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Results 1 to 25 of 1856

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The quantum 1/f effect and the general nature of 1/f noiseHANDEL, P. H.AEU. Archiv für Elektronik und Übertragungstechnik. 1989, Vol 43, Num 5, pp 261-270, issn 0001-1096, 10 p.Article

On 1/f noise and detectivity in reverse-biased pn-junction photodiodesKLEINPENNING, T. G. M.Physica, B + C. 1983, Vol 121, Num 1-2, pp 81-88, issn 0378-4363Article

Low-frequency noise controls on-off intermittency of bifurcating systemsAUMAITRE, Sébastien; PETRELIS, Francois; MALLICK, Kirone et al.Physical review letters. 2005, Vol 95, Num 6, pp 064101.1-064101.4, issn 0031-9007Article

Dynamical suppression of 1/f noise processes in qubit systemsFAORO, Lara; VIOLA, Lorenza.Physical review letters. 2004, Vol 92, Num 11, pp 117905.1-117905.4, issn 0031-9007Article

Fluctuation theory of 1/f noise in disordered conductorsBONDAREV, V. N; PIKHITSA, P. V.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 30, pp 6735-6747, issn 0953-8984Article

Bruit de fond, phénomènes de relaxation électrique et fiabilité de composants actifs pour micro-ondes (diodes Schottky, MESFET et HEMT) = Excess noise, anomalous effects an reliability of high frequency devices (Schottky diodes, MESFET and HEMT)Reynoso-Hernandez, J. Apolinar; Graffeuil, Jacques.1989, 210 p.Thesis

Flicker noise in MOSFETs with gate-voltage-dependent mobilityDUH, K. H; VAN DER ZIEL, A.Solid-state electronics. 1984, Vol 27, Num 5, pp 459-461, issn 0038-1101Article

Low-frequency noise in permeable base transistorsZHU, X. C; VAN DER ZIEL, A; BOZLER, C. O et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1408-1413, issn 0018-9383Article

On surface 1/f noise in bipolar transistorsZHUANG YI-QI; SUN QING.Chinese physics. 1988, Vol 8, Num 4, pp 1085-1096, issn 0273-429XArticle

Analyse des bruits électriques et optiques des lasers à semiconducteur pour ll'émission à la longueur d'onde de 0,8 micromètreRaniriharinosy, Karyl; Orsal, Bernard; Alabedra, Robert et al.1988, 175 p.Thesis

Elaboration d'oscillateurs faibles bruits à transistors bipolairesLUCHININ, A. S.Izvestiâ vysših učebnyh zavedenij. Radioelektronika. 1987, Vol 30, Num 3, pp 3-8, issn 0021-3470Article

Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion ― influence of interface statesREIMBOLD, G.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1190-1198, issn 0018-9383Article

A procedure for the assessment of low frequency noise complaintsaMOORHOUSE, Andy T; WADDINGTON, David C; ADAMS, Mags D et al.The Journal of the Acoustical Society of America. 2009, Vol 126, Num 3, pp 1131-1141, issn 0001-4966, 11 p.Article

Fractal dimension of 1/fα noisesVATERKOWSKI, J. L; ROQUES-CARMES, C; GAGNEPAIN, J. J et al.Electronics Letters. 1985, Vol 21, Num 16, pp 688-690, issn 0013-5194Article

1/f noise spectrum on self-similar cascade of bifurcation processesFURUKAWA, H.Physics letters. A. 1985, Vol 110, Num 6, pp 316-318, issn 0375-9601Article

1/f, g-r and burst noise induced by emitter-edge dislocations in bipolar transistorsMIHAILA, M; AMBERIADIS, K; VAN DER ZIEL, A et al.Solid-state electronics. 1984, Vol 27, Num 7, pp 675-676, issn 0038-1101Article

1/f noise in positive temperature coefficient thermistorsRALPH, J. E; SCHOFIELD, J. M. S.Physica, B + C. 1982, Vol 115, Num 1, pp 35-40, issn 0378-4363Article

1/f Noise in Advanced CMOSTransistorsNEMIROVSKY, Yael; CORCOS, Dan; BROUK, Igor et al.IEEE instrumentation & measurement magazine. 2011, Vol 14, Num 1, pp 14-22, issn 1094-6969, 9 p.Article

Correlation between destruction of the metal surface caused by pitting corrosion and intensity of the observed electrochemical noiseSMULKO, J. M; ZIELINSKI, A; DAROWICKI, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 57-62, issn 0277-786X, isbn 0-8194-5841-4, 1Vol, 6 p.Conference Paper

Mobility fluctuation 1/f noise in silicon p+-n-p transistorsKILMER, J; VAN DER ZIEL, A; BOSMAN, G et al.Solid-state electronics. 1985, Vol 28, Num 3, pp 287-288, issn 0038-1101Article

Temperature dependence of the 1/f noise of carbon resistorsFLEETWOOD, D. M; POSTEL, T; GIORDANO, N et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3256-3260, issn 0021-8979Article

Thin film resistor technology and noise reliability indicatorsHRUSKA, P.International conference on microelectronic. 1997, pp 663-666, isbn 0-7803-3664-X, 2VolConference Paper

The response of a superconducting weak-link ring to external adiabatic noisePRANCE, R. J; SPILLER, T. P; PRANCE, H et al.Il Nuovo cimento. B. 1991, Vol 106, Num 4, pp 431-450, issn 0369-3554Article

Caractérisation des cellules solaires au silicium pour application spatialeRuas, Robert; Alabedra, Robert.1988, 144 p.Thesis

1/f noise in n+-p diodesVAN DER ZIEL, A; HANDEL, P. H.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1802-1805, issn 0018-9383Article

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