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Vertical bipolar transistors on buried silicon nitride layersMUNZEL, H; ALBERT, G; STRACK, H et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 283-285, issn 0741-3106Article

Combining non-specular X-ray scattering and X-ray absorption spectroscopy for the investigation of buried layersLÜTZENKIRCHEN-HECHT, Dirk; KEIL, Patrick; FRAHM, Ronald et al.Surface science. 2007, Vol 601, Num 18, pp 4232-4235, issn 0039-6028, 4 p.Conference Paper

FORMATION OF A LONG-WAVELENGTH BURIED-CRESCENT LASER STRUCTURE ON CHANNELLED SUBSTRATESMURRELL DL; WALLING RH; HOBBS RE et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 209-213; BIBL. 15 REF.Article

OUTPUT POWER SATURATION OF BH LASER UNDER HIGH CURRENT OPERATIONNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 501-502; BIBL. 4 REF.Article

A formula for the concentration profile of a buried layer with back diffusionSHIER, J. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 6, pp 1142-1143, issn 0018-9383Article

GAAS-ALXGAL-XAS STRIP BURIED HETEROSTRUCTURE LASERSTSANG WT; LOGAN RA.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 6; PP. 451-469; BIBL. 44 REF.Article

EFFECT OF CAVITY LENGTH ON 1.55 MU M BURIED-HETEROSTRUCTURE DH LASER CHARACTERISTICSTOKUNAGA M; NAKANO Y; TAKAHEI K et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 234-236; BIBL. 10 REF.Article

BURIED HETEROSTRUCTURE LASERS IN THE GAINASP SYSTEM: DESIGNBUUS J.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 10; PP. 1884-1885; BIBL. 4 REF.Article

THE CW ELECTRO-OPTICAL PROPERTIES OF (AL, GA) AS MODIFIED-STRIP BARIED-HETEROSTRUCTURE LASERSHARTMAN RL; LOGAN RA; KOSZI LA et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1909-1918; BIBL. 44 REF.Article

A CLOSELY SPACED (50 MU M) ARRAY OF 16 INDIVIDUALLY ADDRESSABLE BURIED HETEROSTRUCTURE GAAS LASERSVAN DER ZIEL JP; LOGAN RA; MIKULYAK RM et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 9-11; BIBL. 10 REF.Article

NARROW DOUBLE-CURRENT-CONFINEMENT CHANNELED-SUBSTRATE PLANAR LASER FABRICATED BY DOUBLE ETCHING TECHNIQUECHUNG YIH CHEN; SHYH WANG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 634-636; BIBL. 12 REF.Article

BURIED-HETEROSTRUCTURE ALGAAS LASERSSAITO K; ITO R.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 205-215; BIBL. 29 REF.Article

BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATESBAR CHAIM N; KATZ J; URY I et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 108-109; BIBL. 8 REF.Article

Absence of positronium formation in clean buried nanocavities in p-type siliconBRUSA, R. S; MACCHI, C; MARIAZZI, S et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 24, pp 245320.1-245320.5, issn 1098-0121Article

Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substratesBULLE-LIEUWMA, C. W. T; VAN OMMEN, A. H; VANDENHOUDT, D. E. W et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3093-3108, issn 0021-8979Article

Application de l'imagerie microonde active à la détection d'objets enfouis dans un milieu homogène ou stratifiéChommeloux, Luc; Bolomey, Jean-Charles.1987, 305 p.Thesis

Buried ion-exchanged optical waveguides with refractive index profiles controlled by rediffusionBABA, K; SHIRAISHI, K; HANAIZUMI, O et al.Applied physics letters. 1984, Vol 45, Num 8, pp 815-817, issn 0003-6951Article

A shallow buried-layer formation technique utilizing diffusion from implanted polysilicon layerKENNETH, K. O; HAE-SEUNG LEE; REIF, R et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 319-321, issn 0741-3106Article

On the gettering efficiency of buried layers in dielectrically insulated structuresKISSINGER, G; TITTELBACH-HELMRICH, K; KNOPKE, J et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp K141-K143, issn 0031-8965Article

Performance of co-fired buried resistors in A6S tapeMOROZ, Michail.SPIE proceedings series. 2003, pp 161-166, isbn 0-8194-5189-4, 6 p.Conference Paper

Silicon self-interstitial supersaturation during phosphorus diffusionHARRIS, R. M; ANTONIADIS, D. A.Applied physics letters. 1983, Vol 43, Num 10, pp 937-939, issn 0003-6951Article

The punch-through transistor with MOS controled gateWILAMOWSKI, B. M.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 631-637, issn 0031-8965Article

High-power, high-speed 1.3-μ semi-insulating-blocked distributed-feedback lasersKOREN, U; KOCH, T. L; CORVINI, P. J et al.Journal of applied physics. 1988, Vol 64, Num 9, pp 4785-4787, issn 0021-8979Article

GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layersASBECK, P. M; MILLER, D. L; ANDERSON, R. J et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 310-312, issn 0741-3106Article

Influence of temperature-pressure treatment on heavily hydrogenated silicon surfaceCIOSEK, J; RATAJCZAK, J.Applied surface science. 2006, Vol 252, Num 18, pp 6115-6118, issn 0169-4332, 4 p.Conference Paper

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