMMER, E. E.Journal of the Illuminating Engineering Society. 1983, Vol 13, Num 1, pp 36-46, issn 0099-4480Article

Gamma and UV radiation effects on breakdown voltage of neon-filled tubePEJOVIC, Milic M; PEJOVIC, Momcilo M; RISTIC, Goran S et al.IEEE transactions on plasma science. 2005, Vol 33, Num 3, pp 1047-1052, issn 0093-3813, 6 p.Article

Basic considerations concerning lightning impulse voltage breakdown in vacuumSCHÜMANN, U; KURRAT, M.International Symposium on Discharges and Electrical Insulation in Vacuum. 2004, isbn 0-7803-8461-X, 2Vol, Vol 1, 84-87Conference Paper

Humidity correction effects on ac sparkover voltage characteristics of small air gapsSEBO, S. A; PAWLAK, C. M; OSWIECINSKI, D. S et al.IEE conference publication. 1999, pp 3.325.P3-3.328.P3, issn 0537-9989, isbn 0-85296-719-5Conference Paper

An effect of semiconductor surface shape on gate breakdown voltage of a VMOS transistorSEKIGAWA, T; HAYASI, Y.Solid-state electronics. 1983, Vol 26, Num 9, pp 925-927, issn 0038-1101Article

Abnormal breakdown characteristic in a two-phase mixtureYE QIZHENG; LI JIN; LU FEI et al.Journal of physics. D, Applied physics (Print). 2006, Vol 39, Num 10, pp 2198-2204, issn 0022-3727, 7 p.Article

Breakdown characteristics of RF argon capacitive dischargeSATO, M; SHOJI, M.Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5729-5730, issn 0021-4922, 1Article

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